Patent
US 10,236,347ELECTRONIC DEVICE WITH A GRAPHENE DEVICE AND SEMICONDUCTOR DEVICE FORMED ON A COMMON SEMICONDUCTOR SUBSTRATE
Aftab Mustansir HUSSAIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,236,347Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional view illustrating an electronic device with a graphene device and a semi c onductor device formed on a common semiconductor substrate ac c ording to an embodiment;
Figure 2 is a flow chart illustrating a method for producing an electronic device with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment;
Figures 3A and 3B are flow charts illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment; and
Figures 4A-4J are cross-sectional views illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing an electronic device, the method comprising: forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; formin g an additional g raphene layer on the g raphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer is an antenna and the forming of the graphene layer comprises forming the graphene layer into an antenna pattern, and wherein prior to forming the graphene precursor on the first portion of the common semiconductor substrate, the method further comprises: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate. Currently amended
The method of claim 1, wherein the graphene precursor is silicon carbide (SiC). Original
The method of claim 1, wherein the forming of the masking layer comprises: growing a silicon dioxide mask on the common semiconductor substrate using thermal oxidation. Previously presented
The method of claim 1, wherein the forming of the graphene layer from the graphene precursor comprises growing graphene on the graphene precursor by annealing the graphene precursor. Original
The method of claim 1, wherein the forming of the semiconductor device comprises: doping the common semiconductor substrate to form a source and drain; and forming a gate on the common semiconductor substrate. Original
The method of claim 1, further comprising: forming antenna contacts on the graphene layer. Previously presented
Canceled
Canceled
Claims 11-18. Canceled
Canceled
A method for producing an electronic device, the method comprising: selectively forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer forms an antenna and the graphene precursor is selectively formed into a pattern of the antenna. Currently amended
Canceled
A method for producing an electronic device, the method comprising: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate; forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene antenna device
semiconductor device (transistor)
graphene-based transistor (graphene FET)
Materials described outside the worked examples.
graphene
C
graphene precursor (silicon carbide)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,236,347Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional view illustrating an electronic device with a graphene device and a semi c onductor device formed on a common semiconductor substrate ac c ording to an embodiment;
Figure 2 is a flow chart illustrating a method for producing an electronic device with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment;
Figures 3A and 3B are flow charts illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment; and
Figures 4A-4J are cross-sectional views illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing an electronic device, the method comprising: forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; formin g an additional g raphene layer on the g raphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer is an antenna and the forming of the graphene layer comprises forming the graphene layer into an antenna pattern, and wherein prior to forming the graphene precursor on the first portion of the common semiconductor substrate, the method further comprises: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate. Currently amended
The method of claim 1, wherein the graphene precursor is silicon carbide (SiC). Original
The method of claim 1, wherein the forming of the masking layer comprises: growing a silicon dioxide mask on the common semiconductor substrate using thermal oxidation. Previously presented
The method of claim 1, wherein the forming of the graphene layer from the graphene precursor comprises growing graphene on the graphene precursor by annealing the graphene precursor. Original
The method of claim 1, wherein the forming of the semiconductor device comprises: doping the common semiconductor substrate to form a source and drain; and forming a gate on the common semiconductor substrate. Original
The method of claim 1, further comprising: forming antenna contacts on the graphene layer. Previously presented
Canceled
Canceled
Claims 11-18. Canceled
Canceled
A method for producing an electronic device, the method comprising: selectively forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer forms an antenna and the graphene precursor is selectively formed into a pattern of the antenna. Currently amended
Canceled
A method for producing an electronic device, the method comprising: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate; forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene antenna device
semiconductor device (transistor)
graphene-based transistor (graphene FET)
Materials described outside the worked examples.
