Patent
US 8,247,806FIELD EFFECT TRANSISTOR HAVING GRAPHENE CHANNEL LAYER
Byung-Gyu CHAE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,247,806Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor, c, the field effe c t transistr comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1-ayer- la y er, wherein the interla y er comprises an insulation layer.
The field effect transistor of claim 1, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 1, wherein the second electrode overlaps with the graphene channel layer and the interlayer [[130]] is interposed therebetween.
The field effect transistor of claim 1, wherein the second electrode covers the interlayer either completely or partially. pamally AMENDMENT 12/649,321 -2- 6. The field effect transistor of claim 1, wherein a thickness of the interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 1, wherein each of the first electrode and the second electrode is either a source electrode or a drain electrode.
canceled
A field effect transistor, c, the field effect transisto comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on a portion of the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, the interlayer, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1aye- la y er, wherein the second electrode is spaced apart from the graphene channel layer by an interlayer that is interposed therebetween, and the second electrode and the graphene channel la y er do not overlap.
The field effect transistor of claim 8, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein the interlayer comprises a semiconductor having a band gap of a size with which a field effect occurs due to a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein a thickness interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 8, wherein the interlayer comprises semiconductor graphene or graphene oxide.
The field effect transistor of claim 8, wherein the interlayer has a first portion and a second portion, wherein the first portion of the interlayer is interposed between the first electrode and the graphene channel layer, wherein the second portion of the interlayer is interposed between the second electrode and the graphene channel layer.
canceled
Claims 14-18. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with overlapping second electrode and interlayer insulation layer
field-effect transistor with non-overlapping second electrode and interlayer
Materials described outside the worked examples.
graphene
insulation layer (interlayer)
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,806Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor, c, the field effe c t transistr comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1-ayer- la y er, wherein the interla y er comprises an insulation layer.
The field effect transistor of claim 1, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 1, wherein the second electrode overlaps with the graphene channel layer and the interlayer [[130]] is interposed therebetween.
The field effect transistor of claim 1, wherein the second electrode covers the interlayer either completely or partially. pamally AMENDMENT 12/649,321 -2- 6. The field effect transistor of claim 1, wherein a thickness of the interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 1, wherein each of the first electrode and the second electrode is either a source electrode or a drain electrode.
canceled
A field effect transistor, c, the field effect transisto comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on a portion of the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, the interlayer, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1aye- la y er, wherein the second electrode is spaced apart from the graphene channel layer by an interlayer that is interposed therebetween, and the second electrode and the graphene channel la y er do not overlap.
The field effect transistor of claim 8, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein the interlayer comprises a semiconductor having a band gap of a size with which a field effect occurs due to a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein a thickness interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 8, wherein the interlayer comprises semiconductor graphene or graphene oxide.
The field effect transistor of claim 8, wherein the interlayer has a first portion and a second portion, wherein the first portion of the interlayer is interposed between the first electrode and the graphene channel layer, wherein the second portion of the interlayer is interposed between the second electrode and the graphene channel layer.
canceled
Claims 14-18. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with overlapping second electrode and interlayer insulation layer
field-effect transistor with non-overlapping second electrode and interlayer
Materials described outside the worked examples.
graphene
insulation layer (interlayer)
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,806Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor, c, the field effe c t transistr comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1-ayer- la y er, wherein the interla y er comprises an insulation layer.
The field effect transistor of claim 1, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 1, wherein the second electrode overlaps with the graphene channel layer and the interlayer [[130]] is interposed therebetween.
The field effect transistor of claim 1, wherein the second electrode covers the interlayer either completely or partially. pamally AMENDMENT 12/649,321 -2- 6. The field effect transistor of claim 1, wherein a thickness of the interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 1, wherein each of the first electrode and the second electrode is either a source electrode or a drain electrode.
canceled
A field effect transistor, c, the field effect transisto comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on a portion of the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, the interlayer, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1aye- la y er, wherein the second electrode is spaced apart from the graphene channel layer by an interlayer that is interposed therebetween, and the second electrode and the graphene channel la y er do not overlap.
