Patent
US 9,647,124SEMICONDUCTOR DEVICES WITH GRAPHENE NANORIBBONS
Emre Alptekin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,647,124Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4 show processing steps and respective structures in accordance with aspects of the present invention; [0010]
FIG. 2, the multiple layers of Si material 15 and SiC material 20 are formed into respective stacks (e.g., FINs) 25. As an example, the FINs 25 can be formed …
FIG. 3, the FINs 25 undergo an annealing process to form graphene nanoribbons 30. In more specific embodiments, the graphene nanoribbons 30 are formed about …
FIG. 4 shows illustrative, non-limiting gate formation processes in accordance with aspects of the present invention. The gate formation processes can be, for …
FIG. 5 shows processing steps and a respective structure in accordance with additional aspects of the present invention; and [0011]
FIG. 6 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: one or more fins each in the form of a vertical stack of multiple layers of alternating Si material and SiC material stacked directly on top of one another; graphene nanoribbons disposed about the SiC material on each of the one or more fins; and a gate structure extending over the one or more fins.
The structure of claim 1, wherein each of the graphene nanoribbons is a monolayer graphene nanoribbon formed about each layer of the SiC material.
The structure of claim 1, wherein the size of the graphene nanoribbons are based on a thickness of the SiC material in the one or more fin stacks.
The structure of claim 1, wherein the SiC material has a thickness of about 0.5 nm to 5 nm.
The structure of claim 1, wherein the SiC material has a thickness of about 1 nm to 5 nm.
canceled
canceled
5GF-40096US₂ 2 App l. No. 15/060,806 F I S₉₂₀₁₃₀₁₃₅US₂
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon FINFET
Materials described outside the worked examples.
Si material
Si
SiC material
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of 3 nm graphene nanoribbon | 0.46 eV | graphene nanoribbons |
bandgap of 2 nm graphene nanoribbon |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,647,124Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4 show processing steps and respective structures in accordance with aspects of the present invention; [0010]
FIG. 2, the multiple layers of Si material 15 and SiC material 20 are formed into respective stacks (e.g., FINs) 25. As an example, the FINs 25 can be formed …
FIG. 3, the FINs 25 undergo an annealing process to form graphene nanoribbons 30. In more specific embodiments, the graphene nanoribbons 30 are formed about …
FIG. 4 shows illustrative, non-limiting gate formation processes in accordance with aspects of the present invention. The gate formation processes can be, for …
FIG. 5 shows processing steps and a respective structure in accordance with additional aspects of the present invention; and [0011]
FIG. 6 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: one or more fins each in the form of a vertical stack of multiple layers of alternating Si material and SiC material stacked directly on top of one another; graphene nanoribbons disposed about the SiC material on each of the one or more fins; and a gate structure extending over the one or more fins.
The structure of claim 1, wherein each of the graphene nanoribbons is a monolayer graphene nanoribbon formed about each layer of the SiC material.
The structure of claim 1, wherein the size of the graphene nanoribbons are based on a thickness of the SiC material in the one or more fin stacks.
The structure of claim 1, wherein the SiC material has a thickness of about 0.5 nm to 5 nm.
The structure of claim 1, wherein the SiC material has a thickness of about 1 nm to 5 nm.
canceled
canceled
5GF-40096US₂ 2 App l. No. 15/060,806 F I S₉₂₀₁₃₀₁₃₅US₂
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon FINFET
Materials described outside the worked examples.
Si material
Si
SiC material
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of 3 nm graphene nanoribbon | 0.46 eV | graphene nanoribbons |
bandgap of 2 nm graphene nanoribbon |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,647,124Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4 show processing steps and respective structures in accordance with aspects of the present invention; [0010]
FIG. 2, the multiple layers of Si material 15 and SiC material 20 are formed into respective stacks (e.g., FINs) 25. As an example, the FINs 25 can be formed …
FIG. 3, the FINs 25 undergo an annealing process to form graphene nanoribbons 30. In more specific embodiments, the graphene nanoribbons 30 are formed about …
FIG. 4 shows illustrative, non-limiting gate formation processes in accordance with aspects of the present invention. The gate formation processes can be, for …
FIG. 5 shows processing steps and a respective structure in accordance with additional aspects of the present invention; and [0011]
FIG. 6 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: one or more fins each in the form of a vertical stack of multiple layers of alternating Si material and SiC material stacked directly on top of one another; graphene nanoribbons disposed about the SiC material on each of the one or more fins; and a gate structure extending over the one or more fins.
