Patent
US 9,337,029STRUCTURE INCLUDING GALLIUM NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING THE GALLIUM NITRIDE SUBSTRATE
Xianyu WENXU
US
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US 9,337,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
FIGS. 2A and 2B are views for describing a method of manufacturing a gallium nitride (GaN) substrate, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of manufacturing a GaN substrate, the method comprising: forming a plurality of silicon rods on an upper surface of a silicon substrate by etching the silicon substrate; forming an amorphous silicon layer on the plurality of silicon rods; changing the amorphous silicon layer to a crystalline silicon layer; and growing a GaN substrate on the crystalline silicon layer.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming gaps between the plurality of silicon rods, the gaps having a width from about 50 nm to about 500 nm.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having an aspect ratio from about 5:1 to about 20:1.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having lengths from about 2 p m to about 10 pm.
The method of claim 9, wherein the fo rm ing a plurality of silicon rods includes forming the plurality of silicon rods having widths from about 100 nm to about 1000 nm.
The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming a silicon oxide layer on an upper surface of the silicon substrate by oxidizing the silicon substrate; patterning the silicon oxide layer; performing dry etching on the silicon substrate using the patterned silicon oxide layer as a mask; and removing the patterned silicon oxide layer.
(Orig i nal) The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming silicon cores and silicon oxide shells surrounding the silicon cores by thermally oxidizing the plurality of silicon rods.
The method of claim 9, wherein the forming an amorphous silicon layer includes one of a sputtering method and an evaporation deposition method.
The method of claim 9, wherein the changing the amorphous silicon layer includes one of an ELA method and a SPC method.
The method of claim 9, wherein the growing a GaN substrate further comprises forming a buffer layer on the crystalline silicon layer.
The method of claim 9, wherein the growing a GaN substrate further comprises forming an insulation layer pattern on the crystalline silicon layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon structure
Materials described outside the worked examples.
silicon rods
Si
GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000 nm | — |
Thickness | 50–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
FIGS. 2A and 2B are views for describing a method of manufacturing a gallium nitride (GaN) substrate, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 8. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of manufacturing a GaN substrate, the method comprising: forming a plurality of silicon rods on an upper surface of a silicon substrate by etching the silicon substrate; forming an amorphous silicon layer on the plurality of silicon rods; changing the amorphous silicon layer to a crystalline silicon layer; and growing a GaN substrate on the crystalline silicon layer.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming gaps between the plurality of silicon rods, the gaps having a width from about 50 nm to about 500 nm.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having an aspect ratio from about 5:1 to about 20:1.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having lengths from about 2 p m to about 10 pm.
The method of claim 9, wherein the fo rm ing a plurality of silicon rods includes forming the plurality of silicon rods having widths from about 100 nm to about 1000 nm.
The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming a silicon oxide layer on an upper surface of the silicon substrate by oxidizing the silicon substrate; patterning the silicon oxide layer; performing dry etching on the silicon substrate using the patterned silicon oxide layer as a mask; and removing the patterned silicon oxide layer.
(Orig i nal) The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming silicon cores and silicon oxide shells surrounding the silicon cores by thermally oxidizing the plurality of silicon rods.
The method of claim 9, wherein the forming an amorphous silicon layer includes one of a sputtering method and an evaporation deposition method.
The method of claim 9, wherein the changing the amorphous silicon layer includes one of an ELA method and a SPC method.
The method of claim 9, wherein the growing a GaN substrate further comprises forming a buffer layer on the crystalline silicon layer.
The method of claim 9, wherein the growing a GaN substrate further comprises forming an insulation layer pattern on the crystalline silicon layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon structure
Materials described outside the worked examples.
silicon rods
Si
GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000 nm | — |
Thickness | 50–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
FIGS. 2A and 2B are views for describing a method of manufacturing a gallium nitride (GaN) substrate, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 8. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of manufacturing a GaN substrate, the method comprising: forming a plurality of silicon rods on an upper surface of a silicon substrate by etching the silicon substrate; forming an amorphous silicon layer on the plurality of silicon rods; changing the amorphous silicon layer to a crystalline silicon layer; and growing a GaN substrate on the crystalline silicon layer.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming gaps between the plurality of silicon rods, the gaps having a width from about 50 nm to about 500 nm.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having an aspect ratio from about 5:1 to about 20:1.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having lengths from about 2 p m to about 10 pm.
