Patent
US 10,192,979VACUUM TRANSISTOR STRUCTURE USING GRAPHENE EDGE FIELD EMITTER AND SCREEN ELECTRODE
Jonathan L. Shaw
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,192,979Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate having a dielectric surface; a gate electrode on the substrate; a drain electrode on the substrate; and a source electrode adjacent to the gate electrode comprising: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the edge is vertically displaced from the substrate and the gate electrode; and wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The device of claim 1, wherein the edge comprises graphene. Original
The device of claim 1, wherein the edge is parallel to the substrate. Original
The device of claim 1, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Original
The device of claim 1, further comprising: a field plate electrode on the substrate; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Original
The device of claim 1, further comprising: a dielectric material between the source electrode and the gate electrode. Original
The device of claim 1, wherein the dielectric surface comprises diamond, aluminum nitride, or silicon carbide. Original
The device of claim 1, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Original
The device of claim 1, further comprising: an enclosure sealing the source electrode, the gate electrode, and the drain electrode in a vacuum. Original
The device of claim, 9 wherein the dielectric material comprises diamond. Original
(withdrawn-currently amended) A method of fabricating a device comprising: providing a substrate having a dielectric surface; depositing a gate electrode material, a dielectric material, and a source electrode material onto the substrate to form a stack; etching away a portion of the stack to form a gate electrode and a source electrode; wherein the source electrode comprises: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the edge is vertically displaced from the substrate and the gate electrode; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The method of claim 18, wherein depositing the source electrode material comprises: depositing the two-dimensional material. Withdrawn
The method of claim 18, wherein depositing the source electrode material comprises: depositing a metal layer; and growing a two-dimensional material on the metal layer to form the edge. Withdrawn
The method of claim 18, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Withdrawn
The method of claim 18, further comprising: depositing a field plate electrode material on the substrate or the gate electrode to form a field plate electrode; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing a dielectric material between the source electrode and the gate electrode as part of the stack. Withdrawn
The method of claim 18, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing conductive leads electrically connected to the source electrode, the gate electrode, and the drain electrode. Withdrawn
A method of fabricating a device comprising: providing a substrate having an optically flat and smooth dielectric surface; patterning a conducting layer to form a source electrode contact, a gate electrode, optionally a field plate electrode, and a drain electrode; depositing one or more layers of sacrificial materials; depositing a conductive two-dimensional material over the sacrificial layers; depositing a protective layer over the two-dimensional material; depositing a metal onto selected areas of the two-dimensional material by: patterning a photoresist; removing the protective layer; depositing the metal; removing unwanted portions of the two-dimensional material; removing any remaining photoresist; removing the exposed sacrificial material not covered by the metal or the two- dimensional material by exposure to a vapor-phase etch; wherein removing the exposed sacrificial layer undercuts the two-dimensional material at least 100 nm from the edge; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the edge is laterally between the gate electrode and the drain electrode; wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight from the edge to the drain electrode. Withdrawn
The method of claim 33, wherein the substrate onto the sacrificial layer. Withdrawn
The method of claim 33, wherein the sacrificial layer by seeding the sacrificial layer with phase carbon and hydrogen atoms at a temperature
The method of claim 33, wherein the growing additional two-dimensional material after Withdrawn two-dimensional material is transferred from a separate two-dimensional material is grown on top of the a Pt group metal followed by exposure to gas between 500 0 C and 1000 0 C. Withdrawn two-dimensional material is replaced or augmented by removing the exposed sacrificial material.
Layer stacks claimed or described, ordered top of device to substrate.
vacuum field-effect transistor with two-dimensional material edge field emitter
Materials described outside the worked examples.
conductive two-dimensional material
graphene
Measurements and analyses referenced in the patent, with their drawing references.
