Patent
US 8,632,633IN-SITU GROWTH OF ENGINEERED DEFECTS IN GRAPHENE BY EPITAXIAL REPRODUCTION
Delmar L. Barker, Brian J. Zelinski, William R. Owens
Raytheon Company·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,632,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, as described above, is a diagram illustrating the disruption of the graphene lattice to form a Stone-Wales defect pair;
FIG. 3 is a flow diagram of an epitaxial process for forming engineered defects in-situ with graphene through the manipulation of the graphene-matched substrate …
FIG. 8 is a diagram of graphene including different engineered defects located in different locations;
FIG. 10 is a diagram of a resonant cavity constructed from an ordered array of engineered defects in graphene; 15
FIG. 11 is a diagram of a coupled waveguide constructed from an ordered array of engineered defects in graphene; and
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a graphene sheet.
The method of claim 1, wherein the non-planar features strain and asymmetrically distort the hexagonal crystal lattice of the epitaxially formed graphene to form in-situ the engineered defects.
The method of claim 1, wherein the surface is manipulated to create the one or more nonplanar features of a specific size and shape to form a particular engineered defect.
The method of claim 1, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects.
The method of claim 1, wherein individual defects have a maximum dimensions from approximately 1 nm to approximately 20 nanometers.
The method of claim 1, wherein the defects form structures having a maximum 10 dimensions from approximately 1 nm to approximately 100 um.
The method of claim 1, wherein the in-situ engineered defects comprise Stone- Wales defect pairs.
The method of claim 1, wherein the in-situ engineered defects define a planar waveguide.
The method of claim 1, wherein the in-situ engineered defects define a resonant cavity.
The method of claim 1, wherein different in-situ engineered defects define a planar semiconductor device in the graphene sheet.
The method of claim 1, further comprising epitaxially forming a second layer of carbon atoms to form a second graphene sheet.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in and bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features to form different in-situ engineered defects at different locations in the graphene sheet.
A method of forming in-situ engineered defects in graphene, comprising the steps of: 11 providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to form a graphene sheet, said non-planar features straining and asymmetrically distorting the hexagonal crystal lattice of the epitaxially formed graphene to reproduce in-situ engineered Stone-Wales defects or defect pairs over the one or more non-planar features in a graphene sheet.
The method of claim 17, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects comprising a particular type of defect, arrangement of defects and density of defects.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a first graphene sheet; removing the graphene sheet including the in-situ engineered defects; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in a second graphene sheet substantially similar to the first graphene sheet.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A focused ion beam (FIB) is used to mill a pattern of pits in the hexagonal lattice on the surface of an iron (Fe) substrate suitably provided on a silicon carrier. A molecular beam is used to deposit a single epitaxial layer of carbon atoms over the substrate forming in-situ engineered Stone-Wales defect pairs in a structured pattern in a graphene sheet. The pits are designed and milled to stress the 6:6 hexagonal lattice to produce the 5:7 Stone-Wales defect pairs.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet with in-situ engineered defects
planar waveguide defined by engineered defects in graphene
resonant cavity defined by engineered defects in graphene
planar semiconductor device defined by engineered defects in graphene
Materials described outside the worked examples.
Silicon Carbide (SiC)
SiC
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–20 nm | — |
Thickness | 1–100000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,632,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, as described above, is a diagram illustrating the disruption of the graphene lattice to form a Stone-Wales defect pair;
FIG. 3 is a flow diagram of an epitaxial process for forming engineered defects in-situ with graphene through the manipulation of the graphene-matched substrate …
FIG. 8 is a diagram of graphene including different engineered defects located in different locations;
FIG. 10 is a diagram of a resonant cavity constructed from an ordered array of engineered defects in graphene; 15
FIG. 11 is a diagram of a coupled waveguide constructed from an ordered array of engineered defects in graphene; and
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a graphene sheet.
The method of claim 1, wherein the non-planar features strain and asymmetrically distort the hexagonal crystal lattice of the epitaxially formed graphene to form in-situ the engineered defects.
The method of claim 1, wherein the surface is manipulated to create the one or more nonplanar features of a specific size and shape to form a particular engineered defect.
The method of claim 1, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects.
The method of claim 1, wherein individual defects have a maximum dimensions from approximately 1 nm to approximately 20 nanometers.
The method of claim 1, wherein the defects form structures having a maximum 10 dimensions from approximately 1 nm to approximately 100 um.
