Patent
US 8,465,588Ammonothermal Method for Growth of Bulk Gallium Nitride
Christiane Poblenz, James S. Speck, Derrick S. Kamber
Soraa, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 8,465,588Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified diagram of a crystalline substrate material with a first side and a second side according to an embodiment of the present invention;
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 5 is a simplified diagram illustrating reorienting a crystalline substrate material and overlying layers from a first side to a second side according to an embodiment of the present invention;
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
Figure 7 is a simplified diagram of a double-sided seed crystal which is substantially free of bow, bend or warp, illustrated post-growth and after removal of the capping layer from the first side, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating crystalline material comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material containing at least a Group III element and N having a first thickness overlying the first surface of the substrate; and forming a second layer of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same composition as the first layer of crystalline material, such that the first crystalline material and second crystalline material are substantially free from bow; wherein the first l ay er is formed by a process selected from M OCVD, H V PE, LPE, and MBE; and the second la y er is formed by a process selected from M OCVD, H V PE, LPE, an d MBE.
The A method of fabrieaing erystallinc matcrial as i claim 1 wherein the structure substantially free from bow is then used as a seed for growth.
The A method of as-i claim 1 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
The A method of a &-in claim 1 wherein the crystalline substrate comprises two separate crystalline wafers that have been bonded or fused together.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has an orientation within 10 degrees of (10-10) or (11-20), along with their associated family of planes.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has a semipolar orientation.
The method of claim 1 wherein the first layer and the second layer are within 500 microns of each other in thickness.
The method of claim 1 further comprising at least one overlying layer covering the first layer deposited on the first layer prior to forming the second layer.
3.
An epitaxial layer grown on crystalline material preduced by the methed ef elaim 1 wherein the crystalline material is fabricated by a method co m prising: 2 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of providing a crystalline substrate havin g a first surface and a second opposite surface; forming a first la y er of c r ystalline material containing at least a Gro up III element and N havin g a first thickness overlying the first surface of the substrate; and forming a second l ay er of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same co m position as the first l ay er of crystalline material, such that the first cr ystalline material and second c r ystalline material are substantially free from bow.
7.
12.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; 3 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate to form a composite substrate such that the composite substrate is configured to be substantially free from bow.
The method of claim 14 wherein the step of attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, a nd Of diffusion bonding.
The method of claim 14 wherein at least one material is disposed between the first crystalline substrate and the second crystalline substrate.
The method of claim 14 wherein the attaching uses at least one material disposed between the first c r ystalline substrate and the second c r ystalline substrate.
A method of fabricating crystalline material containing at least a Group III element and N comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material having a first thickness overlying the first surface of the crystalline substrate; and forming a second layer of crystalline material overlying the second surface of the crystalline substrate, the second la y er of crystalline material having substantially the same first 4 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of thickness and having substantially the same composition as the first layer of crystalline material overlying the first surface of the c r ystalline substrate, such that the c r ystalline substrate together with the first layer of crystalline material and the second layer of crystalline material creates a structure that is substantially free from bow.
The method of claim 18 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
A method for fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate at their second surfaces, such that the first crystalline material and second crystalline material are substantially free from bow.
The method of claim 20 wherein the attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, and ei -diffusion bonding.
The method of claim 20 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eemp ises a semipolar orientation.
The method of claim 20 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have ha s an orientation within 10 d eg rees of a (000 1) or a (000- 1) cry stall ograp hic orientation e ienftatieis.
The method of claim 20 wherein the crystalline substrate contains one or more materials selected from the group consisting ee mpfisiin g of sapphire (A₁₂₀ 3), s ilicon carbide (SiC), silicon (Si), spinel (MgAl₂ 04), LiGaO2, LiAl O 2, ZrB₂ a Group III -V material and of a Group 1I-VI material.
