Patent
US 9,166,062FIELD EFFECT TRANSISTOR USING GRAPHENE
Jae-ho LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,166,062Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
FIG. 9 is a sectional view of a field effect device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor comprising: a substrate; a graphene channel layer on the substrate, the graphene channel layer defining a slit; a source electrode and a drain electrode spaced apart from each other, the source electrode and the drain electrode being configured to apply voltages to the graphene channel layer; a gate electrode on the graphene channel layer; and a gate insulation layer between the graphene channel layer and the gate electrode.
The field effect transistor of claim 1, further comprising: a potential barrier material filling the slit of the graphene channel layer, wherein the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein a width of the slit allows F- N tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein the graphene channel layer defines a plurality of the slits.
The field effect transistor of claim 1, wherein the gate electrode is closer to the slit of the graphene channel layer than at least one of the source electrode and the drain electrode.
Divisional of U.S. Application No. 13/772,693 Att y. Dkt. No. 2557 SI -001899-US-DVA
Divisional of U.S. Application No. 13/772,693 Atty. Dkt. No. 2557S I -001899-US-DVA
The field effect transistor of claim 15, wherein the gate electrode is between the source electrode and the drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor using graphene
Materials described outside the worked examples.
graphene
C
potential barrier material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,166,062Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
FIG. 9 is a sectional view of a field effect device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor comprising: a substrate; a graphene channel layer on the substrate, the graphene channel layer defining a slit; a source electrode and a drain electrode spaced apart from each other, the source electrode and the drain electrode being configured to apply voltages to the graphene channel layer; a gate electrode on the graphene channel layer; and a gate insulation layer between the graphene channel layer and the gate electrode.
The field effect transistor of claim 1, further comprising: a potential barrier material filling the slit of the graphene channel layer, wherein the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein a width of the slit allows F- N tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein the graphene channel layer defines a plurality of the slits.
The field effect transistor of claim 1, wherein the gate electrode is closer to the slit of the graphene channel layer than at least one of the source electrode and the drain electrode.
Divisional of U.S. Application No. 13/772,693 Att y. Dkt. No. 2557 SI -001899-US-DVA
Divisional of U.S. Application No. 13/772,693 Atty. Dkt. No. 2557S I -001899-US-DVA
The field effect transistor of claim 15, wherein the gate electrode is between the source electrode and the drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor using graphene
Materials described outside the worked examples.
graphene
C
potential barrier material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,166,062Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
FIG. 9 is a sectional view of a field effect device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor comprising: a substrate; a graphene channel layer on the substrate, the graphene channel layer defining a slit; a source electrode and a drain electrode spaced apart from each other, the source electrode and the drain electrode being configured to apply voltages to the graphene channel layer; a gate electrode on the graphene channel layer; and a gate insulation layer between the graphene channel layer and the gate electrode.
The field effect transistor of claim 1, further comprising: a potential barrier material filling the slit of the graphene channel layer, wherein the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein a width of the slit allows F- N tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein the graphene channel layer defines a plurality of the slits.
The field effect transistor of claim 1, wherein the gate electrode is closer to the slit of the graphene channel layer than at least one of the source electrode and the drain electrode.
Divisional of U.S. Application No. 13/772,693 Att y. Dkt. No. 2557 SI -001899-US-DVA
Divisional of U.S. Application No. 13/772,693 Atty. Dkt. No. 2557S I -001899-US-DVA
The field effect transistor of claim 15, wherein the gate electrode is between the source electrode and the drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor using graphene
Materials described outside the worked examples.
graphene
C
potential barrier material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,166,062Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
FIG. 9 is a sectional view of a field effect device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor comprising: a substrate; a graphene channel layer on the substrate, the graphene channel layer defining a slit; a source electrode and a drain electrode spaced apart from each other, the source electrode and the drain electrode being configured to apply voltages to the graphene channel layer; a gate electrode on the graphene channel layer; and a gate insulation layer between the graphene channel layer and the gate electrode.
The field effect transistor of claim 1, further comprising: a potential barrier material filling the slit of the graphene channel layer, wherein the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein a width of the slit allows F- N tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode.
The field effect transistor of claim 1, wherein the graphene channel layer defines a plurality of the slits.
The field effect transistor of claim 1, wherein the gate electrode is closer to the slit of the graphene channel layer than at least one of the source electrode and the drain electrode.
Divisional of U.S. Application No. 13/772,693 Att y. Dkt. No. 2557 SI -001899-US-DVA
Divisional of U.S. Application No. 13/772,693 Atty. Dkt. No. 2557S I -001899-US-DVA
The field effect transistor of claim 15, wherein the gate electrode is between the source electrode and the drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor using graphene
Materials described outside the worked examples.
graphene
C
potential barrier material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, in the energy band structure of graphene, a conduction band and a valance band meet each other at each of valleys of Brillouin zone having a …
Related documents with shared materials, methods, properties, or citations.
undoped silicon
Si
gate insulation layer material
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
undoped silicon
Si
gate insulation layer material
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
undoped silicon
Si
gate insulation layer material
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]
undoped silicon
Si
gate insulation layer material
FIG. 2. The initial Fermi potential of the graphene channel layer 230 is E 0. [0073]
FIGS. 3A through 3C are energy band diagrams for describing an operation mechanism of the field effect transistor of F I G. 2; 4 SVG …
FIG. 4 is a sectional view of a field effect transistor including a graphene channel layer, according to example embodiments; [0035]
FIGS. 5A, 5B, and 5C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0036]
FIGS. 6A, 6B, and 6C are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0037]
FIGS. 7A to 7D are sectional views of field effect transistors including a graphene channel layer, according to example embodiments; [0038]
FIG. 8 is a sectional view of a field effect transistor including a plurality of graphene channel layers, according to example embodiments; and [0039]