Patent
US 9,755,059CASCODE STRUCTURES WITH GaN CAP LAYERS
Saptharishi Sriram
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,755,059Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-gate transistor, comprising: a plurality of active semiconductor layers on a substrate; a source and a drain in contact with at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers, wherein said cap layer comprises a semiconductor material, wherein said first gate contacts at least one active semiconductor layer in said plurality of active semiconductor layers and said second gate is separated from said plurality of active semiconductor layers by said cap layer.
The multi-gate transistor of claim 1, wherein said cap layer comprises a Group-I II nitride.
The multi-gate transistor of claim 1, wherein said cap layer has a non-zero thickness equal to or less than about 100nm.
The multi-gate transistor of claim 1, wherein said cap layer has a thickness equal to or greater than about 5nm. Page 2 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein at least part of said cap layer is doped.
The multi-gate transistor of claim 1, further comprising a spacer layer over at least part of said second gate.
The multi-gate transistor of claim 1, further comprising a first field plate.
The multi-gate transistor of claim 1, wherein said second gate is connected to said source. Page 3 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein said second gate is grounded.
The multi-gate transistor of claim 1, wherein said second gate is longer than said first gate.
The multi-gate transistor of claim 1, wherein at least one of said first gate and said second gate comprises an overhanging section.
The multi-gate transistor of claim 1, wherein at least one of said first and second gates is at least partially recessed into at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said multi-gate transistor has a first stage and a second stage; and wherein a threshold voltage of said second stage is different than a threshold voltage of said first stage.
The multi-gate transistor of claim 1, wherein said second gate at least partially overlaps with said first gate, and further comprising a spacer layer between the overlapping portions of said first and second gates.
The multi-gate transistor of claim 1, wherein said first gate is directly on at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is directly between said second gate and a top one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is shaped to define an aperture; and wherein said first gate is at least partially within said ape r ture. Page 6 of
A cascode structure, comprising: a first stage comprising a first gate; Page 4 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: a second stage comprising a second gate; a plurality of active semiconductor layers; wherein said second gate is separated from at least some of said plurality of active semiconductor layers by a cap layer, wherein said cap layer comprises gallium nitride (G aN); wherein said cap layer is shaped to define an aperture; and wherein at least a portion of said first gate is within said aperture and contacting at least one active semiconductor layer in said plurality of active semiconductor layers.
The cascode structure of claim 21, wherein the thickness of said cap layer is greater than or equal to about 5nm and less than or equal to about 100 nm.
The cascode structure of claim 21, wherein said second stage has a more negative threshold voltage than said first stage.
The cascode structure of claim 21, wherein said cascode structure is an amplifier.
An integrated circuit comprising a transistor, said transistor comprising: a plurality of active semiconductor layers on a substrate; a source and a drain on at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers wherein said cap layer is Page 5 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: on less than all of said plurality of active semiconductor layers between said first gate and said drain.
Layer stacks claimed or described, ordered top of device to substrate.
multi-gate transistor
cascode structure with GaN cap layer
Materials described outside the worked examples.
semiconductor cap layer
active semiconductor layers
Group-III nitride
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Thickness | 10–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,755,059Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-gate transistor, comprising: a plurality of active semiconductor layers on a substrate; a source and a drain in contact with at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers, wherein said cap layer comprises a semiconductor material, wherein said first gate contacts at least one active semiconductor layer in said plurality of active semiconductor layers and said second gate is separated from said plurality of active semiconductor layers by said cap layer.
The multi-gate transistor of claim 1, wherein said cap layer comprises a Group-I II nitride.
The multi-gate transistor of claim 1, wherein said cap layer has a non-zero thickness equal to or less than about 100nm.
The multi-gate transistor of claim 1, wherein said cap layer has a thickness equal to or greater than about 5nm. Page 2 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein at least part of said cap layer is doped.
The multi-gate transistor of claim 1, further comprising a spacer layer over at least part of said second gate.
The multi-gate transistor of claim 1, further comprising a first field plate.
The multi-gate transistor of claim 1, wherein said second gate is connected to said source. Page 3 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein said second gate is grounded.
The multi-gate transistor of claim 1, wherein said second gate is longer than said first gate.
The multi-gate transistor of claim 1, wherein at least one of said first gate and said second gate comprises an overhanging section.
The multi-gate transistor of claim 1, wherein at least one of said first and second gates is at least partially recessed into at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said multi-gate transistor has a first stage and a second stage; and wherein a threshold voltage of said second stage is different than a threshold voltage of said first stage.
The multi-gate transistor of claim 1, wherein said second gate at least partially overlaps with said first gate, and further comprising a spacer layer between the overlapping portions of said first and second gates.
The multi-gate transistor of claim 1, wherein said first gate is directly on at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is directly between said second gate and a top one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is shaped to define an aperture; and wherein said first gate is at least partially within said ape r ture. Page 6 of
A cascode structure, comprising: a first stage comprising a first gate; Page 4 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: a second stage comprising a second gate; a plurality of active semiconductor layers; wherein said second gate is separated from at least some of said plurality of active semiconductor layers by a cap layer, wherein said cap layer comprises gallium nitride (G aN); wherein said cap layer is shaped to define an aperture; and wherein at least a portion of said first gate is within said aperture and contacting at least one active semiconductor layer in said plurality of active semiconductor layers.