The method of claim 1, wherein the in-situ engineered defects comprise Stone- Wales defect pairs.
The method of claim 1, wherein the in-situ engineered defects define a planar waveguide.
The method of claim 1, wherein the in-situ engineered defects define a resonant cavity.
The method of claim 1, wherein different in-situ engineered defects define a planar semiconductor device in the graphene sheet.
The method of claim 1, further comprising epitaxially forming a second layer of carbon atoms to form a second graphene sheet.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in and bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features to form different in-situ engineered defects at different locations in the graphene sheet.
A method of forming in-situ engineered defects in graphene, comprising the steps of: 11 providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to form a graphene sheet, said non-planar features straining and asymmetrically distorting the hexagonal crystal lattice of the epitaxially formed graphene to reproduce in-situ engineered Stone-Wales defects or defect pairs over the one or more non-planar features in a graphene sheet.
The method of claim 17, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects comprising a particular type of defect, arrangement of defects and density of defects.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a first graphene sheet; removing the graphene sheet including the in-situ engineered defects; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in a second graphene sheet substantially similar to the first graphene sheet.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A focused ion beam (FIB) is used to mill a pattern of pits in the hexagonal lattice on the surface of an iron (Fe) substrate suitably provided on a silicon carrier. A molecular beam is used to deposit a single epitaxial layer of carbon atoms over the substrate forming in-situ engineered Stone-Wales defect pairs in a structured pattern in a graphene sheet. The pits are designed and milled to stress the 6:6 hexagonal lattice to produce the 5:7 Stone-Wales defect pairs.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet with in-situ engineered defects
planar waveguide defined by engineered defects in graphene
resonant cavity defined by engineered defects in graphene
planar semiconductor device defined by engineered defects in graphene
Materials described outside the worked examples.
Silicon Carbide (SiC)
SiC
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–20 nm | — |
Thickness | 1–100000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,632,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, as described above, is a diagram illustrating the disruption of the graphene lattice to form a Stone-Wales defect pair;
FIG. 3 is a flow diagram of an epitaxial process for forming engineered defects in-situ with graphene through the manipulation of the graphene-matched substrate …
FIG. 8 is a diagram of graphene including different engineered defects located in different locations;
FIG. 10 is a diagram of a resonant cavity constructed from an ordered array of engineered defects in graphene; 15
FIG. 11 is a diagram of a coupled waveguide constructed from an ordered array of engineered defects in graphene; and
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a graphene sheet.
The method of claim 1, wherein the non-planar features strain and asymmetrically distort the hexagonal crystal lattice of the epitaxially formed graphene to form in-situ the engineered defects.
The method of claim 1, wherein the surface is manipulated to create the one or more nonplanar features of a specific size and shape to form a particular engineered defect.
The method of claim 1, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects.
The method of claim 1, wherein individual defects have a maximum dimensions from approximately 1 nm to approximately 20 nanometers.
The method of claim 1, wherein the defects form structures having a maximum 10 dimensions from approximately 1 nm to approximately 100 um.
The method of claim 1, wherein the in-situ engineered defects comprise Stone- Wales defect pairs.
The method of claim 1, wherein the in-situ engineered defects define a planar waveguide.
The method of claim 1, wherein the in-situ engineered defects define a resonant cavity.
The method of claim 1, wherein different in-situ engineered defects define a planar semiconductor device in the graphene sheet.
The method of claim 1, further comprising epitaxially forming a second layer of carbon atoms to form a second graphene sheet.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in and bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features to form different in-situ engineered defects at different locations in the graphene sheet.
A method of forming in-situ engineered defects in graphene, comprising the steps of: 11 providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to form a graphene sheet, said non-planar features straining and asymmetrically distorting the hexagonal crystal lattice of the epitaxially formed graphene to reproduce in-situ engineered Stone-Wales defects or defect pairs over the one or more non-planar features in a graphene sheet.
