Patent
Atlas literature
Patent
US 9,157,888Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4602-107 Section I (Amendments to the Claims) Please cancel claim 12, and amend claim 1, as set out in the following listing of the claims of the application.
The field effect transistor as claimed in claim 1, wherein the gap is designed as a flow-through channel, the height of which is defined by the distance between the gate electrode and the chemically sensitive channel.
The field effect transistor as claimed in claim 13, wherein the second part further comprises the drain electrode and the source electrode a rr anged on the insulating surface of the gate substrate, and which by the mounting are brought in physical contact with the first part, thereby establishing the electrical connection between the graphene layer and the source electrode and the drain electrode.
The field effect transistor as claimed in claim 13, wherein said flow- through channel has a closed cross-section. 7
A chemical sensor comprising the field effect transistor as claimed in claim 1, wherein the chemical sensor comprises circuitry arranged to electrically bias the field effect transistor so that a chemical to be sensed which comes in contact with the chemically sensitive channel results in a change of an electrical signal, wherein the change is indicative of the chemical being sensed.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a current source a rr anged to flow a constant current between the source electrode and the drain electrode and by comprising a voltage source a rr anged to supply a constant voltage to the gate electrode, wherein the electrical signal indicative of the sensed chemical is a voltage between the source electrode and the drain electrode.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a voltage source a rr anged to apply a constant voltage between the source electrode and the drain electrode, wherein the electrical signal indicative of the sensed chemical is a gate electrode voltage required to maintain a constant cu rr ent between the source electrode and the drain electrode.
Use of a field effect transistor as claimed in claim 1, for chemical sensing.
The use as claimed in claim 18, wherein the chemical sensing 5 4602-107 comprises guiding a chemical to be sensed from an ambient environment to the gap.
A method for producing the field effect transistor as claimed in claim 1, wherein the method comprises the steps of: -providing a wafer that comprises an epitaxial graphene layer on a silicon carbide wafer substrate; and -forming the continuous monocrystalline graphene layer of the field effect transistor from the epitaxial graphene layer; -providing the continuous monocrystalline graphene layer a rr anged on the graphene layer substrate as a first separate part; -providing a second separate part comprising the gate electrode arranged on an insulating surface of a gate substrate; and -forming the field effect transistor for chemical sensing by mounting the first and second separate parts to each other.
The method as claimed in claim 20, wherein the step of providing the wafer comprises:-providing a silicon carbide wafer substrate; and -growing the epitaxial graphene layer on the silicon carbide wafer substrate by sublimation of silicon from the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the step of forming the continuous monocrystalline graphene layer comprises: -cutting the wafer so that the continuous monocrystalline graphene layer arranged on the graphene layer insulating substrate is formed from a cut piece of the epitaxial graphene layer with underlying part of the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the second separate part also comprises the drain electrode and the source electrode arranged on the insulating surface of the gate substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor for chemical sensing
chemical sensor
Materials described outside the worked examples.
continuous monocrystalline graphene layer
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 4602-107 Sec | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,157,888Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4602-107 Section I (Amendments to the Claims) Please cancel claim 12, and amend claim 1, as set out in the following listing of the claims of the application.
The field effect transistor as claimed in claim 1, wherein the gap is designed as a flow-through channel, the height of which is defined by the distance between the gate electrode and the chemically sensitive channel.
The field effect transistor as claimed in claim 13, wherein the second part further comprises the drain electrode and the source electrode a rr anged on the insulating surface of the gate substrate, and which by the mounting are brought in physical contact with the first part, thereby establishing the electrical connection between the graphene layer and the source electrode and the drain electrode.