durability of the emitter is reduced by excessive temperature, the reduced crossover temperature should increase the durability of the emitter. c) For a given current density, the electric field immediately adjacent to the graphene edge is larger than would be
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron transit time | 1 ps | — |
maximum source-drain voltage | 1000 V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,192,979Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate having a dielectric surface; a gate electrode on the substrate; a drain electrode on the substrate; and a source electrode adjacent to the gate electrode comprising: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the edge is vertically displaced from the substrate and the gate electrode; and wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The device of claim 1, wherein the edge comprises graphene. Original
The device of claim 1, wherein the edge is parallel to the substrate. Original
The device of claim 1, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Original
The device of claim 1, further comprising: a field plate electrode on the substrate; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Original
The device of claim 1, further comprising: a dielectric material between the source electrode and the gate electrode. Original
The device of claim 1, wherein the dielectric surface comprises diamond, aluminum nitride, or silicon carbide. Original
The device of claim 1, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Original
The device of claim 1, further comprising: an enclosure sealing the source electrode, the gate electrode, and the drain electrode in a vacuum. Original
The device of claim, 9 wherein the dielectric material comprises diamond. Original
(withdrawn-currently amended) A method of fabricating a device comprising: providing a substrate having a dielectric surface; depositing a gate electrode material, a dielectric material, and a source electrode material onto the substrate to form a stack; etching away a portion of the stack to form a gate electrode and a source electrode; wherein the source electrode comprises: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the edge is vertically displaced from the substrate and the gate electrode; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The method of claim 18, wherein depositing the source electrode material comprises: depositing the two-dimensional material. Withdrawn
The method of claim 18, wherein depositing the source electrode material comprises: depositing a metal layer; and growing a two-dimensional material on the metal layer to form the edge. Withdrawn
The method of claim 18, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Withdrawn
The method of claim 18, further comprising: depositing a field plate electrode material on the substrate or the gate electrode to form a field plate electrode; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing a dielectric material between the source electrode and the gate electrode as part of the stack. Withdrawn
The method of claim 18, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing conductive leads electrically connected to the source electrode, the gate electrode, and the drain electrode. Withdrawn
A method of fabricating a device comprising: providing a substrate having an optically flat and smooth dielectric surface; patterning a conducting layer to form a source electrode contact, a gate electrode, optionally a field plate electrode, and a drain electrode; depositing one or more layers of sacrificial materials; depositing a conductive two-dimensional material over the sacrificial layers; depositing a protective layer over the two-dimensional material; depositing a metal onto selected areas of the two-dimensional material by: patterning a photoresist; removing the protective layer; depositing the metal; removing unwanted portions of the two-dimensional material; removing any remaining photoresist; removing the exposed sacrificial material not covered by the metal or the two- dimensional material by exposure to a vapor-phase etch; wherein removing the exposed sacrificial layer undercuts the two-dimensional material at least 100 nm from the edge; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the edge is laterally between the gate electrode and the drain electrode; wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight from the edge to the drain electrode. Withdrawn
The method of claim 33, wherein the substrate onto the sacrificial layer. Withdrawn
The method of claim 33, wherein the sacrificial layer by seeding the sacrificial layer with phase carbon and hydrogen atoms at a temperature
The method of claim 33, wherein the growing additional two-dimensional material after Withdrawn two-dimensional material is transferred from a separate two-dimensional material is grown on top of the a Pt group metal followed by exposure to gas between 500 0 C and 1000 0 C. Withdrawn two-dimensional material is replaced or augmented by removing the exposed sacrificial material.
Layer stacks claimed or described, ordered top of device to substrate.
vacuum field-effect transistor with two-dimensional material edge field emitter
Materials described outside the worked examples.
conductive two-dimensional material
graphene
Measurements and analyses referenced in the patent, with their drawing references.
