Fabrication of Graphene Electronic Devices Using Step surface Contour

Gunther LIPPERT

Patent

Atlas literature

Patent

US 8,778,782

Fabrication of Graphene Electronic Devices Using Step surface Contour

Gunther LIPPERT, Jaroslaw Dabrowski, Grzegorz Lupina, Olaf Seifarth

2014-07-15·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

7 independent · 13 dependent

1
IndependentCvan der Waals layerelectronic component with graphene layer on van der Waals layer over step-contoured substrate
A method for fabricating an electronic component, comprising:-providing a substrate and a plurality of surface step contours on the substrate; and-depositing a van der Waals layer adjacent to the surface step contours; and-depositing a graphene layer on the van der Waals layer; wherein-growth of the graphene layer is seeded at a kink of the surface step contours.
1. 5
  Dependent← claim 1
  The method according to claim 1, wherein forming the surface step-contours comprises fabricating a line-shaped or mesa-shaped seed layer on the van-der-Waals functional layer.
2. 7
  Dependent← claim 1
  The method according to claim 1, wherein providing the surface step contours comprises a depositing a plurality of seed layers, which are stacked in a vertical direction on the surface and are separated from each other by a respective intermediate dielectric layer.
3. 8
  Dependent← claim 1C
  The method according to claim 1, wherein a forming the surface step contours comprises fabricating the surface step contour to have a step- height that limits a vertical growth of the graphene layer to a monolayer or a bi-layer of graphene.
4. 9
  Dependent← claim 1Si
  The method according to claim 1, wherein the substrate either contains or consists of silicon. withdrawn
5. 10
  Dependent← claim 1C
  1 0. The method according to claim 1, wherein depositing the graphene layer is performed at a substrate temperature higher than 600 0C and lower than 1000 C. withdrawn
6. 11
  Dependent← claim 1C
  The method according to claim 1, wherein depositing the graphene layer comprises depositing atomic Carbon (C). withdrawn
7. 12
  Dependent← claim 1C
  1 2. The method according to claim 1, wherein depositing the graphene layer comprises catalytically separating Carbon atoms (C) from a Carbon-comprising compound. withdrawn
2
Independent
canceled
3
Independent
canceled
4
Independent
canceled
13
IndependentCvan der Waals layerelectronic component with graphene layer on van der Waals layer over step-contoured substrate
An electronic component comprising:-a substrate and a plurality of surface step contours on the substrate;-a van-der-Waals layer deposited adjacent to the step contours; and,-a gra.-gri p layer on the van der Waals layer and seeded at a kink of the step contours.
1. 14
  Dependent← claim 13C
  The electronic component according to claim 13, comprising a plurality of graphene layers, which are arranged in a lateral layer sequence or in a vertical layer stack.
2. 15
  Dependent← claim 13memory cell or transistor
  The electronic component of claim 13, which takes the form of a memory cell or a transistor.
3. 17
  Dependent← claim 13
  The electronic component of claim 13, wherein a line- shaped or mesa-shaped seed layer is arranged between the van-der-Waals layer and the graphene layer.
4. 19
  Dependent← claim 13Si
  The electronic component of claim 13, wherein the substrate either contains or consists of silicon.
5. 20
  Dependent← claim 13BNAl₂O₃
  The electronic component of claim 13, wherein the van- der-Waals functional layer is made from the group formed by boron nitride BN and aluminum oxide A 12O3.
16
Independent
canceled
18
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

electronic component with graphene layer on van der Waals layer over step-contoured substrate

Cchannel

van der Waals layervan der waals functional layer

Sisubstrate

memory cell or transistor

No layer stack recorded.

Materials

Materials described outside the worked examples.

graphene

Claimed Channel Material

van der Waals layer

Claimed Dielectric Or Functional Layer

seed layer material (Si, Ti, Ni, Al, Cu)

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Fabrication of Graphene Electronic Devices Using Step surface Contour | Matter42 Literature