Patent
US 10,439,093ANTENNA-ASSISTED PHOTOVOLTAIC GRAPHENE DETECTORS
Yu Yao
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,439,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 3A. The inset to
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 5. The detectivity reaches its maximum (> 2 x 108 cm Hzi/2/W) when the antenna gap size is around 50 1 00 nm. The detector performance can be further …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 8 depicts components in an optical characterization system. [00014]
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
FIG. 10A. DETAILED DESCRIPTION [00016] The M IR devices described herein are graphene hybrid/heterostructure photodetectors (GHPD) based on two-dimensional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A mid-infrared photovoltaic photodetector comprising: a substrate; a graphene layer; a dielectric layer positioned between the substrate and the graphene layer; one or more first antenna electrodes, wherein each of the one or more first antenna electrodes comprises a first metal in direct contact with the graphene layer; one or more second antenna electrodes, wherein each of the one or more second antenna electrodes comprises a second metal in direct contact with the graphene layer; a drain electrode electrically coupled to the one or more first antenna electrodes; and a source electrode electrically coupled to the one or more second antenna electrodes, wherein: the first metal and the second metal have different work functions, the one or more first antenna electrodes and the one or more second antenna electrodes are optical antenna electrodes configured to absorb in the mid-infrared spectral region, one of the one or more first antenna electrodes is separated from one of the one or more second antenna electrodes by a distance of 100 nm or less across the graphene layer, and the distance defines a graphene channel between the one of the one or more first antenna electrodes and the one of the one or more second antenna electrodes. Currently amended
The photovoltaic photodetector of claim 1, wherein the substrate comprises a metal. Original
The photovoltaic photodetector of claim 1, wherein the dielectric layer comprises aluminum oxide or silicon oxide. Original
The photovoltaic photodetector of claim 1, further comprising a barrier layer between the graphene layer and the dielectric layer, wherein the barrier layer comprises boron nitride or molybdenum disulfide. Original
The photovoltaic photodetector of claim 1, wherein the first metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the second metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the each of the one or more first antenna electrodes and each of the one or more second antenna electrodes comprises the first metal in direct contact with the graphene layer and the second metal in direct contact with the graphene layer. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes comprises a third metal in contact with the first metal and each of the one or more second antenna electrodes comprises a fourth metal in contact with the second metal. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes is adjacent one of the one or more second antenna electrodes, Original
1 4. The photovoltaic photodetector of claim 1, wherein the photodetector is operable over a wavelength region of 2 p m to 24 m. Original
The photovoltaic photodetector of claim 1, wherein the sensitivity of the photodetector exceeds 2 x 108 cm-Hz t 2/W. Original
The photovoltaic photodetector of claim 1, wherein a response time of the photodetector is 10 ns or less. Original
The photovoltaic photodetector of claim 1, wherein a thickness of the photodetector is less than 1 m. Original
1 8. The photovoltaic photodetector of claim 1, wherein noise due to dark current is substantially zero. Original
Layer stacks claimed or described, ordered top of device to substrate.
mid-infrared photovoltaic graphene photodetector
Materials described outside the worked examples.