The method of claim 20 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method for fabricating crystalline material comprising: providing a crystalline substrate material having a first surface and a second surface; forming a first crystalline material overlying the first surface of the crystalline substrate material, the first crystalline material having a first lattice constant; and forming a second crystalline material overlying the second surface of the crystalline substrate material, the second crystalline material having a second lattice constant, such that the 6 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material.
The method of claim 29 wherein the crystalline substrate material, the first crystalline material, and the second crystalline material are substantially free from bow.
The method of claim 29 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 33 wherein the composite structure is configured to be substantially free from bow.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 170-190 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a semipolar orientation.
The method of claim 33 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have h as an orientation within 10 degrees of (0001) or (000-1) crystallographic orientations.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first lattice constant; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second lattice 8 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of constant, such that the lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 41 wherein the composite structure is configured to be substantially free from bow.
The method of claim 41 wherein a material is disposed between the first crystalline substrate material and the second crystalline substrate material.
The method of claim 41 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
45.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first coefficient of thermal expansion; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second coefficient of thermal expansion, such that the coefficient of thermal expansion of expansionef the second crystalline material is substantially the same as the coefficient of thermal expansio n of e*pansenef the first c ry stalline material; and 9 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 46 wherein the composite structure is configured to be substantially free from bow.
Materials described outside the worked examples.
first crystalline material (Group III-N)
second crystalline material (Group III-N)
sapphire
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 µm | — |
Thickness | 106–107 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 8,465,588Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified diagram of a crystalline substrate material with a first side and a second side according to an embodiment of the present invention;
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 5 is a simplified diagram illustrating reorienting a crystalline substrate material and overlying layers from a first side to a second side according to an embodiment of the present invention;
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
Figure 7 is a simplified diagram of a double-sided seed crystal which is substantially free of bow, bend or warp, illustrated post-growth and after removal of the capping layer from the first side, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating crystalline material comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material containing at least a Group III element and N having a first thickness overlying the first surface of the substrate; and forming a second layer of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same composition as the first layer of crystalline material, such that the first crystalline material and second crystalline material are substantially free from bow; wherein the first l ay er is formed by a process selected from M OCVD, H V PE, LPE, and MBE; and the second la y er is formed by a process selected from M OCVD, H V PE, LPE, an d MBE.
The A method of fabrieaing erystallinc matcrial as i claim 1 wherein the structure substantially free from bow is then used as a seed for growth.
The A method of as-i claim 1 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
The A method of a &-in claim 1 wherein the crystalline substrate comprises two separate crystalline wafers that have been bonded or fused together.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has an orientation within 10 degrees of (10-10) or (11-20), along with their associated family of planes.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has a semipolar orientation.
The method of claim 1 wherein the first layer and the second layer are within 500 microns of each other in thickness.
The method of claim 1 further comprising at least one overlying layer covering the first layer deposited on the first layer prior to forming the second layer.
3.
An epitaxial layer grown on crystalline material preduced by the methed ef elaim 1 wherein the crystalline material is fabricated by a method co m prising: 2 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of providing a crystalline substrate havin g a first surface and a second opposite surface; forming a first la y er of c r ystalline material containing at least a Gro up III element and N havin g a first thickness overlying the first surface of the substrate; and forming a second l ay er of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same co m position as the first l ay er of crystalline material, such that the first cr ystalline material and second c r ystalline material are substantially free from bow.
7.
12.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; 3 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate to form a composite substrate such that the composite substrate is configured to be substantially free from bow.
The method of claim 14 wherein the step of attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, a nd Of diffusion bonding.
The method of claim 14 wherein at least one material is disposed between the first crystalline substrate and the second crystalline substrate.
The method of claim 14 wherein the attaching uses at least one material disposed between the first c r ystalline substrate and the second c r ystalline substrate.
A method of fabricating crystalline material containing at least a Group III element and N comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material having a first thickness overlying the first surface of the crystalline substrate; and forming a second layer of crystalline material overlying the second surface of the crystalline substrate, the second la y er of crystalline material having substantially the same first 4 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of thickness and having substantially the same composition as the first layer of crystalline material overlying the first surface of the c r ystalline substrate, such that the c r ystalline substrate together with the first layer of crystalline material and the second layer of crystalline material creates a structure that is substantially free from bow.