The cascode structure of claim 21, wherein the thickness of said cap layer is greater than or equal to about 5nm and less than or equal to about 100 nm.
The cascode structure of claim 21, wherein said second stage has a more negative threshold voltage than said first stage.
The cascode structure of claim 21, wherein said cascode structure is an amplifier.
An integrated circuit comprising a transistor, said transistor comprising: a plurality of active semiconductor layers on a substrate; a source and a drain on at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers wherein said cap layer is Page 5 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: on less than all of said plurality of active semiconductor layers between said first gate and said drain.
Layer stacks claimed or described, ordered top of device to substrate.
multi-gate transistor
cascode structure with GaN cap layer
Materials described outside the worked examples.
semiconductor cap layer
active semiconductor layers
Group-III nitride
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Thickness | 10–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,755,059Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-gate transistor, comprising: a plurality of active semiconductor layers on a substrate; a source and a drain in contact with at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers, wherein said cap layer comprises a semiconductor material, wherein said first gate contacts at least one active semiconductor layer in said plurality of active semiconductor layers and said second gate is separated from said plurality of active semiconductor layers by said cap layer.
The multi-gate transistor of claim 1, wherein said cap layer comprises a Group-I II nitride.
The multi-gate transistor of claim 1, wherein said cap layer has a non-zero thickness equal to or less than about 100nm.
The multi-gate transistor of claim 1, wherein said cap layer has a thickness equal to or greater than about 5nm. Page 2 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein at least part of said cap layer is doped.
The multi-gate transistor of claim 1, further comprising a spacer layer over at least part of said second gate.
The multi-gate transistor of claim 1, further comprising a first field plate.
The multi-gate transistor of claim 1, wherein said second gate is connected to said source. Page 3 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein said second gate is grounded.
The multi-gate transistor of claim 1, wherein said second gate is longer than said first gate.
The multi-gate transistor of claim 1, wherein at least one of said first gate and said second gate comprises an overhanging section.
The multi-gate transistor of claim 1, wherein at least one of said first and second gates is at least partially recessed into at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said multi-gate transistor has a first stage and a second stage; and wherein a threshold voltage of said second stage is different than a threshold voltage of said first stage.
The multi-gate transistor of claim 1, wherein said second gate at least partially overlaps with said first gate, and further comprising a spacer layer between the overlapping portions of said first and second gates.
The multi-gate transistor of claim 1, wherein said first gate is directly on at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is directly between said second gate and a top one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is shaped to define an aperture; and wherein said first gate is at least partially within said ape r ture. Page 6 of
A cascode structure, comprising: a first stage comprising a first gate; Page 4 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: a second stage comprising a second gate; a plurality of active semiconductor layers; wherein said second gate is separated from at least some of said plurality of active semiconductor layers by a cap layer, wherein said cap layer comprises gallium nitride (G aN); wherein said cap layer is shaped to define an aperture; and wherein at least a portion of said first gate is within said aperture and contacting at least one active semiconductor layer in said plurality of active semiconductor layers.
The cascode structure of claim 21, wherein the thickness of said cap layer is greater than or equal to about 5nm and less than or equal to about 100 nm.
The cascode structure of claim 21, wherein said second stage has a more negative threshold voltage than said first stage.
The cascode structure of claim 21, wherein said cascode structure is an amplifier.
An integrated circuit comprising a transistor, said transistor comprising: a plurality of active semiconductor layers on a substrate; a source and a drain on at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers wherein said cap layer is Page 5 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: on less than all of said plurality of active semiconductor layers between said first gate and said drain.
Layer stacks claimed or described, ordered top of device to substrate.
multi-gate transistor
cascode structure with GaN cap layer
Materials described outside the worked examples.
semiconductor cap layer
active semiconductor layers
Group-III nitride
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Thickness | 10–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,755,059Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-gate transistor, comprising: a plurality of active semiconductor layers on a substrate; a source and a drain in contact with at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers, wherein said cap layer comprises a semiconductor material, wherein said first gate contacts at least one active semiconductor layer in said plurality of active semiconductor layers and said second gate is separated from said plurality of active semiconductor layers by said cap layer.
The multi-gate transistor of claim 1, wherein said cap layer comprises a Group-I II nitride.
The multi-gate transistor of claim 1, wherein said cap layer has a non-zero thickness equal to or less than about 100nm.
The multi-gate transistor of claim 1, wherein said cap layer has a thickness equal to or greater than about 5nm. Page 2 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein at least part of said cap layer is doped.
The multi-gate transistor of claim 1, further comprising a spacer layer over at least part of said second gate.
The multi-gate transistor of claim 1, further comprising a first field plate.
The multi-gate transistor of claim 1, wherein said second gate is connected to said source. Page 3 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated:
The multi-gate transistor of claim 1, wherein said second gate is grounded.
The multi-gate transistor of claim 1, wherein said second gate is longer than said first gate.
The multi-gate transistor of claim 1, wherein at least one of said first gate and said second gate comprises an overhanging section.
