Patent
Atlas literature
Patent
US 12,268,033 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1C show 3D top view surface morphology 20 images for as-deposited, 700° C. and 800° C. annealed Ta₂O₅ films on GaN, respectively.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIG. 5B shows an energy band diagram for the fabricated Au/Ta₂O₅/n-GaN UV PD device at zero-bias under the illumination of UV light.
FIGS. 6A-6C show the I-V curves measured from the 40 (
FIG. 7C) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a 45 function of annealing process.
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 9C and 9F) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a function of annealing process using ND-1 and ND-2 filters measured …
FIG. 10C) post-annealed Au/Ta₂O₅/n-GaN PD devices and the corre- 60 sponding growth/decay time fittings made using equations 5 and 6 for the as-deposited (
FIGS. 11C and 11D graphically show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 700° C. …
FIGS. 12C and 12D show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 800° C. post-annealed …
FIG. 45 6A) as-deposited (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising the steps of: a. growing a silicon-doped n-GaN epitaxial layer on an un-doped GaN/sapphire sample to form a n-GaN sample; b. cleaning the n-GaN epitaxial layer of the n-GaN sample to remove surface oxides; c. pelletizing and depositing tantalum pentoxide (Ta₂O₅) powder on the n-GaN sample to form an Ta₂O₅/GaN stack comprising a Ta₂O₅ film; d. post-annealing the formed Ta₂O₅/GaN stack; and e. depositing high purity Au on the Ta₂O₅/GaN stack to form the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the silicon-doped GaN epitaxial layer has a thickness of 4.5 µm.
The method of claim 1, wherein growing the silicon-doped n-GaN epitaxial layer on the un-doped GaN/sapphire sample is performed via a metal organic chemical vapor deposition (MOCVD) technique.
The method of claim 1, wherein the n-GaN sample is loaded into an electron beam evaporation system after cleaning.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder has a purity of 99%.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder is deposited with a thickness of 45 nm on the n-GaN sample.
The method of claim 1, wherein post-annealing the formed Ta₂O₅/GaN stack is done-performed at a tempera-ture from 600° C. to 900° C. for 1 hour in air.
The method of claim 1, wherein 50 nm of the high purity Au is deposited on the Ta₂O₅/GaN stack using a photolithography interdigitated mask with an area of 6 mm2.
The method of claim 1, further comprising measuring 15 a thickness for each of the deposited tantalum pentoxide (Ta₂O₅) powder and the high purity Au using a quartz crystal microbalance.
The method of claim 1, further comprising transmit-ting illuminated light through neutral density filters to the ultraviolet (UV) photodetector (PD) device to measure pho-tosensitivity of the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the tantalum pentox-ide (Ta₂O₅) powder is deposited on the n-GaN sample at a temperature from 700° C. to 800° C.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is an Au/Ta₂O₅/GaN ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is a heterojunction ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is responsive to illumination at a bias of 0 volts. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
Au/Ta₂O₅/GaN metal-insulator-semiconductor (MIS) UV photodetector
Materials described outside the worked examples.
silicon-doped n-GaN epitaxial layer
GaN:Si
tantalum pentoxide
Ta₂O₅
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of as-deposited Ta2O5 thin film on GaN | 2.19 nm | Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 700°C anneal |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,268,033 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1C show 3D top view surface morphology 20 images for as-deposited, 700° C. and 800° C. annealed Ta₂O₅ films on GaN, respectively.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIG. 5B shows an energy band diagram for the fabricated Au/Ta₂O₅/n-GaN UV PD device at zero-bias under the illumination of UV light.
FIGS. 6A-6C show the I-V curves measured from the 40 (
FIG. 7C) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a 45 function of annealing process.