The method of claim 18 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
A method for fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate at their second surfaces, such that the first crystalline material and second crystalline material are substantially free from bow.
The method of claim 20 wherein the attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, and ei -diffusion bonding.
The method of claim 20 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eemp ises a semipolar orientation.
The method of claim 20 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have ha s an orientation within 10 d eg rees of a (000 1) or a (000- 1) cry stall ograp hic orientation e ienftatieis.
The method of claim 20 wherein the crystalline substrate contains one or more materials selected from the group consisting ee mpfisiin g of sapphire (A₁₂₀ 3), s ilicon carbide (SiC), silicon (Si), spinel (MgAl₂ 04), LiGaO2, LiAl O 2, ZrB₂ a Group III -V material and of a Group 1I-VI material.
The method of claim 20 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method for fabricating crystalline material comprising: providing a crystalline substrate material having a first surface and a second surface; forming a first crystalline material overlying the first surface of the crystalline substrate material, the first crystalline material having a first lattice constant; and forming a second crystalline material overlying the second surface of the crystalline substrate material, the second crystalline material having a second lattice constant, such that the 6 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material.
The method of claim 29 wherein the crystalline substrate material, the first crystalline material, and the second crystalline material are substantially free from bow.
The method of claim 29 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 33 wherein the composite structure is configured to be substantially free from bow.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 170-190 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a semipolar orientation.
The method of claim 33 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have h as an orientation within 10 degrees of (0001) or (000-1) crystallographic orientations.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first lattice constant; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second lattice 8 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of constant, such that the lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 41 wherein the composite structure is configured to be substantially free from bow.
The method of claim 41 wherein a material is disposed between the first crystalline substrate material and the second crystalline substrate material.
The method of claim 41 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
45.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first coefficient of thermal expansion; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second coefficient of thermal expansion, such that the coefficient of thermal expansion of expansionef the second crystalline material is substantially the same as the coefficient of thermal expansio n of e*pansenef the first c ry stalline material; and 9 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 46 wherein the composite structure is configured to be substantially free from bow.
Materials described outside the worked examples.
first crystalline material (Group III-N)
second crystalline material (Group III-N)
sapphire
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 µm | — |
Thickness | 106–107 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 8,465,588Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified diagram of a crystalline substrate material with a first side and a second side according to an embodiment of the present invention;
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 5 is a simplified diagram illustrating reorienting a crystalline substrate material and overlying layers from a first side to a second side according to an embodiment of the present invention;
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
Figure 7 is a simplified diagram of a double-sided seed crystal which is substantially free of bow, bend or warp, illustrated post-growth and after removal of the capping layer from the first side, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating crystalline material comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material containing at least a Group III element and N having a first thickness overlying the first surface of the substrate; and forming a second layer of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same composition as the first layer of crystalline material, such that the first crystalline material and second crystalline material are substantially free from bow; wherein the first l ay er is formed by a process selected from M OCVD, H V PE, LPE, and MBE; and the second la y er is formed by a process selected from M OCVD, H V PE, LPE, an d MBE.
The A method of fabrieaing erystallinc matcrial as i claim 1 wherein the structure substantially free from bow is then used as a seed for growth.
The A method of as-i claim 1 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
The A method of a &-in claim 1 wherein the crystalline substrate comprises two separate crystalline wafers that have been bonded or fused together.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has an orientation within 10 degrees of (10-10) or (11-20), along with their associated family of planes.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has a semipolar orientation.
The method of claim 1 wherein the first layer and the second layer are within 500 microns of each other in thickness.
The method of claim 1 further comprising at least one overlying layer covering the first layer deposited on the first layer prior to forming the second layer.
3.