The multi-gate transistor of claim 1, wherein at least one of said first and second gates is at least partially recessed into at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said multi-gate transistor has a first stage and a second stage; and wherein a threshold voltage of said second stage is different than a threshold voltage of said first stage.
The multi-gate transistor of claim 1, wherein said second gate at least partially overlaps with said first gate, and further comprising a spacer layer between the overlapping portions of said first and second gates.
The multi-gate transistor of claim 1, wherein said first gate is directly on at least one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is directly between said second gate and a top one of said plurality of active semiconductor layers.
The multi-gate transistor of claim 1, wherein said cap layer is shaped to define an aperture; and wherein said first gate is at least partially within said ape r ture. Page 6 of
A cascode structure, comprising: a first stage comprising a first gate; Page 4 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: a second stage comprising a second gate; a plurality of active semiconductor layers; wherein said second gate is separated from at least some of said plurality of active semiconductor layers by a cap layer, wherein said cap layer comprises gallium nitride (G aN); wherein said cap layer is shaped to define an aperture; and wherein at least a portion of said first gate is within said aperture and contacting at least one active semiconductor layer in said plurality of active semiconductor layers.
The cascode structure of claim 21, wherein the thickness of said cap layer is greater than or equal to about 5nm and less than or equal to about 100 nm.
The cascode structure of claim 21, wherein said second stage has a more negative threshold voltage than said first stage.
The cascode structure of claim 21, wherein said cascode structure is an amplifier.
An integrated circuit comprising a transistor, said transistor comprising: a plurality of active semiconductor layers on a substrate; a source and a drain on at least one of said plurality of active semiconductor layers; a first gate between said source and drain; a second gate between said first gate and said drain; and a cap layer between and contacting said second gate and said plurality of active semiconductor layers wherein said cap layer is Page 5 of 15 Appl. No. 14/025,478 Office Action Dated: Response Dated: on less than all of said plurality of active semiconductor layers between said first gate and said drain.
Layer stacks claimed or described, ordered top of device to substrate.
multi-gate transistor
cascode structure with GaN cap layer
Materials described outside the worked examples.
semiconductor cap layer
active semiconductor layers
Group-III nitride
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Thickness | 10–1000 nm |
Related documents with shared materials, methods, properties, or citations.
GaN-based dual-gate HEMT cascode structure
gallium nitride
GaN
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
| — |
Thickness | 100–1000 nm | — |
Thickness | 150–500 nm | — |
Thickness | 100–450 nm | — |
Thickness | 100–300 nm | — |
Pressure | 1–7 PA | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
GaN-based dual-gate HEMT cascode structure
gallium nitride
GaN
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
| — |
Thickness | 100–1000 nm | — |
Thickness | 150–500 nm | — |
Thickness | 100–450 nm | — |
Thickness | 100–300 nm | — |
Pressure | 1–7 PA | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
GaN-based dual-gate HEMT cascode structure
gallium nitride
GaN
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
| — |
Thickness | 100–1000 nm | — |
Thickness | 150–500 nm | — |
Thickness | 100–450 nm | — |
Thickness | 100–300 nm | — |
Pressure | 1–7 PA | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |
GaN-based dual-gate HEMT cascode structure
gallium nitride
GaN
FIG. 1 B is a graph of gate-to-drain capacitance as a function of drain voltage in a prior art transistor; [0022]
FIG. 2 is a cross-sectional view of one embodiment of a transistor according to the present invention; [0025]
FIG. 3 is a plan view of the transistor shown in
FIG. 4 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0027]
FIG. 5 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0028]
FIG. 6 is a cross-sectional view of another embodiment of a transistor according to the present invention; 10 P₂₀₈₆ US₁ -7 PATENT [0029]
FIG. 7 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0030]
FIG. 8 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0031]
FIG. 9 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0032]
FIG. 10 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0033]
FIG. 11 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0034]
FIG. 12 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0035]
FIG. 13 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0036]
FIG. 14 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0037]
FIG. 15 is a cross-sectional view of another embodiment of a transistor according to the present invention; 11 SVG …
FIG. 16. Mutually exclusive elements in any two of the above embodiments can be substituted for one another (e.g., a T-shaped gate substituted for a …
FIG. 17 shows an embodiment of a transistor 200 according to the present invention that is similar in many SVG …
FIG. 18 shows an embodiment of a transistor 210 according to the present invention that is similar in many SVG …
FIG. 19. However, as opposed to the first spacer layer 222, which as shown remains beneath the tops of the gates 226,228, the first spacer layer 232 can be …
FIG. 20 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0043]
FIG. 21 is a cross-sectional view of another embodiment of a transistor according to the present invention; [0044]
FIG. 22 is a cross-sectional view of another embodiment of a transistor according to the present invention; and [0045]
FIG. 23 is a cross-sectional view of another embodiment of a transistor according to the present invention. 12 SVG …
| — |
Thickness | 100–1000 nm | — |
Thickness | 150–500 nm | — |
Thickness | 100–450 nm | — |
Thickness | 100–300 nm | — |
Pressure | 1–7 PA | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 5 nm | — |