The method of claim 17, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects comprising a particular type of defect, arrangement of defects and density of defects.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a first graphene sheet; removing the graphene sheet including the in-situ engineered defects; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in a second graphene sheet substantially similar to the first graphene sheet.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A focused ion beam (FIB) is used to mill a pattern of pits in the hexagonal lattice on the surface of an iron (Fe) substrate suitably provided on a silicon carrier. A molecular beam is used to deposit a single epitaxial layer of carbon atoms over the substrate forming in-situ engineered Stone-Wales defect pairs in a structured pattern in a graphene sheet. The pits are designed and milled to stress the 6:6 hexagonal lattice to produce the 5:7 Stone-Wales defect pairs.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet with in-situ engineered defects
planar waveguide defined by engineered defects in graphene
resonant cavity defined by engineered defects in graphene
planar semiconductor device defined by engineered defects in graphene
Materials described outside the worked examples.
Silicon Carbide (SiC)
SiC
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–20 nm | — |
Thickness | 1–100000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,632,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, as described above, is a diagram illustrating the disruption of the graphene lattice to form a Stone-Wales defect pair;
FIG. 3 is a flow diagram of an epitaxial process for forming engineered defects in-situ with graphene through the manipulation of the graphene-matched substrate …
FIG. 8 is a diagram of graphene including different engineered defects located in different locations;
FIG. 10 is a diagram of a resonant cavity constructed from an ordered array of engineered defects in graphene; 15
FIG. 11 is a diagram of a coupled waveguide constructed from an ordered array of engineered defects in graphene; and
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a graphene sheet.
The method of claim 1, wherein the non-planar features strain and asymmetrically distort the hexagonal crystal lattice of the epitaxially formed graphene to form in-situ the engineered defects.
The method of claim 1, wherein the surface is manipulated to create the one or more nonplanar features of a specific size and shape to form a particular engineered defect.
The method of claim 1, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects.
The method of claim 1, wherein individual defects have a maximum dimensions from approximately 1 nm to approximately 20 nanometers.
The method of claim 1, wherein the defects form structures having a maximum 10 dimensions from approximately 1 nm to approximately 100 um.
The method of claim 1, wherein the in-situ engineered defects comprise Stone- Wales defect pairs.
The method of claim 1, wherein the in-situ engineered defects define a planar waveguide.
The method of claim 1, wherein the in-situ engineered defects define a resonant cavity.
The method of claim 1, wherein different in-situ engineered defects define a planar semiconductor device in the graphene sheet.
The method of claim 1, further comprising epitaxially forming a second layer of carbon atoms to form a second graphene sheet.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features comprising pits in and bumps on the surface.
The method of claim 1, wherein the surface of the single crystal region is manipulated to form non-planar features to form different in-situ engineered defects at different locations in the graphene sheet.
A method of forming in-situ engineered defects in graphene, comprising the steps of: 11 providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to form a graphene sheet, said non-planar features straining and asymmetrically distorting the hexagonal crystal lattice of the epitaxially formed graphene to reproduce in-situ engineered Stone-Wales defects or defect pairs over the one or more non-planar features in a graphene sheet.
The method of claim 17, wherein the surface is manipulated to create a structured pattern of non-planar features to form a structured pattern of engineered defects comprising a particular type of defect, arrangement of defects and density of defects.
A method of forming in-situ engineered defects in graphene, comprising the steps of: providing a substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to 5 graphene; manipulating the surface of the single crystal region to create one or more non- planar features in the hexagonal crystal lattice; epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in 10 a first graphene sheet; removing the graphene sheet including the in-situ engineered defects; and epitaxially forming a layer of carbon atoms on the surface of the single crystal region to reproduce in-situ engineered defects over the one or more non-planar features in a second graphene sheet substantially similar to the first graphene sheet.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A focused ion beam (FIB) is used to mill a pattern of pits in the hexagonal lattice on the surface of an iron (Fe) substrate suitably provided on a silicon carrier. A molecular beam is used to deposit a single epitaxial layer of carbon atoms over the substrate forming in-situ engineered Stone-Wales defect pairs in a structured pattern in a graphene sheet. The pits are designed and milled to stress the 6:6 hexagonal lattice to produce the 5:7 Stone-Wales defect pairs.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet with in-situ engineered defects
planar waveguide defined by engineered defects in graphene
resonant cavity defined by engineered defects in graphene
planar semiconductor device defined by engineered defects in graphene
Materials described outside the worked examples.
Silicon Carbide (SiC)
SiC
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 is a diagram of a FET constructed from an engineered defect in graphene DETAILED DESCRIPTION OF THE INVENTION 20 The present invention provides in-situ …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–20 nm | — |
Thickness | 1–100000 nm |
Related documents with shared materials, methods, properties, or citations.
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