graphene
first metal (antenna electrode contact)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption in graphene (metasurface enhanced) | 90 | graphene |
specific detectivity D* | ≥ 200000000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,439,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 3A. The inset to
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 5. The detectivity reaches its maximum (> 2 x 108 cm Hzi/2/W) when the antenna gap size is around 50 1 00 nm. The detector performance can be further …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 8 depicts components in an optical characterization system. [00014]
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
FIG. 10A. DETAILED DESCRIPTION [00016] The M IR devices described herein are graphene hybrid/heterostructure photodetectors (GHPD) based on two-dimensional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A mid-infrared photovoltaic photodetector comprising: a substrate; a graphene layer; a dielectric layer positioned between the substrate and the graphene layer; one or more first antenna electrodes, wherein each of the one or more first antenna electrodes comprises a first metal in direct contact with the graphene layer; one or more second antenna electrodes, wherein each of the one or more second antenna electrodes comprises a second metal in direct contact with the graphene layer; a drain electrode electrically coupled to the one or more first antenna electrodes; and a source electrode electrically coupled to the one or more second antenna electrodes, wherein: the first metal and the second metal have different work functions, the one or more first antenna electrodes and the one or more second antenna electrodes are optical antenna electrodes configured to absorb in the mid-infrared spectral region, one of the one or more first antenna electrodes is separated from one of the one or more second antenna electrodes by a distance of 100 nm or less across the graphene layer, and the distance defines a graphene channel between the one of the one or more first antenna electrodes and the one of the one or more second antenna electrodes. Currently amended
The photovoltaic photodetector of claim 1, wherein the substrate comprises a metal. Original
The photovoltaic photodetector of claim 1, wherein the dielectric layer comprises aluminum oxide or silicon oxide. Original
The photovoltaic photodetector of claim 1, further comprising a barrier layer between the graphene layer and the dielectric layer, wherein the barrier layer comprises boron nitride or molybdenum disulfide. Original
The photovoltaic photodetector of claim 1, wherein the first metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the second metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the each of the one or more first antenna electrodes and each of the one or more second antenna electrodes comprises the first metal in direct contact with the graphene layer and the second metal in direct contact with the graphene layer. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes comprises a third metal in contact with the first metal and each of the one or more second antenna electrodes comprises a fourth metal in contact with the second metal. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes is adjacent one of the one or more second antenna electrodes, Original
1 4. The photovoltaic photodetector of claim 1, wherein the photodetector is operable over a wavelength region of 2 p m to 24 m. Original
The photovoltaic photodetector of claim 1, wherein the sensitivity of the photodetector exceeds 2 x 108 cm-Hz t 2/W. Original
The photovoltaic photodetector of claim 1, wherein a response time of the photodetector is 10 ns or less. Original
The photovoltaic photodetector of claim 1, wherein a thickness of the photodetector is less than 1 m. Original
1 8. The photovoltaic photodetector of claim 1, wherein noise due to dark current is substantially zero. Original
Layer stacks claimed or described, ordered top of device to substrate.
mid-infrared photovoltaic graphene photodetector
Materials described outside the worked examples.
graphene
first metal (antenna electrode contact)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption in graphene (metasurface enhanced) | 90 | graphene |
specific detectivity D* | ≥ 200000000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,439,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 3A. The inset to
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 5. The detectivity reaches its maximum (> 2 x 108 cm Hzi/2/W) when the antenna gap size is around 50 1 00 nm. The detector performance can be further …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 8 depicts components in an optical characterization system. [00014]
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
FIG. 10A. DETAILED DESCRIPTION [00016] The M IR devices described herein are graphene hybrid/heterostructure photodetectors (GHPD) based on two-dimensional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A mid-infrared photovoltaic photodetector comprising: a substrate; a graphene layer; a dielectric layer positioned between the substrate and the graphene layer; one or more first antenna electrodes, wherein each of the one or more first antenna electrodes comprises a first metal in direct contact with the graphene layer; one or more second antenna electrodes, wherein each of the one or more second antenna electrodes comprises a second metal in direct contact with the graphene layer; a drain electrode electrically coupled to the one or more first antenna electrodes; and a source electrode electrically coupled to the one or more second antenna electrodes, wherein: the first metal and the second metal have different work functions, the one or more first antenna electrodes and the one or more second antenna electrodes are optical antenna electrodes configured to absorb in the mid-infrared spectral region, one of the one or more first antenna electrodes is separated from one of the one or more second antenna electrodes by a distance of 100 nm or less across the graphene layer, and the distance defines a graphene channel between the one of the one or more first antenna electrodes and the one of the one or more second antenna electrodes. Currently amended
The photovoltaic photodetector of claim 1, wherein the substrate comprises a metal. Original
The photovoltaic photodetector of claim 1, wherein the dielectric layer comprises aluminum oxide or silicon oxide. Original
The photovoltaic photodetector of claim 1, further comprising a barrier layer between the graphene layer and the dielectric layer, wherein the barrier layer comprises boron nitride or molybdenum disulfide. Original
The photovoltaic photodetector of claim 1, wherein the first metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the second metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the each of the one or more first antenna electrodes and each of the one or more second antenna electrodes comprises the first metal in direct contact with the graphene layer and the second metal in direct contact with the graphene layer. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes comprises a third metal in contact with the first metal and each of the one or more second antenna electrodes comprises a fourth metal in contact with the second metal. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes is adjacent one of the one or more second antenna electrodes, Original
1 4. The photovoltaic photodetector of claim 1, wherein the photodetector is operable over a wavelength region of 2 p m to 24 m. Original
The photovoltaic photodetector of claim 1, wherein the sensitivity of the photodetector exceeds 2 x 108 cm-Hz t 2/W. Original
The photovoltaic photodetector of claim 1, wherein a response time of the photodetector is 10 ns or less. Original
The photovoltaic photodetector of claim 1, wherein a thickness of the photodetector is less than 1 m. Original
1 8. The photovoltaic photodetector of claim 1, wherein noise due to dark current is substantially zero. Original
Layer stacks claimed or described, ordered top of device to substrate.
