GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME

Can Bayram

Patent

Atlas literature

Patent

US 9,574,287

GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME

Can Bayram

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

12 independent · 17 dependent

1
Independentgraphene layersemiconductor and carbon containing substratemetal containing monolayer (aluminum, >90%)gallium containing material epitaxial layer
A method of forming a semiconductor material comprising: forming a graphene layer on a semiconductor and carbon containing substrate; depositing a metal containing monolayer on the graphene layer, wherein the metal containing monolayer is thicker than an atomic layer thickness, wherein the metal containing monolayer includes a plurality of adjacent aluminum layers, and wherein the metal containing monolayer is composed of greater than 90 percent aluminum; forming an epitaxial layer of a gallium containing material on the metal containing monolayer; and cleaving a layered stack of the metal containing monolayer and the epitaxial layer of the gallium containing material from the graphene layer that is present on the semiconductor and carbon containing substrate, wherein the cleaving of the layered stack is at an interface between the metal containing monolayer and the graphene layer.
1. 2
  Dependent← claim 1SiC
  The method of Claim 1, wherein the semiconductor and carbon containing substrate is comprised of silicon carbide having a single crystal crystalline structure.
2. 3
  Dependent← claim 1
  The method of Claim 1, wherein the steps of depositing the metal containing monolayer and forming the epitaxial layer of the gallium containing material are conducted in a chemical vapor deposition apparatus.
3. 7
  Dependent← claim 1buffer layer (gallium, aluminum, indium, nitrogen containing)GaN
  The method of Claim 1, wherein forming the epitaxial layer of the gallium containing material on the metal containing monolayer comprises: forming a buﬀer layer comprising at least one of gallium, aluminum, indium, nitrogen and combinations thereof; and forming a gallium nitride layer on the buﬀer layer.
4. 11
  Dependent← claim 1
  The method of Claim 1, wherein the cleaving of the layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material from the graphene layer comprises: applying a transfer substrate to a surface of the epitaxial layer of the gallium containing material that is opposite a surface of the epitaxial layer of the gallium containing material that is in direct contact with the metal containing monolayer; and applying a mechanical force to the transfer substrate in a direction away from an interface between the metal containing monolayer and the graphene layer.
12
Independentgraphene layersemiconductor and carbon containing substratemetal containing monolayer (aluminum, >90%)gallium containing material epitaxial layer
A method for forming at least one semiconductor layer comprising: forming at least one ﬁrst epitaxial layer of at least one ﬁrst gallium containing material on a graphene layer that is present on a semiconductor and carbon containing substrate, wherein the at least one ﬁrst epitaxial layer of at least one ﬁrst gallium containing material includes a metal containing monolayer in direct contact with the graphene layer, wherein the metal containing monolayer is composed of greater than 90 percent aluminum, wherein the metal containing monolayer is thicker than an atomic layer thickness, and wherein the metal containing monolayer includes a plurality of adjacent aluminum layers; Serial No. 14/038,139 5 bonding a transfer substrate to a surface of the at least one ﬁrst epitaxial layer of the at least one ﬁrst gallium containing material that is opposite a surface of the at least one ﬁrst epitaxial layer of the at least one ﬁrst gallium containing material that present on the semiconductor and carbon containing substrate; applying a mechanical force to the transfer substrate in a direction away from the graphene layer to cleave the at least one ﬁrst epitaxial layer of the at least one ﬁrst gallium containing material from a stack of the graphene layer and the semiconductor and carbon containing substrate, wherein the cleaving of the at least one ﬁrst epitaxial layer of the at least one ﬁrst gallium containing material is at an interface between the metal containing monolayer and the graphene layer; removing the transfer substrate from the at least one ﬁrst epitaxial layer of the ﬁrst gallium containing material; bonding a device substrate to the at least one ﬁrst epitaxial layer of the ﬁrst gallium containing material; and forming a second epitaxial layer of a second gallium containing material on the at least one ﬁrst epitaxial layer of the at least one ﬁrst gallium containing material.
1. 13
  Dependent← claim 12
  The method of Claim 12, wherein the second epitaxial layer of the second epitaxial material has a defect density of 2E₉/cm 2 or less.
2. 14
  Dependent← claim 12SiCSi
  The method of Claim 12, wherein the semiconductor and carbon containing substrate comprises silicon carbide or silicon.
3. 15
  Dependent← claim 12GaNInxGa(1-x)NAlxGa(1-x)NAlxGayIn(1-x-y)N
  The method of Claim 12, wherein the at least one ﬁrst epitaxial layer is a multilayered structure including a buﬀer layer composed of at least one of gallium nitride, indium gallium nitride (In X Ga(iu X) N), aluminum gallium nitride (A l X Ga(iu X) N) and aluminum gallium indium nitride (A lx Ga y ln(ui xy) N), and an epitaxial gallium nitride layer, wherein the epitaxial gallium nitride layer provides an upper surface of the at least one ﬁrst epitaxial layer.
4. 16
  Dependent← claim 12Al₂O₃SiSiC
  The method of Claim 12, wherein device substrate is a material selected from the group consisting of sapphire, silicon, silicon carbide and combinations thereof.
5. 17
  Dependent← claim 12GaN
  The method of Claim 12, wherein the second gallium containing material is gallium nitride.
6. 18
  Dependent← claim 12
  The method of Claim 12, wherein the at least one ﬁrst epitaxial layer of at least one ﬁrst gallium containing material is in a strained state on the graphene layer and Serial No. 14/038,139 7 the semiconductor and carbon containing substrate, wherein the at least one ﬁrst epitaxial layer is relaxed after the removing of the transfer substrate.
19
Independent
19-27. canceled
20
Independent
canceled
21
Independent
canceled
22
Independent
canceled
23
Independent
canceled
24
Independent
canceled
25
Independent
canceled
26
Independent
canceled
1. 29
  Dependent← claim 26
  The method of Claim 26, wherein the metal containing monolayer includes a plurality of adjacent metal layers. Serial No. 14/038,139 8
27
Independent
canceled
28
Independentgraphene layersemiconductor and carbon containing substratemetal containing monolayer (aluminum, >90%)gallium containing material epitaxial layer
A method of forming a semiconductor material comprising: forming a graphene layer on a semiconductor and carbon containing substrate; depositing a metal containing monolayer on the graphene layer, wherein the metal containing monolayer is thicker than an atomic layer thickness; forming an epitaxial layer of a gallium containing material on the metal containing monolayer; and cleaving a layered stack of the metal containing monolayer and the epitaxial layer of the gallium containing material from the graphene layer that is present on the semiconductor and carbon containing substrate, wherein the cleaving of the layered stack is at an interface between the metal containing monolayer and the graphene layer.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

PIN light emitting diode (LED) structure

GaNepitaxial semiconductor

buffer layer (gallium, aluminum, indium, nitrogen containing)buffer layer

metal containing monolayer (aluminum, >90%)nucleation interlayer

graphene layerrelease layer

semiconductor and carbon containing substratesubstrate

Materials

Materials described outside the worked examples.

graphene layer

Release Layer Substrate Surface

semiconductor and carbon containing substrate

Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Temperature

800, 1200°C

Duration

10, 20 min

Process details

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Defect Density	≤ 2000000000 cm⁻²	gallium containing material epitaxial layer
Temperature	800–1200 °C

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME | Matter42 Literature