An epitaxial layer grown on crystalline material preduced by the methed ef elaim 1 wherein the crystalline material is fabricated by a method co m prising: 2 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of providing a crystalline substrate havin g a first surface and a second opposite surface; forming a first la y er of c r ystalline material containing at least a Gro up III element and N havin g a first thickness overlying the first surface of the substrate; and forming a second l ay er of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same co m position as the first l ay er of crystalline material, such that the first cr ystalline material and second c r ystalline material are substantially free from bow.
7.
12.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; 3 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate to form a composite substrate such that the composite substrate is configured to be substantially free from bow.
The method of claim 14 wherein the step of attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, a nd Of diffusion bonding.
The method of claim 14 wherein at least one material is disposed between the first crystalline substrate and the second crystalline substrate.
The method of claim 14 wherein the attaching uses at least one material disposed between the first c r ystalline substrate and the second c r ystalline substrate.
A method of fabricating crystalline material containing at least a Group III element and N comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material having a first thickness overlying the first surface of the crystalline substrate; and forming a second layer of crystalline material overlying the second surface of the crystalline substrate, the second la y er of crystalline material having substantially the same first 4 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of thickness and having substantially the same composition as the first layer of crystalline material overlying the first surface of the c r ystalline substrate, such that the c r ystalline substrate together with the first layer of crystalline material and the second layer of crystalline material creates a structure that is substantially free from bow.
The method of claim 18 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
A method for fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate at their second surfaces, such that the first crystalline material and second crystalline material are substantially free from bow.
The method of claim 20 wherein the attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, and ei -diffusion bonding.
The method of claim 20 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eemp ises a semipolar orientation.
The method of claim 20 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have ha s an orientation within 10 d eg rees of a (000 1) or a (000- 1) cry stall ograp hic orientation e ienftatieis.
The method of claim 20 wherein the crystalline substrate contains one or more materials selected from the group consisting ee mpfisiin g of sapphire (A₁₂₀ 3), s ilicon carbide (SiC), silicon (Si), spinel (MgAl₂ 04), LiGaO2, LiAl O 2, ZrB₂ a Group III -V material and of a Group 1I-VI material.
The method of claim 20 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method for fabricating crystalline material comprising: providing a crystalline substrate material having a first surface and a second surface; forming a first crystalline material overlying the first surface of the crystalline substrate material, the first crystalline material having a first lattice constant; and forming a second crystalline material overlying the second surface of the crystalline substrate material, the second crystalline material having a second lattice constant, such that the 6 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material.
The method of claim 29 wherein the crystalline substrate material, the first crystalline material, and the second crystalline material are substantially free from bow.
The method of claim 29 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 33 wherein the composite structure is configured to be substantially free from bow.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 170-190 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a semipolar orientation.
The method of claim 33 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have h as an orientation within 10 degrees of (0001) or (000-1) crystallographic orientations.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first lattice constant; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second lattice 8 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of constant, such that the lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 41 wherein the composite structure is configured to be substantially free from bow.
The method of claim 41 wherein a material is disposed between the first crystalline substrate material and the second crystalline substrate material.
The method of claim 41 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
45.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first coefficient of thermal expansion; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second coefficient of thermal expansion, such that the coefficient of thermal expansion of expansionef the second crystalline material is substantially the same as the coefficient of thermal expansio n of e*pansenef the first c ry stalline material; and 9 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 46 wherein the composite structure is configured to be substantially free from bow.
Materials described outside the worked examples.
first crystalline material (Group III-N)
second crystalline material (Group III-N)
sapphire
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 µm | — |
Thickness | 106–107 cm |
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US 8,465,588Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified diagram of a crystalline substrate material with a first side and a second side according to an embodiment of the present invention;
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 5 is a simplified diagram illustrating reorienting a crystalline substrate material and overlying layers from a first side to a second side according to an embodiment of the present invention;
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
Figure 7 is a simplified diagram of a double-sided seed crystal which is substantially free of bow, bend or warp, illustrated post-growth and after removal of the capping layer from the first side, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating crystalline material comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material containing at least a Group III element and N having a first thickness overlying the first surface of the substrate; and forming a second layer of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same composition as the first layer of crystalline material, such that the first crystalline material and second crystalline material are substantially free from bow; wherein the first l ay er is formed by a process selected from M OCVD, H V PE, LPE, and MBE; and the second la y er is formed by a process selected from M OCVD, H V PE, LPE, an d MBE.