mid-infrared photovoltaic graphene photodetector
Materials described outside the worked examples.
graphene
first metal (antenna electrode contact)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption in graphene (metasurface enhanced) | 90 | graphene |
specific detectivity D* | ≥ 200000000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,439,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 3A. The inset to
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 5. The detectivity reaches its maximum (> 2 x 108 cm Hzi/2/W) when the antenna gap size is around 50 1 00 nm. The detector performance can be further …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 8 depicts components in an optical characterization system. [00014]
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
FIG. 10A. DETAILED DESCRIPTION [00016] The M IR devices described herein are graphene hybrid/heterostructure photodetectors (GHPD) based on two-dimensional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A mid-infrared photovoltaic photodetector comprising: a substrate; a graphene layer; a dielectric layer positioned between the substrate and the graphene layer; one or more first antenna electrodes, wherein each of the one or more first antenna electrodes comprises a first metal in direct contact with the graphene layer; one or more second antenna electrodes, wherein each of the one or more second antenna electrodes comprises a second metal in direct contact with the graphene layer; a drain electrode electrically coupled to the one or more first antenna electrodes; and a source electrode electrically coupled to the one or more second antenna electrodes, wherein: the first metal and the second metal have different work functions, the one or more first antenna electrodes and the one or more second antenna electrodes are optical antenna electrodes configured to absorb in the mid-infrared spectral region, one of the one or more first antenna electrodes is separated from one of the one or more second antenna electrodes by a distance of 100 nm or less across the graphene layer, and the distance defines a graphene channel between the one of the one or more first antenna electrodes and the one of the one or more second antenna electrodes. Currently amended
The photovoltaic photodetector of claim 1, wherein the substrate comprises a metal. Original
The photovoltaic photodetector of claim 1, wherein the dielectric layer comprises aluminum oxide or silicon oxide. Original
The photovoltaic photodetector of claim 1, further comprising a barrier layer between the graphene layer and the dielectric layer, wherein the barrier layer comprises boron nitride or molybdenum disulfide. Original
The photovoltaic photodetector of claim 1, wherein the first metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the second metal comprises palladium or titanium. Original
The photovoltaic photodetector of claim 1, wherein the each of the one or more first antenna electrodes and each of the one or more second antenna electrodes comprises the first metal in direct contact with the graphene layer and the second metal in direct contact with the graphene layer. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes comprises a third metal in contact with the first metal and each of the one or more second antenna electrodes comprises a fourth metal in contact with the second metal. Original
The photovoltaic photodetector of claim 1, wherein each of the one or more first antenna electrodes is adjacent one of the one or more second antenna electrodes, Original
1 4. The photovoltaic photodetector of claim 1, wherein the photodetector is operable over a wavelength region of 2 p m to 24 m. Original
The photovoltaic photodetector of claim 1, wherein the sensitivity of the photodetector exceeds 2 x 108 cm-Hz t 2/W. Original
The photovoltaic photodetector of claim 1, wherein a response time of the photodetector is 10 ns or less. Original
The photovoltaic photodetector of claim 1, wherein a thickness of the photodetector is less than 1 m. Original
1 8. The photovoltaic photodetector of claim 1, wherein noise due to dark current is substantially zero. Original
Layer stacks claimed or described, ordered top of device to substrate.
mid-infrared photovoltaic graphene photodetector
Materials described outside the worked examples.
graphene
first metal (antenna electrode contact)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption in graphene (metasurface enhanced) | 90 | graphene |
specific detectivity D* | ≥ 200000000 |
Related documents with shared materials, methods, properties, or citations.