durability of the emitter is reduced by excessive temperature, the reduced crossover temperature should increase the durability of the emitter. c) For a given current density, the electric field immediately adjacent to the graphene edge is larger than would be
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron transit time | 1 ps | — |
maximum source-drain voltage | 1000 V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,192,979Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate having a dielectric surface; a gate electrode on the substrate; a drain electrode on the substrate; and a source electrode adjacent to the gate electrode comprising: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the edge is vertically displaced from the substrate and the gate electrode; and wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The device of claim 1, wherein the edge comprises graphene. Original
The device of claim 1, wherein the edge is parallel to the substrate. Original
The device of claim 1, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Original
The device of claim 1, further comprising: a field plate electrode on the substrate; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Original
The device of claim 1, further comprising: a dielectric material between the source electrode and the gate electrode. Original
The device of claim 1, wherein the dielectric surface comprises diamond, aluminum nitride, or silicon carbide. Original
The device of claim 1, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Original
The device of claim 1, further comprising: an enclosure sealing the source electrode, the gate electrode, and the drain electrode in a vacuum. Original
The device of claim, 9 wherein the dielectric material comprises diamond. Original
(withdrawn-currently amended) A method of fabricating a device comprising: providing a substrate having a dielectric surface; depositing a gate electrode material, a dielectric material, and a source electrode material onto the substrate to form a stack; etching away a portion of the stack to form a gate electrode and a source electrode; wherein the source electrode comprises: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the edge is vertically displaced from the substrate and the gate electrode; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The method of claim 18, wherein depositing the source electrode material comprises: depositing the two-dimensional material. Withdrawn
The method of claim 18, wherein depositing the source electrode material comprises: depositing a metal layer; and growing a two-dimensional material on the metal layer to form the edge. Withdrawn
The method of claim 18, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Withdrawn
The method of claim 18, further comprising: depositing a field plate electrode material on the substrate or the gate electrode to form a field plate electrode; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing a dielectric material between the source electrode and the gate electrode as part of the stack. Withdrawn
The method of claim 18, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing conductive leads electrically connected to the source electrode, the gate electrode, and the drain electrode. Withdrawn
A method of fabricating a device comprising: providing a substrate having an optically flat and smooth dielectric surface; patterning a conducting layer to form a source electrode contact, a gate electrode, optionally a field plate electrode, and a drain electrode; depositing one or more layers of sacrificial materials; depositing a conductive two-dimensional material over the sacrificial layers; depositing a protective layer over the two-dimensional material; depositing a metal onto selected areas of the two-dimensional material by: patterning a photoresist; removing the protective layer; depositing the metal; removing unwanted portions of the two-dimensional material; removing any remaining photoresist; removing the exposed sacrificial material not covered by the metal or the two- dimensional material by exposure to a vapor-phase etch; wherein removing the exposed sacrificial layer undercuts the two-dimensional material at least 100 nm from the edge; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the edge is laterally between the gate electrode and the drain electrode; wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight from the edge to the drain electrode. Withdrawn
The method of claim 33, wherein the substrate onto the sacrificial layer. Withdrawn
The method of claim 33, wherein the sacrificial layer by seeding the sacrificial layer with phase carbon and hydrogen atoms at a temperature
The method of claim 33, wherein the growing additional two-dimensional material after Withdrawn two-dimensional material is transferred from a separate two-dimensional material is grown on top of the a Pt group metal followed by exposure to gas between 500 0 C and 1000 0 C. Withdrawn two-dimensional material is replaced or augmented by removing the exposed sacrificial material.
Layer stacks claimed or described, ordered top of device to substrate.
vacuum field-effect transistor with two-dimensional material edge field emitter
Materials described outside the worked examples.
conductive two-dimensional material
graphene
Measurements and analyses referenced in the patent, with their drawing references.
durability of the emitter is reduced by excessive temperature, the reduced crossover temperature should increase the durability of the emitter. c) For a given current density, the electric field immediately adjacent to the graphene edge is larger than would be
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron transit time | 1 ps | — |
maximum source-drain voltage | 1000 V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,192,979Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate having a dielectric surface; a gate electrode on the substrate; a drain electrode on the substrate; and a source electrode adjacent to the gate electrode comprising: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the edge is vertically displaced from the substrate and the gate electrode; and wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The device of claim 1, wherein the edge comprises graphene. Original
The device of claim 1, wherein the edge is parallel to the substrate. Original
The device of claim 1, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Original
The device of claim 1, further comprising: a field plate electrode on the substrate; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Original