The A method of fabrieaing erystallinc matcrial as i claim 1 wherein the structure substantially free from bow is then used as a seed for growth.
The A method of as-i claim 1 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
The A method of a &-in claim 1 wherein the crystalline substrate comprises two separate crystalline wafers that have been bonded or fused together.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has an orientation within 10 degrees of (10-10) or (11-20), along with their associated family of planes.
The method of claim 1 wherein the first layer of crystalline material or the second layer of crystalline material has a semipolar orientation.
The method of claim 1 wherein the first layer and the second layer are within 500 microns of each other in thickness.
The method of claim 1 further comprising at least one overlying layer covering the first layer deposited on the first layer prior to forming the second layer.
3.
An epitaxial layer grown on crystalline material preduced by the methed ef elaim 1 wherein the crystalline material is fabricated by a method co m prising: 2 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of providing a crystalline substrate havin g a first surface and a second opposite surface; forming a first la y er of c r ystalline material containing at least a Gro up III element and N havin g a first thickness overlying the first surface of the substrate; and forming a second l ay er of crystalline material overlying the second surface of the substrate, the second crystalline material having substantially the same first thickness and having substantially the same co m position as the first l ay er of crystalline material, such that the first cr ystalline material and second c r ystalline material are substantially free from bow.
7.
12.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; 3 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate to form a composite substrate such that the composite substrate is configured to be substantially free from bow.
The method of claim 14 wherein the step of attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, a nd Of diffusion bonding.
The method of claim 14 wherein at least one material is disposed between the first crystalline substrate and the second crystalline substrate.
The method of claim 14 wherein the attaching uses at least one material disposed between the first c r ystalline substrate and the second c r ystalline substrate.
A method of fabricating crystalline material containing at least a Group III element and N comprising: providing a crystalline substrate having a first surface and a second opposite surface; forming a first layer of crystalline material having a first thickness overlying the first surface of the crystalline substrate; and forming a second layer of crystalline material overlying the second surface of the crystalline substrate, the second la y er of crystalline material having substantially the same first 4 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of thickness and having substantially the same composition as the first layer of crystalline material overlying the first surface of the c r ystalline substrate, such that the c r ystalline substrate together with the first layer of crystalline material and the second layer of crystalline material creates a structure that is substantially free from bow.
The method of claim 18 wherein the first layer of crystalline material and the second layer of crystalline material are formed at the same time.
A method for fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and attaching the first crystalline substrate and the second crystalline substrate at their second surfaces, such that the first crystalline material and second crystalline material are substantially free from bow.
The method of claim 20 wherein the attaching is performed by a process selected from wafer fusion, wafer bonding, semiconductor wafer bonding, solder bonding, thermocompression bonding, eutectic bonding, and ei -diffusion bonding.
The method of claim 20 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 20 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eemp ises a semipolar orientation.
The method of claim 20 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have ha s an orientation within 10 d eg rees of a (000 1) or a (000- 1) cry stall ograp hic orientation e ienftatieis.
The method of claim 20 wherein the crystalline substrate contains one or more materials selected from the group consisting ee mpfisiin g of sapphire (A₁₂₀ 3), s ilicon carbide (SiC), silicon (Si), spinel (MgAl₂ 04), LiGaO2, LiAl O 2, ZrB₂ a Group III -V material and of a Group 1I-VI material.
The method of claim 20 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method for fabricating crystalline material comprising: providing a crystalline substrate material having a first surface and a second surface; forming a first crystalline material overlying the first surface of the crystalline substrate material, the first crystalline material having a first lattice constant; and forming a second crystalline material overlying the second surface of the crystalline substrate material, the second crystalline material having a second lattice constant, such that the 6 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material.