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 9C and 9F) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a function of annealing process using ND-1 and ND-2 filters measured …
FIG. 10C) post-annealed Au/Ta₂O₅/n-GaN PD devices and the corre- 60 sponding growth/decay time fittings made using equations 5 and 6 for the as-deposited (
FIGS. 11C and 11D graphically show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 700° C. …
FIGS. 12C and 12D show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 800° C. post-annealed …
FIG. 45 6A) as-deposited (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising the steps of: a. growing a silicon-doped n-GaN epitaxial layer on an un-doped GaN/sapphire sample to form a n-GaN sample; b. cleaning the n-GaN epitaxial layer of the n-GaN sample to remove surface oxides; c. pelletizing and depositing tantalum pentoxide (Ta₂O₅) powder on the n-GaN sample to form an Ta₂O₅/GaN stack comprising a Ta₂O₅ film; d. post-annealing the formed Ta₂O₅/GaN stack; and e. depositing high purity Au on the Ta₂O₅/GaN stack to form the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the silicon-doped GaN epitaxial layer has a thickness of 4.5 µm.
The method of claim 1, wherein growing the silicon-doped n-GaN epitaxial layer on the un-doped GaN/sapphire sample is performed via a metal organic chemical vapor deposition (MOCVD) technique.
The method of claim 1, wherein the n-GaN sample is loaded into an electron beam evaporation system after cleaning.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder has a purity of 99%.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder is deposited with a thickness of 45 nm on the n-GaN sample.
The method of claim 1, wherein post-annealing the formed Ta₂O₅/GaN stack is done-performed at a tempera-ture from 600° C. to 900° C. for 1 hour in air.
The method of claim 1, wherein 50 nm of the high purity Au is deposited on the Ta₂O₅/GaN stack using a photolithography interdigitated mask with an area of 6 mm2.
The method of claim 1, further comprising measuring 15 a thickness for each of the deposited tantalum pentoxide (Ta₂O₅) powder and the high purity Au using a quartz crystal microbalance.
The method of claim 1, further comprising transmit-ting illuminated light through neutral density filters to the ultraviolet (UV) photodetector (PD) device to measure pho-tosensitivity of the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the tantalum pentox-ide (Ta₂O₅) powder is deposited on the n-GaN sample at a temperature from 700° C. to 800° C.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is an Au/Ta₂O₅/GaN ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is a heterojunction ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is responsive to illumination at a bias of 0 volts. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
Au/Ta₂O₅/GaN metal-insulator-semiconductor (MIS) UV photodetector
Materials described outside the worked examples.
silicon-doped n-GaN epitaxial layer
GaN:Si
tantalum pentoxide
Ta₂O₅
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of as-deposited Ta2O5 thin film on GaN | 2.19 nm | Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 700°C anneal |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,268,033 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1C show 3D top view surface morphology 20 images for as-deposited, 700° C. and 800° C. annealed Ta₂O₅ films on GaN, respectively.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIG. 5B shows an energy band diagram for the fabricated Au/Ta₂O₅/n-GaN UV PD device at zero-bias under the illumination of UV light.
FIGS. 6A-6C show the I-V curves measured from the 40 (
FIG. 7C) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a 45 function of annealing process.
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 9C and 9F) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a function of annealing process using ND-1 and ND-2 filters measured …
FIG. 10C) post-annealed Au/Ta₂O₅/n-GaN PD devices and the corre- 60 sponding growth/decay time fittings made using equations 5 and 6 for the as-deposited (
FIGS. 11C and 11D graphically show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 700° C. …
FIGS. 12C and 12D show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 800° C. post-annealed …
FIG. 45 6A) as-deposited (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising the steps of: a. growing a silicon-doped n-GaN epitaxial layer on an un-doped GaN/sapphire sample to form a n-GaN sample; b. cleaning the n-GaN epitaxial layer of the n-GaN sample to remove surface oxides; c. pelletizing and depositing tantalum pentoxide (Ta₂O₅) powder on the n-GaN sample to form an Ta₂O₅/GaN stack comprising a Ta₂O₅ film; d. post-annealing the formed Ta₂O₅/GaN stack; and e. depositing high purity Au on the Ta₂O₅/GaN stack to form the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the silicon-doped GaN epitaxial layer has a thickness of 4.5 µm.
The method of claim 1, wherein growing the silicon-doped n-GaN epitaxial layer on the un-doped GaN/sapphire sample is performed via a metal organic chemical vapor deposition (MOCVD) technique.
