Patent
US 9,291,513STRAIN SENSING DEVICE USING REDUCED GRAPHENE OXIDE AND METHOD OF MANUFACTURING THE SAME
Nae Eung LEE
US
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US 9,291,513Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 5 show s that the curre nt IDs change d ue to the tensile or c ompr essive strain is caused by a resis t ance change o f the R-G() channel. [0071] FI G. 6 …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIGS. 8A an d SB, a norm alize d current "Ins/Inso (Ins: a curr ent under a strain, and I pso: a cu rre nt w hen there is rio strain)" shows ti me dep endence …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
FIG. 10A) and t he compr essive str a in (F IG. 1013) a re a pp lied. 20 [0082] H ere, th e tensile and compressiv e st r ains main tain abo ut 0.3%, an inte …
FIGS. 11 A to lID show se nsi ng performance., repeatabil ity, a response tim e, and a relaxation ti me, which are measured after a d evic e is periodically …
FIG. 12A) of upw ard bend i ng a t hum b an d a motion (s ee FI G. 12 B) of do wnw ard bending the 10 thumb, Al so, the current IDS is recov ered to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(Cu rr ently amended) The strain sensing device of claim 2, further comprising A strain sensing device comprising: a flexible substrate; a gate electrode formed on the flexible substrate; a gate insulating layer configured to cover the gate electrode, and include a part formed of a flexible material, the gate insulating layer including: a first gate insulating layer formed of oxide deposited by an atomic layer deposition (ALD) process, on the gate electrode; a second gate insulating layer formed of a flexible material, on the first gate insulating layer; and a third gate insulating layer formed of oxide deposited by the ALD process, on the second gate insulating layer; an active layer formed of reduced graphene oxide (R-GO) for sensing a strain, on the gate insulating layer; a source and drain electrode formed on the active layer; and a self-assembled monolayer (SAM) formed on the third gate insulating layer.
(Cu rr ently amended) The strain sensing device of claim [[1]] 3, further comprising an encapsulation layer formed of a hydrophobic material, and configured to at least cover the active layer.
A method of manufacturing a strain sensing device, the method AMENDMENT 14/228,829 -2-Atty. ref.: JIM-127 comprising: forming a gate electrode on a flexible substrate by using e-beam evaporation process using a shadow mask; forming a gate insulating layer including a flexible material on the gate electrode; forming an active layer on the gate insulating layer, the active layer being formed of reduced graphene oxide (R-GO) for sensing a strain; and forming a source and drain electrode on the active layer by using a thermal evaporation process using the shadow mask. withdrawn
The method of claim 6, wherein the forming of a gate insulating layer comprises: depositing oxide on the gate electrode by using an atomic layer deposition (ALD) process to form a first gate insulating layer; spin-coating a polymer material on the first gate insulating layer to form a second gate insulating layer; and depositing oxide on the second gate insulating layer by using the ALD process to form a third gate insulating layer. withdrawn
The method of claim 6, further comprising, before the forming of a gate electrode, spin-coating a polymer material on the flexible substrate to form bare layer. withdrawn
The method of claim 6, further comprising, after the forming of a source and drain electrode, forming an encapsulation layer, which at least covers the active layer, by using a hydrophobic material. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
R-GO field-effect transistor strain sensing device
Materials described outside the worked examples.
reduced graphene oxide
R-GO
oxide (ALD-deposited)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,291,513Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 5 show s that the curre nt IDs change d ue to the tensile or c ompr essive strain is caused by a resis t ance change o f the R-G() channel. [0071] FI G. 6 …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIGS. 8A an d SB, a norm alize d current "Ins/Inso (Ins: a curr ent under a strain, and I pso: a cu rre nt w hen there is rio strain)" shows ti me dep endence …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
FIG. 10A) and t he compr essive str a in (F IG. 1013) a re a pp lied. 20 [0082] H ere, th e tensile and compressiv e st r ains main tain abo ut 0.3%, an inte …
FIGS. 11 A to lID show se nsi ng performance., repeatabil ity, a response tim e, and a relaxation ti me, which are measured after a d evic e is periodically …
FIG. 12A) of upw ard bend i ng a t hum b an d a motion (s ee FI G. 12 B) of do wnw ard bending the 10 thumb, Al so, the current IDS is recov ered to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(Cu rr ently amended) The strain sensing device of claim 2, further comprising A strain sensing device comprising: a flexible substrate; a gate electrode formed on the flexible substrate; a gate insulating layer configured to cover the gate electrode, and include a part formed of a flexible material, the gate insulating layer including: a first gate insulating layer formed of oxide deposited by an atomic layer deposition (ALD) process, on the gate electrode; a second gate insulating layer formed of a flexible material, on the first gate insulating layer; and a third gate insulating layer formed of oxide deposited by the ALD process, on the second gate insulating layer; an active layer formed of reduced graphene oxide (R-GO) for sensing a strain, on the gate insulating layer; a source and drain electrode formed on the active layer; and a self-assembled monolayer (SAM) formed on the third gate insulating layer.