The method of claim 29 wherein the crystalline substrate material, the first crystalline material, and the second crystalline material are substantially free from bow.
The method of claim 29 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first thickness of first crystalline material having a first orientation; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second thickness of second crystalline material havin g a second orientation; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 33 wherein the composite structure is configured to be substantially free from bow.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 10 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material and the second orientation of the second crystalline material have an orientation within 170-190 degrees of each other.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a nonpolar orientation.
The method of claim 33 wherein the first orientation of the first crystalline material or the second orientation of the second crystalline material co m prise eem-pis es a semipolar orientation.
The method of claim 33 wherein the first orientation of the first c ry stalline material or the second orientation of the second c ry stalline material have h as an orientation within 10 degrees of (0001) or (000-1) crystallographic orientations.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first lattice constant; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second lattice 8 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of constant, such that the lattice constant of the second crystalline material is substantially the same as the lattice constant of the first crystalline material; and formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 41 wherein the composite structure is configured to be substantially free from bow.
The method of claim 41 wherein a material is disposed between the first crystalline substrate material and the second crystalline substrate material.
The method of claim 41 wherein the first crystalline material and the second crystalline material comprise a wurtzite crystal structure.
45.
A method of fabricating crystalline material comprising: providing a first crystalline substrate material having a first surface and a second surface; forming a first thickness of first crystalline material overlying the first surface of the first crystalline substrate material, the first crystalline material having a first coefficient of thermal expansion; providing a second crystalline substrate material having a first surface and a second surface; forming a second thickness of second crystalline material overlying the first surface of the second crystalline substrate material, the second crystalline material having a second coefficient of thermal expansion, such that the coefficient of thermal expansion of expansionef the second crystalline material is substantially the same as the coefficient of thermal expansio n of e*pansenef the first c ry stalline material; and 9 App l. No. 13/175,739 PATENT Am dt. dated Reply to Office Action of formi ng a co mp osite structure containi ng the first c ry stalline substrate material, the first cry stalline material, the second c ry stalline substrate material, and the second c ry stalline material such that the surface of the first crystalline material is disposed opposite e f the surface of the second crystalline material.
The method of claim 46 wherein the composite structure is configured to be substantially free from bow.
Materials described outside the worked examples.
first crystalline material (Group III-N)
second crystalline material (Group III-N)
sapphire
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is a simplified diagram illustrating a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material formed by a growth method at elevated temperature, and illustrated at elevated temperature, according to an embodiment of the present invention;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 µm | — |
Thickness | 106–107 cm |
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Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
| — |
Thickness | 0.5–500 µm | — |
Temperature | 100–800 °C | — |
Thickness | 0.5–10 µm | — |
Temperature | ≥ 1 °C | — |
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Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
| — |
Thickness | 0.5–500 µm | — |
Temperature | 100–800 °C | — |
Thickness | 0.5–10 µm | — |
Temperature | ≥ 1 °C | — |
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Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
| — |
Thickness | 0.5–500 µm | — |
Temperature | 100–800 °C | — |
Thickness | 0.5–10 µm | — |
Temperature | ≥ 1 °C | — |
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Figure 3 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, illustrated at elevated temperature, according to an embodiment of the present invention;
Figure 4 is a simplified diagram illustrating a capping layer overlying a first thickness of (Al,In)GaN containing material on a first side of a crystalline substrate material, after being cooled from elevated temperature to room temperature, according to an embodiment of the present invention. The …
Figure 6 is a simplified diagram illustrating a second thickness of (Al,In)GaN containing material deposited on a second side of a crystalline substrate material, formed by a growth method at elevated temperature and illustrated at elevated temperature, according to an embodiment of the present …
| — |
Thickness | 0.5–500 µm | — |
Temperature | 100–800 °C | — |
Thickness | 0.5–10 µm | — |
Temperature | ≥ 1 °C | — |