The method of claim 1, wherein the n-GaN sample is loaded into an electron beam evaporation system after cleaning.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder has a purity of 99%.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder is deposited with a thickness of 45 nm on the n-GaN sample.
The method of claim 1, wherein post-annealing the formed Ta₂O₅/GaN stack is done-performed at a tempera-ture from 600° C. to 900° C. for 1 hour in air.
The method of claim 1, wherein 50 nm of the high purity Au is deposited on the Ta₂O₅/GaN stack using a photolithography interdigitated mask with an area of 6 mm2.
The method of claim 1, further comprising measuring 15 a thickness for each of the deposited tantalum pentoxide (Ta₂O₅) powder and the high purity Au using a quartz crystal microbalance.
The method of claim 1, further comprising transmit-ting illuminated light through neutral density filters to the ultraviolet (UV) photodetector (PD) device to measure pho-tosensitivity of the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the tantalum pentox-ide (Ta₂O₅) powder is deposited on the n-GaN sample at a temperature from 700° C. to 800° C.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is an Au/Ta₂O₅/GaN ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is a heterojunction ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is responsive to illumination at a bias of 0 volts. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
Au/Ta₂O₅/GaN metal-insulator-semiconductor (MIS) UV photodetector
Materials described outside the worked examples.
silicon-doped n-GaN epitaxial layer
GaN:Si
tantalum pentoxide
Ta₂O₅
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of as-deposited Ta2O5 thin film on GaN | 2.19 nm | Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 700°C anneal |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,268,033 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1C show 3D top view surface morphology 20 images for as-deposited, 700° C. and 800° C. annealed Ta₂O₅ films on GaN, respectively.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIG. 5B shows an energy band diagram for the fabricated Au/Ta₂O₅/n-GaN UV PD device at zero-bias under the illumination of UV light.
FIGS. 6A-6C show the I-V curves measured from the 40 (
FIG. 7C) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a 45 function of annealing process.
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 9C and 9F) EQE versus wavelength plots measured from the Au/Ta₂O₅/n-GaN PD devices as a function of annealing process using ND-1 and ND-2 filters measured …
FIG. 10C) post-annealed Au/Ta₂O₅/n-GaN PD devices and the corre- 60 sponding growth/decay time fittings made using equations 5 and 6 for the as-deposited (
FIGS. 11C and 11D graphically show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 700° C. …
FIGS. 12C and 12D show the corresponding growth and decay time fittings made using equations 5 and 6 using ND-1 and ND-2 filters for the 800° C. post-annealed …
FIG. 45 6A) as-deposited (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising the steps of: a. growing a silicon-doped n-GaN epitaxial layer on an un-doped GaN/sapphire sample to form a n-GaN sample; b. cleaning the n-GaN epitaxial layer of the n-GaN sample to remove surface oxides; c. pelletizing and depositing tantalum pentoxide (Ta₂O₅) powder on the n-GaN sample to form an Ta₂O₅/GaN stack comprising a Ta₂O₅ film; d. post-annealing the formed Ta₂O₅/GaN stack; and e. depositing high purity Au on the Ta₂O₅/GaN stack to form the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the silicon-doped GaN epitaxial layer has a thickness of 4.5 µm.
The method of claim 1, wherein growing the silicon-doped n-GaN epitaxial layer on the un-doped GaN/sapphire sample is performed via a metal organic chemical vapor deposition (MOCVD) technique.
The method of claim 1, wherein the n-GaN sample is loaded into an electron beam evaporation system after cleaning.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder has a purity of 99%.
The method of claim 1, wherein the tantalum pentoxide (Ta₂O₅) powder is deposited with a thickness of 45 nm on the n-GaN sample.
The method of claim 1, wherein post-annealing the formed Ta₂O₅/GaN stack is done-performed at a tempera-ture from 600° C. to 900° C. for 1 hour in air.
The method of claim 1, wherein 50 nm of the high purity Au is deposited on the Ta₂O₅/GaN stack using a photolithography interdigitated mask with an area of 6 mm2.
