Patent
US 8,536,616MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME
Edward Yi Chang
US
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Atlas literature
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US 8,536,616Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, the portion of the silicon nitride layer 11 which is not covered by the mesh resist layer 12 is removed to form a mesh layer 111. The mesh layer 111 …
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure having a gallium nitride layer, comprising: a substrate; a mesh layer disposed on the substrate and having a plurality of openings for exposing the substrate; a buffer layer disposed on the substrate in the openings and essentially consisting of a plurality of nitride layers; a lower aluminum gallium nitride layer, an intermediate aluminum gallium nitride layer and an upper aluminum gallium nitride layer with different aluminum concentrations in sequence formed on the buffer layer, wherein an aluminum concentration of the lower aluminum gallium nitride layer is higher than an aluminum concentration of the intermediate aluminum gallium nitride layer, the aluminum concentration of the intermediate aluminum gallium nitride layer is higher than an aluminum concentration of the upper aluminum gallium nitride layer, and the aluminum concentration of the intermediate aluminum gallium nitride layer is decreased in an upward direction from the lower aluminum gallium nitride layer; and a gallium nitride layer disposed on the upper aluminum gallium nitride layer.
The multilayer structure of claim 7, further comprising a top aluminum gallium nitride layer disposed on the gallium nitride layer.
The multilayer structure of claim 7, wherein the substrate is made of silicon, sapphire, gallium nitride, zin c oxide or silicon carbide, and the mesh layer is made of silicon nitride, and the nitride layers are selected from the group consisting of an aluminum nitride layer, a gallium nitride layer and an aluminum gallium nitride layer.
America 17066536.1 Application No. Not Yet Assigned 4 Docket No.: 87816D I V(71987) Amendment dated First Preliminary Amendment 10. The multilayer structure of claim 7, wherein the buffer layer is a high- temperature nitride layer/low-temperature nitride layer/high-temperature nitride layer, the high- temperature nitride layer is formed at 1000-1200 ° C, and the low-temperature nitride layer is formed at 700-900 °C.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
A silicon substrate (preferably Si(111)) is used. A silicon nitride (SixNy) layer of 300 nm thickness is formed on the substrate by PECVD. A mesh resist layer is patterned and the exposed silicon nitride is removed to form a mesh layer with rectangular openings of 300 or 1000 µm width. After resist removal, a buffer layer and three AlGaN layers with decreasing aluminum concentration followed by a GaN layer are grown in the openings.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure having gallium nitride layer
Materials described outside the worked examples.
silicon
Si
sapphire
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,536,616Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, the portion of the silicon nitride layer 11 which is not covered by the mesh resist layer 12 is removed to form a mesh layer 111. The mesh layer 111 …
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure having a gallium nitride layer, comprising: a substrate; a mesh layer disposed on the substrate and having a plurality of openings for exposing the substrate; a buffer layer disposed on the substrate in the openings and essentially consisting of a plurality of nitride layers; a lower aluminum gallium nitride layer, an intermediate aluminum gallium nitride layer and an upper aluminum gallium nitride layer with different aluminum concentrations in sequence formed on the buffer layer, wherein an aluminum concentration of the lower aluminum gallium nitride layer is higher than an aluminum concentration of the intermediate aluminum gallium nitride layer, the aluminum concentration of the intermediate aluminum gallium nitride layer is higher than an aluminum concentration of the upper aluminum gallium nitride layer, and the aluminum concentration of the intermediate aluminum gallium nitride layer is decreased in an upward direction from the lower aluminum gallium nitride layer; and a gallium nitride layer disposed on the upper aluminum gallium nitride layer.
The multilayer structure of claim 7, further comprising a top aluminum gallium nitride layer disposed on the gallium nitride layer.
The multilayer structure of claim 7, wherein the substrate is made of silicon, sapphire, gallium nitride, zin c oxide or silicon carbide, and the mesh layer is made of silicon nitride, and the nitride layers are selected from the group consisting of an aluminum nitride layer, a gallium nitride layer and an aluminum gallium nitride layer.
America 17066536.1 Application No. Not Yet Assigned 4 Docket No.: 87816D I V(71987) Amendment dated First Preliminary Amendment 10. The multilayer structure of claim 7, wherein the buffer layer is a high- temperature nitride layer/low-temperature nitride layer/high-temperature nitride layer, the high- temperature nitride layer is formed at 1000-1200 ° C, and the low-temperature nitride layer is formed at 700-900 °C.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
A silicon substrate (preferably Si(111)) is used. A silicon nitride (SixNy) layer of 300 nm thickness is formed on the substrate by PECVD. A mesh resist layer is patterned and the exposed silicon nitride is removed to form a mesh layer with rectangular openings of 300 or 1000 µm width. After resist removal, a buffer layer and three AlGaN layers with decreasing aluminum concentration followed by a GaN layer are grown in the openings.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure having gallium nitride layer
Materials described outside the worked examples.