The field effect transistor as claimed in claim 13, wherein said flow- through channel has a closed cross-section. 7
A chemical sensor comprising the field effect transistor as claimed in claim 1, wherein the chemical sensor comprises circuitry arranged to electrically bias the field effect transistor so that a chemical to be sensed which comes in contact with the chemically sensitive channel results in a change of an electrical signal, wherein the change is indicative of the chemical being sensed.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a current source a rr anged to flow a constant current between the source electrode and the drain electrode and by comprising a voltage source a rr anged to supply a constant voltage to the gate electrode, wherein the electrical signal indicative of the sensed chemical is a voltage between the source electrode and the drain electrode.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a voltage source a rr anged to apply a constant voltage between the source electrode and the drain electrode, wherein the electrical signal indicative of the sensed chemical is a gate electrode voltage required to maintain a constant cu rr ent between the source electrode and the drain electrode.
Use of a field effect transistor as claimed in claim 1, for chemical sensing.
The use as claimed in claim 18, wherein the chemical sensing 5 4602-107 comprises guiding a chemical to be sensed from an ambient environment to the gap.
A method for producing the field effect transistor as claimed in claim 1, wherein the method comprises the steps of: -providing a wafer that comprises an epitaxial graphene layer on a silicon carbide wafer substrate; and -forming the continuous monocrystalline graphene layer of the field effect transistor from the epitaxial graphene layer; -providing the continuous monocrystalline graphene layer a rr anged on the graphene layer substrate as a first separate part; -providing a second separate part comprising the gate electrode arranged on an insulating surface of a gate substrate; and -forming the field effect transistor for chemical sensing by mounting the first and second separate parts to each other.
The method as claimed in claim 20, wherein the step of providing the wafer comprises:-providing a silicon carbide wafer substrate; and -growing the epitaxial graphene layer on the silicon carbide wafer substrate by sublimation of silicon from the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the step of forming the continuous monocrystalline graphene layer comprises: -cutting the wafer so that the continuous monocrystalline graphene layer arranged on the graphene layer insulating substrate is formed from a cut piece of the epitaxial graphene layer with underlying part of the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the second separate part also comprises the drain electrode and the source electrode arranged on the insulating surface of the gate substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor for chemical sensing
chemical sensor
Materials described outside the worked examples.
continuous monocrystalline graphene layer
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 4602-107 Sec | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,157,888Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4602-107 Section I (Amendments to the Claims) Please cancel claim 12, and amend claim 1, as set out in the following listing of the claims of the application.
The field effect transistor as claimed in claim 1, wherein the gap is designed as a flow-through channel, the height of which is defined by the distance between the gate electrode and the chemically sensitive channel.
The field effect transistor as claimed in claim 13, wherein the second part further comprises the drain electrode and the source electrode a rr anged on the insulating surface of the gate substrate, and which by the mounting are brought in physical contact with the first part, thereby establishing the electrical connection between the graphene layer and the source electrode and the drain electrode.
The field effect transistor as claimed in claim 13, wherein said flow- through channel has a closed cross-section. 7
A chemical sensor comprising the field effect transistor as claimed in claim 1, wherein the chemical sensor comprises circuitry arranged to electrically bias the field effect transistor so that a chemical to be sensed which comes in contact with the chemically sensitive channel results in a change of an electrical signal, wherein the change is indicative of the chemical being sensed.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a current source a rr anged to flow a constant current between the source electrode and the drain electrode and by comprising a voltage source a rr anged to supply a constant voltage to the gate electrode, wherein the electrical signal indicative of the sensed chemical is a voltage between the source electrode and the drain electrode.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a voltage source a rr anged to apply a constant voltage between the source electrode and the drain electrode, wherein the electrical signal indicative of the sensed chemical is a gate electrode voltage required to maintain a constant cu rr ent between the source electrode and the drain electrode.
Use of a field effect transistor as claimed in claim 1, for chemical sensing.
The use as claimed in claim 18, wherein the chemical sensing 5 4602-107 comprises guiding a chemical to be sensed from an ambient environment to the gap.
A method for producing the field effect transistor as claimed in claim 1, wherein the method comprises the steps of: -providing a wafer that comprises an epitaxial graphene layer on a silicon carbide wafer substrate; and -forming the continuous monocrystalline graphene layer of the field effect transistor from the epitaxial graphene layer; -providing the continuous monocrystalline graphene layer a rr anged on the graphene layer substrate as a first separate part; -providing a second separate part comprising the gate electrode arranged on an insulating surface of a gate substrate; and -forming the field effect transistor for chemical sensing by mounting the first and second separate parts to each other.