(Cu rr ently amended) The strain sensing device of claim [[1]] 3, further comprising an encapsulation layer formed of a hydrophobic material, and configured to at least cover the active layer.
A method of manufacturing a strain sensing device, the method AMENDMENT 14/228,829 -2-Atty. ref.: JIM-127 comprising: forming a gate electrode on a flexible substrate by using e-beam evaporation process using a shadow mask; forming a gate insulating layer including a flexible material on the gate electrode; forming an active layer on the gate insulating layer, the active layer being formed of reduced graphene oxide (R-GO) for sensing a strain; and forming a source and drain electrode on the active layer by using a thermal evaporation process using the shadow mask. withdrawn
The method of claim 6, wherein the forming of a gate insulating layer comprises: depositing oxide on the gate electrode by using an atomic layer deposition (ALD) process to form a first gate insulating layer; spin-coating a polymer material on the first gate insulating layer to form a second gate insulating layer; and depositing oxide on the second gate insulating layer by using the ALD process to form a third gate insulating layer. withdrawn
The method of claim 6, further comprising, before the forming of a gate electrode, spin-coating a polymer material on the flexible substrate to form bare layer. withdrawn
The method of claim 6, further comprising, after the forming of a source and drain electrode, forming an encapsulation layer, which at least covers the active layer, by using a hydrophobic material. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
R-GO field-effect transistor strain sensing device
Materials described outside the worked examples.
reduced graphene oxide
R-GO
oxide (ALD-deposited)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,291,513Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 5 show s that the curre nt IDs change d ue to the tensile or c ompr essive strain is caused by a resis t ance change o f the R-G() channel. [0071] FI G. 6 …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIGS. 8A an d SB, a norm alize d current "Ins/Inso (Ins: a curr ent under a strain, and I pso: a cu rre nt w hen there is rio strain)" shows ti me dep endence …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
FIG. 10A) and t he compr essive str a in (F IG. 1013) a re a pp lied. 20 [0082] H ere, th e tensile and compressiv e st r ains main tain abo ut 0.3%, an inte …
FIGS. 11 A to lID show se nsi ng performance., repeatabil ity, a response tim e, and a relaxation ti me, which are measured after a d evic e is periodically …
FIG. 12A) of upw ard bend i ng a t hum b an d a motion (s ee FI G. 12 B) of do wnw ard bending the 10 thumb, Al so, the current IDS is recov ered to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(Cu rr ently amended) The strain sensing device of claim 2, further comprising A strain sensing device comprising: a flexible substrate; a gate electrode formed on the flexible substrate; a gate insulating layer configured to cover the gate electrode, and include a part formed of a flexible material, the gate insulating layer including: a first gate insulating layer formed of oxide deposited by an atomic layer deposition (ALD) process, on the gate electrode; a second gate insulating layer formed of a flexible material, on the first gate insulating layer; and a third gate insulating layer formed of oxide deposited by the ALD process, on the second gate insulating layer; an active layer formed of reduced graphene oxide (R-GO) for sensing a strain, on the gate insulating layer; a source and drain electrode formed on the active layer; and a self-assembled monolayer (SAM) formed on the third gate insulating layer.
(Cu rr ently amended) The strain sensing device of claim [[1]] 3, further comprising an encapsulation layer formed of a hydrophobic material, and configured to at least cover the active layer.
A method of manufacturing a strain sensing device, the method AMENDMENT 14/228,829 -2-Atty. ref.: JIM-127 comprising: forming a gate electrode on a flexible substrate by using e-beam evaporation process using a shadow mask; forming a gate insulating layer including a flexible material on the gate electrode; forming an active layer on the gate insulating layer, the active layer being formed of reduced graphene oxide (R-GO) for sensing a strain; and forming a source and drain electrode on the active layer by using a thermal evaporation process using the shadow mask. withdrawn
The method of claim 6, wherein the forming of a gate insulating layer comprises: depositing oxide on the gate electrode by using an atomic layer deposition (ALD) process to form a first gate insulating layer; spin-coating a polymer material on the first gate insulating layer to form a second gate insulating layer; and depositing oxide on the second gate insulating layer by using the ALD process to form a third gate insulating layer. withdrawn
The method of claim 6, further comprising, before the forming of a gate electrode, spin-coating a polymer material on the flexible substrate to form bare layer. withdrawn
The method of claim 6, further comprising, after the forming of a source and drain electrode, forming an encapsulation layer, which at least covers the active layer, by using a hydrophobic material. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
R-GO field-effect transistor strain sensing device
Materials described outside the worked examples.