The field effect transistor of claim 8, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein the interlayer comprises a semiconductor having a band gap of a size with which a field effect occurs due to a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein a thickness interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 8, wherein the interlayer comprises semiconductor graphene or graphene oxide.
The field effect transistor of claim 8, wherein the interlayer has a first portion and a second portion, wherein the first portion of the interlayer is interposed between the first electrode and the graphene channel layer, wherein the second portion of the interlayer is interposed between the second electrode and the graphene channel layer.
canceled
Claims 14-18. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with overlapping second electrode and interlayer insulation layer
field-effect transistor with non-overlapping second electrode and interlayer
Materials described outside the worked examples.
graphene
insulation layer (interlayer)
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,806Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A field effect transistor, c, the field effe c t transistr comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1-ayer- la y er, wherein the interla y er comprises an insulation layer.
The field effect transistor of claim 1, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 1, wherein the second electrode overlaps with the graphene channel layer and the interlayer [[130]] is interposed therebetween.
The field effect transistor of claim 1, wherein the second electrode covers the interlayer either completely or partially. pamally AMENDMENT 12/649,321 -2- 6. The field effect transistor of claim 1, wherein a thickness of the interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 1, wherein each of the first electrode and the second electrode is either a source electrode or a drain electrode.
canceled
A field effect transistor, c, the field effect transisto comprising: a substrate; [[the]] a graphene channel layer which is disposed on a portion of the substrate and comprises graphene; a first electrode disposed on a first region of the graphene channel layer and on a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is spaced apart from the first region, and on a portion of the substrate; a second electrode disposed on a portion of the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, the interlayer, and the second electrode; and a gate electrode disposed on a portion of the gate insulation 1aye- la y er, wherein the second electrode is spaced apart from the graphene channel layer by an interlayer that is interposed therebetween, and the second electrode and the graphene channel la y er do not overlap.
The field effect transistor of claim 8, wherein the graphene is semi-metal graphene having no band gap and the level of the Fermi surface changes by a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein the interlayer comprises a semiconductor having a band gap of a size with which a field effect occurs due to a voltage applied to the gate electrode.
The field effect transistor of claim 8, wherein a thickness interlayer is sufficient to cause a tunnelling effect between the graphene channel layer and the second electrode.
The field effect transistor of claim 8, wherein the interlayer comprises semiconductor graphene or graphene oxide.
The field effect transistor of claim 8, wherein the interlayer has a first portion and a second portion, wherein the first portion of the interlayer is interposed between the first electrode and the graphene channel layer, wherein the second portion of the interlayer is interposed between the second electrode and the graphene channel layer.
canceled
Claims 14-18. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with overlapping second electrode and interlayer insulation layer
field-effect transistor with non-overlapping second electrode and interlayer
Materials described outside the worked examples.
graphene
insulation layer (interlayer)
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and 1 B are schematic diagrams showing changes in a Fermi 5 surface of the energy band structure of a semi-metal graphene material when an external …
Related documents with shared materials, methods, properties, or citations.
gate insulation layer
semiconductor interlayer
semiconductor graphene
graphene oxide
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
gate insulation layer
semiconductor interlayer
semiconductor graphene
graphene oxide
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
gate insulation layer
semiconductor interlayer
semiconductor graphene
graphene oxide
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …
gate insulation layer
semiconductor interlayer
semiconductor graphene
graphene oxide
FIG. 2 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiments of the present 10 …
FIGS. 3A through 3 C are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 4 is a cross-sectional view of a field effect transistor including a semi-metal graphene channel layer, according to some embodiment of the present 15 …
FIGS. 5A and 5B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 6 is a cross-sectional view of a field effect transistor including a semiconductor graphene channel layer, according to some embodiments of the 20 present …
FIGS. 7A and 7B are energy band diagrams for describing the operating principle of the field effect transistor shown in
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 8 is a graph schematically showing drain current density according to gate voltages of n-type and p-type field effect transistors including graphene channel …
FIG. 25 5A. In contrast, in case when the field effect transistor 20 is p-type, the conduction band and the valence band of the interlayer 230 have convex shapes …