Patent
US 10,374,106INTEGRATED GRAPHENE DETECTORS WITH WAVEGUIDES
Ajey P. JACOB
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,374,106Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a material 18 is selectively deposited on the fin structures 12, i.e., over an entirety of the fin structures including a top surface and sidewalls of …
FIGS. 2A-2C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0010]
FIGS. 3A-3C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0011]
FIGS. 4A and 4B show an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 5 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 6 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 7 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 8 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 9 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 10 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; [[and]] a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of gate contacts provided over the non-planar fin structures and separated from the non-planar sheet of graphene material by insulator material; and source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar fin structures are silicon based waveguide structures. Original
The structure of claim 1, wherein the non-planer sheet of graphene material extends over the insulator material between the plurality of non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on the substrate material of the plurality of non-planar fin structures. Original
(Withdrawn/Currently Amended) The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on [[an]] the insulator material on the plurality of nonplanar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on a material that has a crystalline structure similar to graphene. Withdrawn
The structure of claim 1, wherein the non-planar sheet of graphene material is one to four sheets thick. Original
The structure of claim 1, further comprising contacts in electrical contact with the non-planar sheet of graphene material, above a top surface of the plurality of non-planar fin structures. Original
The structure of claim 1, wherein the insulator material comprises silicon dioxide. Currently amended
1 1.-20.. Canceled
Canceled
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of top contacts in direct electrical contact with the non-planar sheet of graphene material using metal vias; and source and drain sheet of graphene material between the non-planar
The structure of claim 24, further comprising monolithic unpatterned portion of the substrate contacts in electrical contact with the non-planar fin structures. Currently amended a waveguide structure which comprises a material. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
non-planar graphene detector integrated with waveguide fin structures
PIN detector with non-planar graphene and fin structures
Materials described outside the worked examples.
graphene
substrate material (fin structures)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stress-induced bandgap range of non-planar graphene | 1.3–2.75 | non-planar stressed graphene |
Temperature | 900–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,374,106Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a material 18 is selectively deposited on the fin structures 12, i.e., over an entirety of the fin structures including a top surface and sidewalls of …
FIGS. 2A-2C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0010]
FIGS. 3A-3C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0011]
FIGS. 4A and 4B show an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 5 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 6 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 7 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 8 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 9 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 10 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; [[and]] a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of gate contacts provided over the non-planar fin structures and separated from the non-planar sheet of graphene material by insulator material; and source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar fin structures are silicon based waveguide structures. Original
The structure of claim 1, wherein the non-planer sheet of graphene material extends over the insulator material between the plurality of non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on the substrate material of the plurality of non-planar fin structures. Original
(Withdrawn/Currently Amended) The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on [[an]] the insulator material on the plurality of nonplanar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on a material that has a crystalline structure similar to graphene. Withdrawn
The structure of claim 1, wherein the non-planar sheet of graphene material is one to four sheets thick. Original
The structure of claim 1, further comprising contacts in electrical contact with the non-planar sheet of graphene material, above a top surface of the plurality of non-planar fin structures. Original
The structure of claim 1, wherein the insulator material comprises silicon dioxide. Currently amended
1 1.-20.. Canceled
Canceled
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of top contacts in direct electrical contact with the non-planar sheet of graphene material using metal vias; and source and drain sheet of graphene material between the non-planar
The structure of claim 24, further comprising monolithic unpatterned portion of the substrate contacts in electrical contact with the non-planar fin structures. Currently amended a waveguide structure which comprises a material. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
non-planar graphene detector integrated with waveguide fin structures
PIN detector with non-planar graphene and fin structures
Materials described outside the worked examples.