reduced graphene oxide
R-GO
oxide (ALD-deposited)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,291,513Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 5 show s that the curre nt IDs change d ue to the tensile or c ompr essive strain is caused by a resis t ance change o f the R-G() channel. [0071] FI G. 6 …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIGS. 8A an d SB, a norm alize d current "Ins/Inso (Ins: a curr ent under a strain, and I pso: a cu rre nt w hen there is rio strain)" shows ti me dep endence …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
FIG. 10A) and t he compr essive str a in (F IG. 1013) a re a pp lied. 20 [0082] H ere, th e tensile and compressiv e st r ains main tain abo ut 0.3%, an inte …
FIGS. 11 A to lID show se nsi ng performance., repeatabil ity, a response tim e, and a relaxation ti me, which are measured after a d evic e is periodically …
FIG. 12A) of upw ard bend i ng a t hum b an d a motion (s ee FI G. 12 B) of do wnw ard bending the 10 thumb, Al so, the current IDS is recov ered to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(Cu rr ently amended) The strain sensing device of claim 2, further comprising A strain sensing device comprising: a flexible substrate; a gate electrode formed on the flexible substrate; a gate insulating layer configured to cover the gate electrode, and include a part formed of a flexible material, the gate insulating layer including: a first gate insulating layer formed of oxide deposited by an atomic layer deposition (ALD) process, on the gate electrode; a second gate insulating layer formed of a flexible material, on the first gate insulating layer; and a third gate insulating layer formed of oxide deposited by the ALD process, on the second gate insulating layer; an active layer formed of reduced graphene oxide (R-GO) for sensing a strain, on the gate insulating layer; a source and drain electrode formed on the active layer; and a self-assembled monolayer (SAM) formed on the third gate insulating layer.
(Cu rr ently amended) The strain sensing device of claim [[1]] 3, further comprising an encapsulation layer formed of a hydrophobic material, and configured to at least cover the active layer.
A method of manufacturing a strain sensing device, the method AMENDMENT 14/228,829 -2-Atty. ref.: JIM-127 comprising: forming a gate electrode on a flexible substrate by using e-beam evaporation process using a shadow mask; forming a gate insulating layer including a flexible material on the gate electrode; forming an active layer on the gate insulating layer, the active layer being formed of reduced graphene oxide (R-GO) for sensing a strain; and forming a source and drain electrode on the active layer by using a thermal evaporation process using the shadow mask. withdrawn
The method of claim 6, wherein the forming of a gate insulating layer comprises: depositing oxide on the gate electrode by using an atomic layer deposition (ALD) process to form a first gate insulating layer; spin-coating a polymer material on the first gate insulating layer to form a second gate insulating layer; and depositing oxide on the second gate insulating layer by using the ALD process to form a third gate insulating layer. withdrawn
The method of claim 6, further comprising, before the forming of a gate electrode, spin-coating a polymer material on the flexible substrate to form bare layer. withdrawn
The method of claim 6, further comprising, after the forming of a source and drain electrode, forming an encapsulation layer, which at least covers the active layer, by using a hydrophobic material. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
R-GO field-effect transistor strain sensing device
Materials described outside the worked examples.
reduced graphene oxide
R-GO
oxide (ALD-deposited)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 2A and I 1 sh ow performance s (which ar e measured w ith 5 res pect to motio ns of a hum an b ody) of an R-G() FE T strain sensi ng device acc ording …
Related documents with shared materials, methods, properties, or citations.
flexible polymer material
graphene oxide
hydrophobic material (encapsulation)
self-assembled monolayer
hydrazine hydrate
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
poly-4-vinyl phenol
PVP
polyethersulfone
PES
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
flexible polymer material
graphene oxide
hydrophobic material (encapsulation)
self-assembled monolayer
hydrazine hydrate
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
poly-4-vinyl phenol
PVP
polyethersulfone
PES
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
flexible polymer material
graphene oxide
hydrophobic material (encapsulation)
self-assembled monolayer
hydrazine hydrate
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
poly-4-vinyl phenol
PVP
polyethersulfone
PES
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
flexible polymer material
graphene oxide
hydrophobic material (encapsulation)
self-assembled monolayer
hydrazine hydrate
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
poly-4-vinyl phenol
PVP
polyethersulfone
PES
FIGS. 2 A to 2 J are cros s-s ectional view s ill ust rat ing a process of manufacturing an IR-GO FET, according to an embodiment of the present invention. …
FIGS. 3A an d 3 D. [0026] F IG. 5 shows a resistance of an R-G() thin film obtained from a 10C cu rrent TDs which is measured when a gate voltage is not …
FIG. 4 sh ows, as a function of a m easu r ed tensile str a in and conp ress i ve s tra i n, the minimum source-drain current I in at a charge neutrality po …
FIG. 6 shows a change in fie ld- effe ct mobility d ue t o a tensile strain and a compres siv e strain. [0028]
FIG. 7 sho w s, as a function of the tensile strai n an d co mp ressi ve strain, CNP m ove m ent of the R-GO FE T a cc ordin g to an e mbodim ent of the …
FIG. 9A) and comp ressive strain (FI G. 9B) of about 0.1% to about 0.3%. [0079] In this c ase, F IGS. 9A and 9B show that a time taken in a pplying and …