second metal (antenna electrode contact)
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
molybdenum disulfide
MoS₂
palladium
Pd
titanium
Ti
gold
Au
metal layer (substrate/reflector)
aluminum
Al
silver
Ag
copper
Cu
silicon
Si
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
detector response time | ≤ 10 | — |
mid-infrared operating wavelength range | 2–24 | — |
total photodetector thickness | ≤ 1 | — |
graphene channel length (antenna nanogap) | ≤ 100 | graphene |
built-in potential across nanogap from different metal contacts | 0.1 | PdTi |
built-in electric field in antenna nanogap | 1 | graphene |
photocarrier transit time across nanogap | ≤ 1 | graphene |
antenna electrode dimensions (FDTD simulation design) | — | Al₂O₃ |
Thickness | 300–400 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–100 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 10000 cm | — |
second metal (antenna electrode contact)
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
molybdenum disulfide
MoS₂
palladium
Pd
titanium
Ti
gold
Au
metal layer (substrate/reflector)
aluminum
Al
silver
Ag
copper
Cu
silicon
Si
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
detector response time | ≤ 10 | — |
mid-infrared operating wavelength range | 2–24 | — |
total photodetector thickness | ≤ 1 | — |
graphene channel length (antenna nanogap) | ≤ 100 | graphene |
built-in potential across nanogap from different metal contacts | 0.1 | PdTi |
built-in electric field in antenna nanogap | 1 | graphene |
photocarrier transit time across nanogap | ≤ 1 | graphene |
antenna electrode dimensions (FDTD simulation design) | — | Al₂O₃ |
Thickness | 300–400 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–100 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 10000 cm | — |
second metal (antenna electrode contact)
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
molybdenum disulfide
MoS₂
palladium
Pd
titanium
Ti
gold
Au
metal layer (substrate/reflector)
aluminum
Al
silver
Ag
copper
Cu
silicon
Si
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
detector response time | ≤ 10 | — |
mid-infrared operating wavelength range | 2–24 | — |
total photodetector thickness | ≤ 1 | — |
graphene channel length (antenna nanogap) | ≤ 100 | graphene |
built-in potential across nanogap from different metal contacts | 0.1 | PdTi |
built-in electric field in antenna nanogap | 1 | graphene |
photocarrier transit time across nanogap | ≤ 1 | graphene |
antenna electrode dimensions (FDTD simulation design) | — | Al₂O₃ |
Thickness | 300–400 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–100 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 10000 cm | — |
second metal (antenna electrode contact)
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
molybdenum disulfide
MoS₂
palladium
Pd
titanium
Ti
gold
Au
metal layer (substrate/reflector)
aluminum
Al
silver
Ag
copper
Cu
silicon
Si
FIG. 1 D. Efficiency may also improve as carrier mobility increases. In one example, the internal quantum efficiency approaches 100 % for a 100 nm graphene channel …
FIG. 2C show absorption (%) versus wavelength (m) for antenna-assisted photovoltaic graphene detectors having one, two, and three layers of graphene, …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 4B shows the band structure alignment in the graphene heterostructure, including two single layer graphene sheets with a barrier layer in between. An …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 6 (bottom left panel). The current density distribution clearly shows that the current flows from one antenna to the graphene in the gap and then to the …
FIG. 7C depicts angle deposition of the third metal to yield fourth metal layer 718 on first metal layer 708 proximate undercut 712 and to otherwise increase …
FIG. 9C. Antenna electrodes 922 include first metal layer 924, second metal layer 926, and third metal layer 928. In first portion 930, first metal layer 924 is …
detector response time | ≤ 10 | — |
mid-infrared operating wavelength range | 2–24 | — |
total photodetector thickness | ≤ 1 | — |
graphene channel length (antenna nanogap) | ≤ 100 | graphene |
built-in potential across nanogap from different metal contacts | 0.1 | PdTi |
built-in electric field in antenna nanogap | 1 | graphene |
photocarrier transit time across nanogap | ≤ 1 | graphene |
antenna electrode dimensions (FDTD simulation design) | — | Al₂O₃ |
Thickness | 300–400 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–100 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 10000 cm | — |