graphene
substrate material (fin structures)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stress-induced bandgap range of non-planar graphene | 1.3–2.75 | non-planar stressed graphene |
Temperature | 900–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,374,106Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a material 18 is selectively deposited on the fin structures 12, i.e., over an entirety of the fin structures including a top surface and sidewalls of …
FIGS. 2A-2C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0010]
FIGS. 3A-3C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0011]
FIGS. 4A and 4B show an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 5 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 6 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 7 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 8 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 9 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 10 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; [[and]] a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of gate contacts provided over the non-planar fin structures and separated from the non-planar sheet of graphene material by insulator material; and source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar fin structures are silicon based waveguide structures. Original
The structure of claim 1, wherein the non-planer sheet of graphene material extends over the insulator material between the plurality of non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on the substrate material of the plurality of non-planar fin structures. Original
(Withdrawn/Currently Amended) The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on [[an]] the insulator material on the plurality of nonplanar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on a material that has a crystalline structure similar to graphene. Withdrawn
The structure of claim 1, wherein the non-planar sheet of graphene material is one to four sheets thick. Original
The structure of claim 1, further comprising contacts in electrical contact with the non-planar sheet of graphene material, above a top surface of the plurality of non-planar fin structures. Original
The structure of claim 1, wherein the insulator material comprises silicon dioxide. Currently amended
1 1.-20.. Canceled
Canceled
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of top contacts in direct electrical contact with the non-planar sheet of graphene material using metal vias; and source and drain sheet of graphene material between the non-planar
The structure of claim 24, further comprising monolithic unpatterned portion of the substrate contacts in electrical contact with the non-planar fin structures. Currently amended a waveguide structure which comprises a material. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
non-planar graphene detector integrated with waveguide fin structures
PIN detector with non-planar graphene and fin structures
Materials described outside the worked examples.
graphene
substrate material (fin structures)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stress-induced bandgap range of non-planar graphene | 1.3–2.75 | non-planar stressed graphene |
Temperature | 900–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,374,106Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a material 18 is selectively deposited on the fin structures 12, i.e., over an entirety of the fin structures including a top surface and sidewalls of …
FIGS. 2A-2C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0010]
FIGS. 3A-3C show respective structures and fabrication processes in accordance with additional aspects of the present disclosure. [0011]
FIGS. 4A and 4B show an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 5 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 6 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 7 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 8 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 9 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
FIG. 10 shows an integrated graphene detector and waveguide structure and respective fabrication processes in accordance with additional aspects of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; [[and]] a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of gate contacts provided over the non-planar fin structures and separated from the non-planar sheet of graphene material by insulator material; and source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar fin structures are silicon based waveguide structures. Original
The structure of claim 1, wherein the non-planer sheet of graphene material extends over the insulator material between the plurality of non-planar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on the substrate material of the plurality of non-planar fin structures. Original
(Withdrawn/Currently Amended) The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on [[an]] the insulator material on the plurality of nonplanar fin structures. Currently amended
The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on a material that has a crystalline structure similar to graphene. Withdrawn
The structure of claim 1, wherein the non-planar sheet of graphene material is one to four sheets thick. Original
The structure of claim 1, further comprising contacts in electrical contact with the non-planar sheet of graphene material, above a top surface of the plurality of non-planar fin structures. Original
The structure of claim 1, wherein the insulator material comprises silicon dioxide. Currently amended
1 1.-20.. Canceled
Canceled
A structure, comprising: a plurality of non-planar fin structures composed of substrate material; a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of top contacts in direct electrical contact with the non-planar sheet of graphene material using metal vias; and source and drain sheet of graphene material between the non-planar
The structure of claim 24, further comprising monolithic unpatterned portion of the substrate contacts in electrical contact with the non-planar fin structures. Currently amended a waveguide structure which comprises a material. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
non-planar graphene detector integrated with waveguide fin structures
PIN detector with non-planar graphene and fin structures
Materials described outside the worked examples.
graphene
substrate material (fin structures)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stress-induced bandgap range of non-planar graphene | 1.3–2.75 | non-planar stressed graphene |
Temperature | 900–1100 °C |
Related documents with shared materials, methods, properties, or citations.
insulator material
silicon
Si
boron nitride
BN
silicon dioxide
SiO₂
silicon carbide
SiC
silicon on insulator (SOI) substrate
buried oxide
SiOx
non-planar stressed graphene
| — |
Thickness | 2–3 µm | — |
insulator material
silicon
Si
boron nitride
BN
silicon dioxide
SiO₂
silicon carbide
SiC
silicon on insulator (SOI) substrate
buried oxide
SiOx
non-planar stressed graphene
| — |
Thickness | 2–3 µm | — |
insulator material
silicon
Si
boron nitride
BN
silicon dioxide
SiO₂
silicon carbide
SiC
silicon on insulator (SOI) substrate
buried oxide
SiOx
non-planar stressed graphene
| — |
Thickness | 2–3 µm | — |
insulator material
silicon
Si
boron nitride
BN
silicon dioxide
SiO₂
silicon carbide
SiC
silicon on insulator (SOI) substrate
buried oxide
SiOx
non-planar stressed graphene
| — |
Thickness | 2–3 µm | — |