graphene
C
graphene precursor (silicon carbide)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,236,347Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional view illustrating an electronic device with a graphene device and a semi c onductor device formed on a common semiconductor substrate ac c ording to an embodiment;
Figure 2 is a flow chart illustrating a method for producing an electronic device with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment;
Figures 3A and 3B are flow charts illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment; and
Figures 4A-4J are cross-sectional views illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing an electronic device, the method comprising: forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; formin g an additional g raphene layer on the g raphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer is an antenna and the forming of the graphene layer comprises forming the graphene layer into an antenna pattern, and wherein prior to forming the graphene precursor on the first portion of the common semiconductor substrate, the method further comprises: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate. Currently amended
The method of claim 1, wherein the graphene precursor is silicon carbide (SiC). Original
The method of claim 1, wherein the forming of the masking layer comprises: growing a silicon dioxide mask on the common semiconductor substrate using thermal oxidation. Previously presented
The method of claim 1, wherein the forming of the graphene layer from the graphene precursor comprises growing graphene on the graphene precursor by annealing the graphene precursor. Original
The method of claim 1, wherein the forming of the semiconductor device comprises: doping the common semiconductor substrate to form a source and drain; and forming a gate on the common semiconductor substrate. Original
The method of claim 1, further comprising: forming antenna contacts on the graphene layer. Previously presented
Canceled
Canceled
Claims 11-18. Canceled
Canceled
A method for producing an electronic device, the method comprising: selectively forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer forms an antenna and the graphene precursor is selectively formed into a pattern of the antenna. Currently amended
Canceled
A method for producing an electronic device, the method comprising: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate; forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene antenna device
semiconductor device (transistor)
graphene-based transistor (graphene FET)
Materials described outside the worked examples.
graphene
C
graphene precursor (silicon carbide)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,236,347Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional view illustrating an electronic device with a graphene device and a semi c onductor device formed on a common semiconductor substrate ac c ording to an embodiment;
Figure 2 is a flow chart illustrating a method for producing an electronic device with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment;
Figures 3A and 3B are flow charts illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment; and
Figures 4A-4J are cross-sectional views illustrating methods for producing electronic devices with a graphene device and a semiconductor device formed on a common semiconductor substrate according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing an electronic device, the method comprising: forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; formin g an additional g raphene layer on the g raphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer is an antenna and the forming of the graphene layer comprises forming the graphene layer into an antenna pattern, and wherein prior to forming the graphene precursor on the first portion of the common semiconductor substrate, the method further comprises: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate. Currently amended
The method of claim 1, wherein the graphene precursor is silicon carbide (SiC). Original
The method of claim 1, wherein the forming of the masking layer comprises: growing a silicon dioxide mask on the common semiconductor substrate using thermal oxidation. Previously presented
The method of claim 1, wherein the forming of the graphene layer from the graphene precursor comprises growing graphene on the graphene precursor by annealing the graphene precursor. Original
The method of claim 1, wherein the forming of the semiconductor device comprises: doping the common semiconductor substrate to form a source and drain; and forming a gate on the common semiconductor substrate. Original
The method of claim 1, further comprising: forming antenna contacts on the graphene layer. Previously presented
Canceled
Canceled
Claims 11-18. Canceled
Canceled
A method for producing an electronic device, the method comprising: selectively forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate, wherein the graphene layer forms an antenna and the graphene precursor is selectively formed into a pattern of the antenna. Currently amended
Canceled
A method for producing an electronic device, the method comprising: forming a masking layer on the common semiconductor substrate; patterning the masking layer to form an opening in the first portion of the common semiconductor substrate; forming a graphene precursor on a first portion of a common semiconductor substrate; forming a graphene layer on the graphene precursor; forming a semiconductor device on a second portion of the common semiconductor substrate; forming the graphene precursor on a third portion of the common semiconductor substrate; forming an additional graphene layer on the graphene precursor on the third portion of the common semiconductor substrate; forming source and drain contacts on the additional graphene layer; and electrically coupling one of the source and drain contacts to the graphene layer on the first portion of the common semiconductor substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene antenna device
semiconductor device (transistor)
graphene-based transistor (graphene FET)
Materials described outside the worked examples.
graphene
C
graphene precursor (silicon carbide)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
common semiconductor substrate
silicon dioxide masking layer
SiO₂
silicon substrate
Si
cubic silicon carbide (3C-SiC, β-SiC)
3C-SiC
common semiconductor substrate
silicon dioxide masking layer
SiO₂
silicon substrate
Si
cubic silicon carbide (3C-SiC, β-SiC)
3C-SiC
common semiconductor substrate
silicon dioxide masking layer
SiO₂
silicon substrate
Si
cubic silicon carbide (3C-SiC, β-SiC)
3C-SiC
common semiconductor substrate
silicon dioxide masking layer
SiO₂
silicon substrate
Si
cubic silicon carbide (3C-SiC, β-SiC)
3C-SiC