The device of claim 1, further comprising: a dielectric material between the source electrode and the gate electrode. Original
The device of claim 1, wherein the dielectric surface comprises diamond, aluminum nitride, or silicon carbide. Original
The device of claim 1, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Original
The device of claim 1, further comprising: an enclosure sealing the source electrode, the gate electrode, and the drain electrode in a vacuum. Original
The device of claim, 9 wherein the dielectric material comprises diamond. Original
(withdrawn-currently amended) A method of fabricating a device comprising: providing a substrate having a dielectric surface; depositing a gate electrode material, a dielectric material, and a source electrode material onto the substrate to form a stack; etching away a portion of the stack to form a gate electrode and a source electrode; wherein the source electrode comprises: a conductive contact; and an edge comprising a conductive two-dimensional material in electrical contact with the conductive contact; wherein the edge is vertically displaced from the substrate and the gate electrode; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the drain electrode is not laterally between the edge and the gate electrode; wherein the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge;wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight or electron path from the edge, through a gas or vacuum, and to the drain electrode. Currently amended
The method of claim 18, wherein depositing the source electrode material comprises: depositing the two-dimensional material. Withdrawn
The method of claim 18, wherein depositing the source electrode material comprises: depositing a metal layer; and growing a two-dimensional material on the metal layer to form the edge. Withdrawn
The method of claim 18, wherein the gate electrode comprises: a first gate electrode portion vertically displaced above the edge; and a second gate electrode portion vertically displaced below the edge. Withdrawn
The method of claim 18, further comprising: depositing a field plate electrode material on the substrate or the gate electrode to form a field plate electrode; wherein the field plate electrode is not in electrical contact with the gate electrode, the drain electrode, and the source electrode; and wherein the field plate electrode comprises a portion that is laterally between the gate electrode and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing a dielectric material between the source electrode and the gate electrode as part of the stack. Withdrawn
The method of claim 18, wherein the device comprises more than one set of the gate electrode, the source electrode, and the drain electrode. Withdrawn
The method of claim 18, further comprising: depositing conductive leads electrically connected to the source electrode, the gate electrode, and the drain electrode. Withdrawn
A method of fabricating a device comprising: providing a substrate having an optically flat and smooth dielectric surface; patterning a conducting layer to form a source electrode contact, a gate electrode, optionally a field plate electrode, and a drain electrode; depositing one or more layers of sacrificial materials; depositing a conductive two-dimensional material over the sacrificial layers; depositing a protective layer over the two-dimensional material; depositing a metal onto selected areas of the two-dimensional material by: patterning a photoresist; removing the protective layer; depositing the metal; removing unwanted portions of the two-dimensional material; removing any remaining photoresist; removing the exposed sacrificial material not covered by the metal or the two- dimensional material by exposure to a vapor-phase etch; wherein removing the exposed sacrificial layer undercuts the two-dimensional material at least 100 nm from the edge; and depositing a drain electrode material onto the substrate to form a drain electrode; wherein the edge is laterally between the gate electrode and the drain electrode; wherein the gate electrode, the drain electrode, and the source electrode are not in electrical contact with each other; and wherein the device is configured to provide a line of sight from the edge to the drain electrode. Withdrawn
The method of claim 33, wherein the substrate onto the sacrificial layer. Withdrawn
The method of claim 33, wherein the sacrificial layer by seeding the sacrificial layer with phase carbon and hydrogen atoms at a temperature
The method of claim 33, wherein the growing additional two-dimensional material after Withdrawn two-dimensional material is transferred from a separate two-dimensional material is grown on top of the a Pt group metal followed by exposure to gas between 500 0 C and 1000 0 C. Withdrawn two-dimensional material is replaced or augmented by removing the exposed sacrificial material.
Layer stacks claimed or described, ordered top of device to substrate.
vacuum field-effect transistor with two-dimensional material edge field emitter
Materials described outside the worked examples.
conductive two-dimensional material
graphene
Measurements and analyses referenced in the patent, with their drawing references.
durability of the emitter is reduced by excessive temperature, the reduced crossover temperature should increase the durability of the emitter. c) For a given current density, the electric field immediately adjacent to the graphene edge is larger than would be
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron transit time | 1 ps | — |
maximum source-drain voltage | 1000 V |
Related documents with shared materials, methods, properties, or citations.
diamond
aluminum nitride
AlN
silicon carbide
SiC
| — |
gate resistance | 0.5 ohms | — |
Temperature | 800–1200 K | — |
Pressure | 1e-8 Torr | — |
Thickness | 100–1000 nm | — |
Thickness | 1–10 µm | — |
Thickness | ≥ 1 nm | — |
diamond
aluminum nitride
AlN
silicon carbide
SiC
| — |
gate resistance | 0.5 ohms | — |
Temperature | 800–1200 K | — |
Pressure | 1e-8 Torr | — |
Thickness | 100–1000 nm | — |
Thickness | 1–10 µm | — |
Thickness | ≥ 1 nm | — |
diamond
aluminum nitride
AlN
silicon carbide
SiC
| — |
gate resistance | 0.5 ohms | — |
Temperature | 800–1200 K | — |
Pressure | 1e-8 Torr | — |
Thickness | 100–1000 nm | — |
Thickness | 1–10 µm | — |
Thickness | ≥ 1 nm | — |
diamond
aluminum nitride
AlN
silicon carbide
SiC
| — |
gate resistance | 0.5 ohms | — |
Temperature | 800–1200 K | — |
Pressure | 1e-8 Torr | — |
Thickness | 100–1000 nm | — |
Thickness | 1–10 µm | — |
Thickness | ≥ 1 nm | — |