The structure of claim 1, wherein each of the graphene nanoribbons is a monolayer graphene nanoribbon formed about each layer of the SiC material.
The structure of claim 1, wherein the size of the graphene nanoribbons are based on a thickness of the SiC material in the one or more fin stacks.
The structure of claim 1, wherein the SiC material has a thickness of about 0.5 nm to 5 nm.
The structure of claim 1, wherein the SiC material has a thickness of about 1 nm to 5 nm.
canceled
canceled
5GF-40096US₂ 2 App l. No. 15/060,806 F I S₉₂₀₁₃₀₁₃₅US₂
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon FINFET
Materials described outside the worked examples.
Si material
Si
SiC material
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of 3 nm graphene nanoribbon | 0.46 eV | graphene nanoribbons |
bandgap of 2 nm graphene nanoribbon |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,647,124Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-4 show processing steps and respective structures in accordance with aspects of the present invention; [0010]
FIG. 2, the multiple layers of Si material 15 and SiC material 20 are formed into respective stacks (e.g., FINs) 25. As an example, the FINs 25 can be formed …
FIG. 3, the FINs 25 undergo an annealing process to form graphene nanoribbons 30. In more specific embodiments, the graphene nanoribbons 30 are formed about …
FIG. 4 shows illustrative, non-limiting gate formation processes in accordance with aspects of the present invention. The gate formation processes can be, for …
FIG. 5 shows processing steps and a respective structure in accordance with additional aspects of the present invention; and [0011]
FIG. 6 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: one or more fins each in the form of a vertical stack of multiple layers of alternating Si material and SiC material stacked directly on top of one another; graphene nanoribbons disposed about the SiC material on each of the one or more fins; and a gate structure extending over the one or more fins.
The structure of claim 1, wherein each of the graphene nanoribbons is a monolayer graphene nanoribbon formed about each layer of the SiC material.
The structure of claim 1, wherein the size of the graphene nanoribbons are based on a thickness of the SiC material in the one or more fin stacks.
The structure of claim 1, wherein the SiC material has a thickness of about 0.5 nm to 5 nm.
The structure of claim 1, wherein the SiC material has a thickness of about 1 nm to 5 nm.
canceled
canceled
5GF-40096US₂ 2 App l. No. 15/060,806 F I S₉₂₀₁₃₀₁₃₅US₂
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon FINFET
Materials described outside the worked examples.
Si material
Si
SiC material
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of 3 nm graphene nanoribbon | 0.46 eV | graphene nanoribbons |
bandgap of 2 nm graphene nanoribbon |
Related documents with shared materials, methods, properties, or citations.
graphene nanoribbons
| 0.6 eV |
graphene nanoribbons |
carrier mobility of graphene channel | 10000 cm²/Vs | graphene nanoribbons |
Thickness | 0.5–5 nm | — |
Thickness | 1–5 nm | — |
Thickness | 2–3 nm | — |
Thickness | 10–30 nm | — |
Thickness | 50–100 nm | — |
Duration | 30–300 minutes | — |
Thickness | ≤ 5 nm | — |
graphene nanoribbons
| 0.6 eV |
graphene nanoribbons |
carrier mobility of graphene channel | 10000 cm²/Vs | graphene nanoribbons |
Thickness | 0.5–5 nm | — |
Thickness | 1–5 nm | — |
Thickness | 2–3 nm | — |
Thickness | 10–30 nm | — |
Thickness | 50–100 nm | — |
Duration | 30–300 minutes | — |
Thickness | ≤ 5 nm | — |
graphene nanoribbons
| 0.6 eV |
graphene nanoribbons |
carrier mobility of graphene channel | 10000 cm²/Vs | graphene nanoribbons |
Thickness | 0.5–5 nm | — |
Thickness | 1–5 nm | — |
Thickness | 2–3 nm | — |
Thickness | 10–30 nm | — |
Thickness | 50–100 nm | — |
Duration | 30–300 minutes | — |
Thickness | ≤ 5 nm | — |
graphene nanoribbons
| 0.6 eV |
graphene nanoribbons |
carrier mobility of graphene channel | 10000 cm²/Vs | graphene nanoribbons |
Thickness | 0.5–5 nm | — |
Thickness | 1–5 nm | — |
Thickness | 2–3 nm | — |
Thickness | 10–30 nm | — |
Thickness | 50–100 nm | — |
Duration | 30–300 minutes | — |
Thickness | ≤ 5 nm | — |