The method of claim 9, wherein the fo rm ing a plurality of silicon rods includes forming the plurality of silicon rods having widths from about 100 nm to about 1000 nm.
The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming a silicon oxide layer on an upper surface of the silicon substrate by oxidizing the silicon substrate; patterning the silicon oxide layer; performing dry etching on the silicon substrate using the patterned silicon oxide layer as a mask; and removing the patterned silicon oxide layer.
(Orig i nal) The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming silicon cores and silicon oxide shells surrounding the silicon cores by thermally oxidizing the plurality of silicon rods.
The method of claim 9, wherein the forming an amorphous silicon layer includes one of a sputtering method and an evaporation deposition method.
The method of claim 9, wherein the changing the amorphous silicon layer includes one of an ELA method and a SPC method.
The method of claim 9, wherein the growing a GaN substrate further comprises forming a buffer layer on the crystalline silicon layer.
The method of claim 9, wherein the growing a GaN substrate further comprises forming an insulation layer pattern on the crystalline silicon layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon structure
Materials described outside the worked examples.
silicon rods
Si
GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000 nm | — |
Thickness | 50–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
FIGS. 2A and 2B are views for describing a method of manufacturing a gallium nitride (GaN) substrate, according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 8. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of manufacturing a GaN substrate, the method comprising: forming a plurality of silicon rods on an upper surface of a silicon substrate by etching the silicon substrate; forming an amorphous silicon layer on the plurality of silicon rods; changing the amorphous silicon layer to a crystalline silicon layer; and growing a GaN substrate on the crystalline silicon layer.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming gaps between the plurality of silicon rods, the gaps having a width from about 50 nm to about 500 nm.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having an aspect ratio from about 5:1 to about 20:1.
The method of claim 9, wherein the forming a plurality of silicon rods includes forming the plurality of silicon rods having lengths from about 2 p m to about 10 pm.
The method of claim 9, wherein the fo rm ing a plurality of silicon rods includes forming the plurality of silicon rods having widths from about 100 nm to about 1000 nm.
The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming a silicon oxide layer on an upper surface of the silicon substrate by oxidizing the silicon substrate; patterning the silicon oxide layer; performing dry etching on the silicon substrate using the patterned silicon oxide layer as a mask; and removing the patterned silicon oxide layer.
(Orig i nal) The method of claim 9, wherein the forming a plurality of silicon rods comprises: forming silicon cores and silicon oxide shells surrounding the silicon cores by thermally oxidizing the plurality of silicon rods.
The method of claim 9, wherein the forming an amorphous silicon layer includes one of a sputtering method and an evaporation deposition method.
The method of claim 9, wherein the changing the amorphous silicon layer includes one of an ELA method and a SPC method.
The method of claim 9, wherein the growing a GaN substrate further comprises forming a buffer layer on the crystalline silicon layer.
The method of claim 9, wherein the growing a GaN substrate further comprises forming an insulation layer pattern on the crystalline silicon layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon structure
Materials described outside the worked examples.
silicon rods
Si
GaN substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, a large area silicon substrate 110 is prepared. The large area silicon substrate 110 may have a (111) surface. The 4 Atty. Dkt. No. 2557S I …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000 nm | — |
Thickness | 50–500 nm |
Related documents with shared materials, methods, properties, or citations.
silicon oxide
SiO₂
| — |
Thickness | ≥ 500 nm | — |
silicon oxide
SiO₂
| — |
Thickness | ≥ 500 nm | — |
silicon oxide
SiO₂
| — |
Thickness | ≥ 500 nm | — |
silicon oxide
SiO₂
| — |
Thickness | ≥ 500 nm | — |