Patent
US 8,890,171METHOD OF FABRICATING SINGLE-LAYER GRAPHENE
Yun-sung WOO
US
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Patent
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Patent
US 8,890,171Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of fabricating a single-layer graphene on an entire surface of a SiC wafer, according to an various embodiments; [0030]
FIGS. 2A through 2D show cross-sectional views illustrating steps of a method of fabricating a single-layer graphene on the entire surface of a SiC wafer, …
FIG. 3 is a cross-sectional view illustrating a fabricated single-layer graphene on the entire surface of a SiC wafer, according to various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer, the method comprising: forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.
The method of claim 1, wherein the buffer layer is a top layer of the SiC wafer.
The method of claim 1, wherein the forming a plurality of graphene layers comprises sublimating silicon of the SiC wafer.
The method of claim 1, wherein the converting the buffer layer to the single-layer graphene comprises thermally treating the SiC wafer in a hydrogen atmosphere or in a lithium gas atmosphere to make a silicon-hydrogen bond or lithium-silicon bond, respectively.
A SiC wafer comprising a single-layer graphene formed on an entire surface of the SiC wafer, the SiC wafer being fabricated by the method of claim 1. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
SiC wafer with single-layer graphene on entire surface
field-effect transistor array
Materials described outside the worked examples.
single-layer graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge mobility of graphene (background reference) | 200000 cm²/(V·s) | C |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,890,171Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of fabricating a single-layer graphene on an entire surface of a SiC wafer, according to an various embodiments; [0030]
FIGS. 2A through 2D show cross-sectional views illustrating steps of a method of fabricating a single-layer graphene on the entire surface of a SiC wafer, …
FIG. 3 is a cross-sectional view illustrating a fabricated single-layer graphene on the entire surface of a SiC wafer, according to various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer, the method comprising: forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.
The method of claim 1, wherein the buffer layer is a top layer of the SiC wafer.
The method of claim 1, wherein the forming a plurality of graphene layers comprises sublimating silicon of the SiC wafer.
The method of claim 1, wherein the converting the buffer layer to the single-layer graphene comprises thermally treating the SiC wafer in a hydrogen atmosphere or in a lithium gas atmosphere to make a silicon-hydrogen bond or lithium-silicon bond, respectively.
A SiC wafer comprising a single-layer graphene formed on an entire surface of the SiC wafer, the SiC wafer being fabricated by the method of claim 1. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
SiC wafer with single-layer graphene on entire surface
field-effect transistor array
Materials described outside the worked examples.
single-layer graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge mobility of graphene (background reference) | 200000 cm²/(V·s) | C |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,890,171Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of fabricating a single-layer graphene on an entire surface of a SiC wafer, according to an various embodiments; [0030]
FIGS. 2A through 2D show cross-sectional views illustrating steps of a method of fabricating a single-layer graphene on the entire surface of a SiC wafer, …
FIG. 3 is a cross-sectional view illustrating a fabricated single-layer graphene on the entire surface of a SiC wafer, according to various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer, the method comprising: forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.
The method of claim 1, wherein the buffer layer is a top layer of the SiC wafer.
The method of claim 1, wherein the forming a plurality of graphene layers comprises sublimating silicon of the SiC wafer.
The method of claim 1, wherein the converting the buffer layer to the single-layer graphene comprises thermally treating the SiC wafer in a hydrogen atmosphere or in a lithium gas atmosphere to make a silicon-hydrogen bond or lithium-silicon bond, respectively.
A SiC wafer comprising a single-layer graphene formed on an entire surface of the SiC wafer, the SiC wafer being fabricated by the method of claim 1. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
SiC wafer with single-layer graphene on entire surface
field-effect transistor array
Materials described outside the worked examples.
single-layer graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge mobility of graphene (background reference) | 200000 cm²/(V·s) | C |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,890,171Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of fabricating a single-layer graphene on an entire surface of a SiC wafer, according to an various embodiments; [0030]
FIGS. 2A through 2D show cross-sectional views illustrating steps of a method of fabricating a single-layer graphene on the entire surface of a SiC wafer, …
FIG. 3 is a cross-sectional view illustrating a fabricated single-layer graphene on the entire surface of a SiC wafer, according to various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer, the method comprising: forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.
The method of claim 1, wherein the buffer layer is a top layer of the SiC wafer.
The method of claim 1, wherein the forming a plurality of graphene layers comprises sublimating silicon of the SiC wafer.
The method of claim 1, wherein the converting the buffer layer to the single-layer graphene comprises thermally treating the SiC wafer in a hydrogen atmosphere or in a lithium gas atmosphere to make a silicon-hydrogen bond or lithium-silicon bond, respectively.
A SiC wafer comprising a single-layer graphene formed on an entire surface of the SiC wafer, the SiC wafer being fabricated by the method of claim 1. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
SiC wafer with single-layer graphene on entire surface
field-effect transistor array
Materials described outside the worked examples.
single-layer graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge mobility of graphene (background reference) | 200000 cm²/(V·s) | C |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
acid intercalant
alkali metal intercalant
polydimethylsiloxane (PDMS)
sulfuric acid
H₂SO₄
nitric acid
HNO₃
hydrogen gas
H₂
lithium gas
Li
metal adhesive layer
polymer support member
| — |
Duration | 2–3 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 10–1000 nm | — |
Pressure | 1e-9 torr | — |
Pressure | 0–9 torr | — |
Temperature | ≥ 1300 °C | — |
METHOD FOR GROWING GRAPHENE ON SURFACE OF GATE ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACE OF SOURCE/DRAIN SURFACE
acid intercalant
alkali metal intercalant
polydimethylsiloxane (PDMS)
sulfuric acid
H₂SO₄
nitric acid
HNO₃
hydrogen gas
H₂
lithium gas
Li
metal adhesive layer
polymer support member
| — |
Duration | 2–3 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 10–1000 nm | — |
Pressure | 1e-9 torr | — |
Pressure | 0–9 torr | — |
Temperature | ≥ 1300 °C | — |
METHOD FOR GROWING GRAPHENE ON SURFACE OF GATE ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACE OF SOURCE/DRAIN SURFACE
acid intercalant
alkali metal intercalant
polydimethylsiloxane (PDMS)
sulfuric acid
H₂SO₄
nitric acid
HNO₃
hydrogen gas
H₂
lithium gas
Li
metal adhesive layer
polymer support member
| — |
Duration | 2–3 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 10–1000 nm | — |
Pressure | 1e-9 torr | — |
Pressure | 0–9 torr | — |
Temperature | ≥ 1300 °C | — |
METHOD FOR GROWING GRAPHENE ON SURFACE OF GATE ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACE OF SOURCE/DRAIN SURFACE
acid intercalant
alkali metal intercalant
polydimethylsiloxane (PDMS)
sulfuric acid
H₂SO₄
nitric acid
HNO₃
hydrogen gas
H₂
lithium gas
Li
metal adhesive layer
polymer support member
| — |
Duration | 2–3 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 10–1000 nm | — |
Pressure | 1e-9 torr | — |
Pressure | 0–9 torr | — |
Temperature | ≥ 1300 °C | — |
METHOD FOR GROWING GRAPHENE ON SURFACE OF GATE ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACE OF SOURCE/DRAIN SURFACE