silicon
Si
sapphire
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,536,616Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, the portion of the silicon nitride layer 11 which is not covered by the mesh resist layer 12 is removed to form a mesh layer 111. The mesh layer 111 …
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure having a gallium nitride layer, comprising: a substrate; a mesh layer disposed on the substrate and having a plurality of openings for exposing the substrate; a buffer layer disposed on the substrate in the openings and essentially consisting of a plurality of nitride layers; a lower aluminum gallium nitride layer, an intermediate aluminum gallium nitride layer and an upper aluminum gallium nitride layer with different aluminum concentrations in sequence formed on the buffer layer, wherein an aluminum concentration of the lower aluminum gallium nitride layer is higher than an aluminum concentration of the intermediate aluminum gallium nitride layer, the aluminum concentration of the intermediate aluminum gallium nitride layer is higher than an aluminum concentration of the upper aluminum gallium nitride layer, and the aluminum concentration of the intermediate aluminum gallium nitride layer is decreased in an upward direction from the lower aluminum gallium nitride layer; and a gallium nitride layer disposed on the upper aluminum gallium nitride layer.
The multilayer structure of claim 7, further comprising a top aluminum gallium nitride layer disposed on the gallium nitride layer.
The multilayer structure of claim 7, wherein the substrate is made of silicon, sapphire, gallium nitride, zin c oxide or silicon carbide, and the mesh layer is made of silicon nitride, and the nitride layers are selected from the group consisting of an aluminum nitride layer, a gallium nitride layer and an aluminum gallium nitride layer.
America 17066536.1 Application No. Not Yet Assigned 4 Docket No.: 87816D I V(71987) Amendment dated First Preliminary Amendment 10. The multilayer structure of claim 7, wherein the buffer layer is a high- temperature nitride layer/low-temperature nitride layer/high-temperature nitride layer, the high- temperature nitride layer is formed at 1000-1200 ° C, and the low-temperature nitride layer is formed at 700-900 °C.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
A silicon substrate (preferably Si(111)) is used. A silicon nitride (SixNy) layer of 300 nm thickness is formed on the substrate by PECVD. A mesh resist layer is patterned and the exposed silicon nitride is removed to form a mesh layer with rectangular openings of 300 or 1000 µm width. After resist removal, a buffer layer and three AlGaN layers with decreasing aluminum concentration followed by a GaN layer are grown in the openings.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure having gallium nitride layer
Materials described outside the worked examples.
silicon
Si
sapphire
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,536,616Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, the portion of the silicon nitride layer 11 which is not covered by the mesh resist layer 12 is removed to form a mesh layer 111. The mesh layer 111 …
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multilayer structure having a gallium nitride layer, comprising: a substrate; a mesh layer disposed on the substrate and having a plurality of openings for exposing the substrate; a buffer layer disposed on the substrate in the openings and essentially consisting of a plurality of nitride layers; a lower aluminum gallium nitride layer, an intermediate aluminum gallium nitride layer and an upper aluminum gallium nitride layer with different aluminum concentrations in sequence formed on the buffer layer, wherein an aluminum concentration of the lower aluminum gallium nitride layer is higher than an aluminum concentration of the intermediate aluminum gallium nitride layer, the aluminum concentration of the intermediate aluminum gallium nitride layer is higher than an aluminum concentration of the upper aluminum gallium nitride layer, and the aluminum concentration of the intermediate aluminum gallium nitride layer is decreased in an upward direction from the lower aluminum gallium nitride layer; and a gallium nitride layer disposed on the upper aluminum gallium nitride layer.
The multilayer structure of claim 7, further comprising a top aluminum gallium nitride layer disposed on the gallium nitride layer.
The multilayer structure of claim 7, wherein the substrate is made of silicon, sapphire, gallium nitride, zin c oxide or silicon carbide, and the mesh layer is made of silicon nitride, and the nitride layers are selected from the group consisting of an aluminum nitride layer, a gallium nitride layer and an aluminum gallium nitride layer.
America 17066536.1 Application No. Not Yet Assigned 4 Docket No.: 87816D I V(71987) Amendment dated First Preliminary Amendment 10. The multilayer structure of claim 7, wherein the buffer layer is a high- temperature nitride layer/low-temperature nitride layer/high-temperature nitride layer, the high- temperature nitride layer is formed at 1000-1200 ° C, and the low-temperature nitride layer is formed at 700-900 °C.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
A silicon substrate (preferably Si(111)) is used. A silicon nitride (SixNy) layer of 300 nm thickness is formed on the substrate by PECVD. A mesh resist layer is patterned and the exposed silicon nitride is removed to form a mesh layer with rectangular openings of 300 or 1000 µm width. After resist removal, a buffer layer and three AlGaN layers with decreasing aluminum concentration followed by a GaN layer are grown in the openings.
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure having gallium nitride layer
Materials described outside the worked examples.
silicon
Si
sapphire
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C |
Related documents with shared materials, methods, properties, or citations.
zinc oxide
ZnO
silicon carbide
SiC
silicon nitride mesh layer
SixNy
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
| — |
zinc oxide
ZnO
silicon carbide
SiC
silicon nitride mesh layer
SixNy
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
| — |
zinc oxide
ZnO
silicon carbide
SiC
silicon nitride mesh layer
SixNy
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
| — |
zinc oxide
ZnO
silicon carbide
SiC
silicon nitride mesh layer
SixNy
FIG. 2B are images showing the sectional view of the multilayer substrate of the present invention by scanning electron microscope and the top view of the …
| — |