A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) positioning the substrate that includes the gate electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-700 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the gate electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) providing a solid-state carbon source and a solvent, dissolving the solid-state carbon source in the solvent to form a mixture solution, uniformly coating the mixture solution on the substrate that includes the gate electrode to form an organic film covering the gate electrode and the substrate, followed by baking at 5 0C-1000C in vacuum for 1-4h to remove the solvent within the organic film; and (3) positioning the substrate that is covered with the organic film in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber, introducing H 2 gas, wherein a flow rate of H 2 gas is 10-200 SC CM, increasing a temperature inside the PECVD reaction chamber to 400C-700 C, an overall pressure of the PECVD reaction chamber being kept at 23 Torr, wherein the solid-state carbon source of the organic film is converted in the PECVD reaction chamber into graphene and reaction time is 5-60min, then the supply of H 2 gas is cut off and the PECVD facility shut down to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode of the substrate.

A method for growing graphene on a surface of a source/drain electrode, comprising the following steps: (1) providing a substrate that includes a source/drain electrode, wherein the source/drain electrode contains metallic copper; (2) positioning the substrate that includes the source/drain electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-400 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the source/drain electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the source/drain electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) positioning the substrate that includes the gate electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-700 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the gate electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) providing a solid-state carbon source and a solvent, dissolving the solid-state carbon source in the solvent to form a mixture solution, uniformly coating the mixture solution on the substrate that includes the gate electrode to form an organic film covering the gate electrode and the substrate, followed by baking at 5 0C-1000C in vacuum for 1-4h to remove the solvent within the organic film; and (3) positioning the substrate that is covered with the organic film in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber, introducing H 2 gas, wherein a flow rate of H 2 gas is 10-200 SC CM, increasing a temperature inside the PECVD reaction chamber to 400C-700 C, an overall pressure of the PECVD reaction chamber being kept at 23 Torr, wherein the solid-state carbon source of the organic film is converted in the PECVD reaction chamber into graphene and reaction time is 5-60min, then the supply of H 2 gas is cut off and the PECVD facility shut down to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode of the substrate.

A method for growing graphene on a surface of a source/drain electrode, comprising the following steps: (1) providing a substrate that includes a source/drain electrode, wherein the source/drain electrode contains metallic copper; (2) positioning the substrate that includes the source/drain electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-400 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the source/drain electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the source/drain electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) positioning the substrate that includes the gate electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-700 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the gate electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) providing a solid-state carbon source and a solvent, dissolving the solid-state carbon source in the solvent to form a mixture solution, uniformly coating the mixture solution on the substrate that includes the gate electrode to form an organic film covering the gate electrode and the substrate, followed by baking at 5 0C-1000C in vacuum for 1-4h to remove the solvent within the organic film; and (3) positioning the substrate that is covered with the organic film in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber, introducing H 2 gas, wherein a flow rate of H 2 gas is 10-200 SC CM, increasing a temperature inside the PECVD reaction chamber to 400C-700 C, an overall pressure of the PECVD reaction chamber being kept at 23 Torr, wherein the solid-state carbon source of the organic film is converted in the PECVD reaction chamber into graphene and reaction time is 5-60min, then the supply of H 2 gas is cut off and the PECVD facility shut down to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode of the substrate.

A method for growing graphene on a surface of a source/drain electrode, comprising the following steps: (1) providing a substrate that includes a source/drain electrode, wherein the source/drain electrode contains metallic copper; (2) positioning the substrate that includes the source/drain electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-400 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the source/drain electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the source/drain electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) positioning the substrate that includes the gate electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-700 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the gate electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode.

A method for growing graphene on a surface of a gate electrode, comprising the following steps: (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper; (2) providing a solid-state carbon source and a solvent, dissolving the solid-state carbon source in the solvent to form a mixture solution, uniformly coating the mixture solution on the substrate that includes the gate electrode to form an organic film covering the gate electrode and the substrate, followed by baking at 5 0C-1000C in vacuum for 1-4h to remove the solvent within the organic film; and (3) positioning the substrate that is covered with the organic film in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber, introducing H 2 gas, wherein a flow rate of H 2 gas is 10-200 SC CM, increasing a temperature inside the PECVD reaction chamber to 400C-700 C, an overall pressure of the PECVD reaction chamber being kept at 23 Torr, wherein the solid-state carbon source of the organic film is converted in the PECVD reaction chamber into graphene and reaction time is 5-60min, then the supply of H 2 gas is cut off and the PECVD facility shut down to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode of the substrate.

A method for growing graphene on a surface of a source/drain electrode, comprising the following steps: (1) providing a substrate that includes a source/drain electrode, wherein the source/drain electrode contains metallic copper; (2) positioning the substrate that includes the source/drain electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H 2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 3 00C-400 C, a gas flow rate of H 2 gas being 10 SC C M to 200 SC C M, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800W; and (3) continuously introducing H 2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the source/drain electrode, wherein a ratio of flow rate between the hydrocarbon gas and H 2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10m in, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the source/drain electrode.