The method as claimed in claim 20, wherein the step of providing the wafer comprises:-providing a silicon carbide wafer substrate; and -growing the epitaxial graphene layer on the silicon carbide wafer substrate by sublimation of silicon from the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the step of forming the continuous monocrystalline graphene layer comprises: -cutting the wafer so that the continuous monocrystalline graphene layer arranged on the graphene layer insulating substrate is formed from a cut piece of the epitaxial graphene layer with underlying part of the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the second separate part also comprises the drain electrode and the source electrode arranged on the insulating surface of the gate substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor for chemical sensing
chemical sensor
Materials described outside the worked examples.
continuous monocrystalline graphene layer
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 4602-107 Sec | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,157,888Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4602-107 Section I (Amendments to the Claims) Please cancel claim 12, and amend claim 1, as set out in the following listing of the claims of the application.
The field effect transistor as claimed in claim 1, wherein the gap is designed as a flow-through channel, the height of which is defined by the distance between the gate electrode and the chemically sensitive channel.
The field effect transistor as claimed in claim 13, wherein the second part further comprises the drain electrode and the source electrode a rr anged on the insulating surface of the gate substrate, and which by the mounting are brought in physical contact with the first part, thereby establishing the electrical connection between the graphene layer and the source electrode and the drain electrode.
The field effect transistor as claimed in claim 13, wherein said flow- through channel has a closed cross-section. 7
A chemical sensor comprising the field effect transistor as claimed in claim 1, wherein the chemical sensor comprises circuitry arranged to electrically bias the field effect transistor so that a chemical to be sensed which comes in contact with the chemically sensitive channel results in a change of an electrical signal, wherein the change is indicative of the chemical being sensed.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a current source a rr anged to flow a constant current between the source electrode and the drain electrode and by comprising a voltage source a rr anged to supply a constant voltage to the gate electrode, wherein the electrical signal indicative of the sensed chemical is a voltage between the source electrode and the drain electrode.
The chemical sensor as claimed in claim 15, wherein the circuitry comprises a voltage source a rr anged to apply a constant voltage between the source electrode and the drain electrode, wherein the electrical signal indicative of the sensed chemical is a gate electrode voltage required to maintain a constant cu rr ent between the source electrode and the drain electrode.
Use of a field effect transistor as claimed in claim 1, for chemical sensing.
The use as claimed in claim 18, wherein the chemical sensing 5 4602-107 comprises guiding a chemical to be sensed from an ambient environment to the gap.
A method for producing the field effect transistor as claimed in claim 1, wherein the method comprises the steps of: -providing a wafer that comprises an epitaxial graphene layer on a silicon carbide wafer substrate; and -forming the continuous monocrystalline graphene layer of the field effect transistor from the epitaxial graphene layer; -providing the continuous monocrystalline graphene layer a rr anged on the graphene layer substrate as a first separate part; -providing a second separate part comprising the gate electrode arranged on an insulating surface of a gate substrate; and -forming the field effect transistor for chemical sensing by mounting the first and second separate parts to each other.
The method as claimed in claim 20, wherein the step of providing the wafer comprises:-providing a silicon carbide wafer substrate; and -growing the epitaxial graphene layer on the silicon carbide wafer substrate by sublimation of silicon from the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the step of forming the continuous monocrystalline graphene layer comprises: -cutting the wafer so that the continuous monocrystalline graphene layer arranged on the graphene layer insulating substrate is formed from a cut piece of the epitaxial graphene layer with underlying part of the silicon carbide wafer substrate.
The method as claimed in claim 20, wherein the second separate part also comprises the drain electrode and the source electrode arranged on the insulating surface of the gate substrate.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor for chemical sensing
chemical sensor
Materials described outside the worked examples.
continuous monocrystalline graphene layer
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 4602-107 Sec | — |
Related documents with shared materials, methods, properties, or citations.
