Patent
US 10,580,869OF T HE INVENTION
Masaya Okada
US
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Patent
Atlas literature
Patent
US 10,580,869Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A stacked body comprising: a substrate made of silicon carbide and having a first main surface forming an angle of 200 or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented to an atomic arrangement of the silicon carbide forming the substrate, in an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G' of 40 cm -1 or less under Raman spectroscopy analysis being 50 % or more, the G ' being a peak appearing near 2700 cm⁻¹ under Raman spectroscopy analysis. Previously presented
The stacked body according to claim 1, wherein the graphene film covers 80 % or more of the first main surface. Original
The stacked body according to claim 1, wherein carrier mobility in the graphene film is 1000 cm 2/Vs or more. Original
The stacked body according to claim 1, wherein the substrate has a disk shape, and the substrate has a diameter of 50 mm or more. Original
An electronic device comprising: the stacked body as recited in claim 1; a first electrode disposed on the exposed surface; and a second electrode disposed on the exposed surface and spaced from the first electrode. Original
Layer stacks claimed or described, ordered top of device to substrate.
stacked body
electronic device with graphene film
field effect transistor (FET) with graphene film
Materials described outside the worked examples.
silicon carbide
SiC
graphene film
Measurements and analyses referenced in the patent, with their drawing references.
durability against laser, and the laser intensity on a sample can be set to several mW to several tens of mW. Therefore, spectrum data per point can be acquired in a short time, and measurements of the 500 points can be taken within an acceptable time. 20 The
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
G' FWHM threshold for high-mobility graphene region | 40 cm⁻¹ | graphene film |
carrier mobility in graphene film (claimed minimum) | 1000 cm²/Vs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,580,869Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A stacked body comprising: a substrate made of silicon carbide and having a first main surface forming an angle of 200 or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented to an atomic arrangement of the silicon carbide forming the substrate, in an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G' of 40 cm -1 or less under Raman spectroscopy analysis being 50 % or more, the G ' being a peak appearing near 2700 cm⁻¹ under Raman spectroscopy analysis. Previously presented
The stacked body according to claim 1, wherein the graphene film covers 80 % or more of the first main surface. Original
The stacked body according to claim 1, wherein carrier mobility in the graphene film is 1000 cm 2/Vs or more. Original
The stacked body according to claim 1, wherein the substrate has a disk shape, and the substrate has a diameter of 50 mm or more. Original
An electronic device comprising: the stacked body as recited in claim 1; a first electrode disposed on the exposed surface; and a second electrode disposed on the exposed surface and spaced from the first electrode. Original
Layer stacks claimed or described, ordered top of device to substrate.
stacked body
electronic device with graphene film
field effect transistor (FET) with graphene film
Materials described outside the worked examples.
silicon carbide
SiC
graphene film
Measurements and analyses referenced in the patent, with their drawing references.
durability against laser, and the laser intensity on a sample can be set to several mW to several tens of mW. Therefore, spectrum data per point can be acquired in a short time, and measurements of the 500 points can be taken within an acceptable time. 20 The
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
G' FWHM threshold for high-mobility graphene region | 40 cm⁻¹ | graphene film |
carrier mobility in graphene film (claimed minimum) | 1000 cm²/Vs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,580,869Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A stacked body comprising: a substrate made of silicon carbide and having a first main surface forming an angle of 200 or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented to an atomic arrangement of the silicon carbide forming the substrate, in an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G' of 40 cm -1 or less under Raman spectroscopy analysis being 50 % or more, the G ' being a peak appearing near 2700 cm⁻¹ under Raman spectroscopy analysis. Previously presented
The stacked body according to claim 1, wherein the graphene film covers 80 % or more of the first main surface. Original
The stacked body according to claim 1, wherein carrier mobility in the graphene film is 1000 cm 2/Vs or more. Original
The stacked body according to claim 1, wherein the substrate has a disk shape, and the substrate has a diameter of 50 mm or more. Original
An electronic device comprising: the stacked body as recited in claim 1; a first electrode disposed on the exposed surface; and a second electrode disposed on the exposed surface and spaced from the first electrode. Original
Layer stacks claimed or described, ordered top of device to substrate.
stacked body
electronic device with graphene film
field effect transistor (FET) with graphene film
Materials described outside the worked examples.
silicon carbide
SiC
graphene film
Measurements and analyses referenced in the patent, with their drawing references.
durability against laser, and the laser intensity on a sample can be set to several mW to several tens of mW. Therefore, spectrum data per point can be acquired in a short time, and measurements of the 500 points can be taken within an acceptable time. 20 The
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
G' FWHM threshold for high-mobility graphene region | 40 cm⁻¹ | graphene film |
carrier mobility in graphene film (claimed minimum) | 1000 cm²/Vs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,580,869Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A stacked body comprising: a substrate made of silicon carbide and having a first main surface forming an angle of 200 or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented to an atomic arrangement of the silicon carbide forming the substrate, in an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G' of 40 cm -1 or less under Raman spectroscopy analysis being 50 % or more, the G ' being a peak appearing near 2700 cm⁻¹ under Raman spectroscopy analysis. Previously presented
The stacked body according to claim 1, wherein the graphene film covers 80 % or more of the first main surface. Original
The stacked body according to claim 1, wherein carrier mobility in the graphene film is 1000 cm 2/Vs or more. Original
The stacked body according to claim 1, wherein the substrate has a disk shape, and the substrate has a diameter of 50 mm or more. Original
An electronic device comprising: the stacked body as recited in claim 1; a first electrode disposed on the exposed surface; and a second electrode disposed on the exposed surface and spaced from the first electrode. Original
Layer stacks claimed or described, ordered top of device to substrate.
stacked body
electronic device with graphene film
field effect transistor (FET) with graphene film
Materials described outside the worked examples.
silicon carbide
SiC
graphene film
Measurements and analyses referenced in the patent, with their drawing references.
durability against laser, and the laser intensity on a sample can be set to several mW to several tens of mW. Therefore, spectrum data per point can be acquired in a short time, and measurements of the 500 points can be taken within an acceptable time. 20 The
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
G' FWHM threshold for high-mobility graphene region | 40 cm⁻¹ | graphene film |
carrier mobility in graphene film (claimed minimum) | 1000 cm²/Vs |
Related documents with shared materials, methods, properties, or citations.
graphene film |
carrier mobility in graphene film (preferred minimum per description) | 2500 cm²/Vs | graphene film |
G' Raman peak position | 2700 cm⁻¹ | graphene film |
graphene film |
carrier mobility in graphene film (preferred minimum per description) | 2500 cm²/Vs | graphene film |
G' Raman peak position | 2700 cm⁻¹ | graphene film |
graphene film |
carrier mobility in graphene film (preferred minimum per description) | 2500 cm²/Vs | graphene film |
G' Raman peak position | 2700 cm⁻¹ | graphene film |
graphene film |
carrier mobility in graphene film (preferred minimum per description) | 2500 cm²/Vs | graphene film |
G' Raman peak position | 2700 cm⁻¹ | graphene film |