The method of claim 1, further comprising measuring 15 a thickness for each of the deposited tantalum pentoxide (Ta₂O₅) powder and the high purity Au using a quartz crystal microbalance.
The method of claim 1, further comprising transmit-ting illuminated light through neutral density filters to the ultraviolet (UV) photodetector (PD) device to measure pho-tosensitivity of the ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the tantalum pentox-ide (Ta₂O₅) powder is deposited on the n-GaN sample at a temperature from 700° C. to 800° C.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is an Au/Ta₂O₅/GaN ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is a heterojunction ultraviolet (UV) photodetector (PD) device.
The method of claim 1, wherein the ultraviolet (UV) photodetector (PD) device is responsive to illumination at a bias of 0 volts. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
Au/Ta₂O₅/GaN metal-insulator-semiconductor (MIS) UV photodetector
Materials described outside the worked examples.
silicon-doped n-GaN epitaxial layer
GaN:Si
tantalum pentoxide
Ta₂O₅
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphically shows the X-ray diffraction spectrum for the as-deposited and post-annealed Ta₂O₅ films depos- ited on GaN. 25
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of as-deposited Ta2O5 thin film on GaN | 2.19 nm | Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 700°C anneal |
Related documents with shared materials, methods, properties, or citations.
gold (high purity Au)
Au
undoped GaN/sapphire
sapphire (Al₂O₃)
Al₂O₃
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
| 4.87 nm |
Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 800°C anneal | 42.8 nm | Ta₂O₅ |
Temperature | 600–900 °C | — |
Temperature | 700–900 °C | — |
— | 4.52–4.92 eV | — |
Thickness | 210–380 nm | — |
Thickness | 320–400 nm | — |
Thickness | 200–280 nm | — |
Temperature | 700–800 °C | — |
Thickness | 190–700 nm | — |
— | 4.41–4.64 eV | — |
Thickness | 320–380 nm | — |
Thickness | 270–380 nm | — |
Thickness | 220–380 nm | — |
gold (high purity Au)
Au
undoped GaN/sapphire
sapphire (Al₂O₃)
Al₂O₃
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
| 4.87 nm |
Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 800°C anneal | 42.8 nm | Ta₂O₅ |
Temperature | 600–900 °C | — |
Temperature | 700–900 °C | — |
— | 4.52–4.92 eV | — |
Thickness | 210–380 nm | — |
Thickness | 320–400 nm | — |
Thickness | 200–280 nm | — |
Temperature | 700–800 °C | — |
Thickness | 190–700 nm | — |
— | 4.41–4.64 eV | — |
Thickness | 320–380 nm | — |
Thickness | 270–380 nm | — |
Thickness | 220–380 nm | — |
gold (high purity Au)
Au
undoped GaN/sapphire
sapphire (Al₂O₃)
Al₂O₃
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
| 4.87 nm |
Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 800°C anneal | 42.8 nm | Ta₂O₅ |
Temperature | 600–900 °C | — |
Temperature | 700–900 °C | — |
— | 4.52–4.92 eV | — |
Thickness | 210–380 nm | — |
Thickness | 320–400 nm | — |
Thickness | 200–280 nm | — |
Temperature | 700–800 °C | — |
Thickness | 190–700 nm | — |
— | 4.41–4.64 eV | — |
Thickness | 320–380 nm | — |
Thickness | 270–380 nm | — |
Thickness | 220–380 nm | — |
gold (high purity Au)
Au
undoped GaN/sapphire
sapphire (Al₂O₃)
Al₂O₃
FIGS. 3B-3E show Tauc’s plots (fitted using the absorption data of
FIG. 4D shows Ta 4f core level XPS spectra for the 800° C. post-annealed Ta₂O₅/GaN stack. 35
FIGS. 8A-8D show the current-voltage (I-V) curves mea- sured from the 700° C. (
FIGS. 55 3B-3E show Tauc’s plots (fitted using the absorption data of
| 4.87 nm |
Ta₂O₅ |
RMS roughness of Ta2O5 thin film on GaN after 800°C anneal | 42.8 nm | Ta₂O₅ |
Temperature | 600–900 °C | — |
Temperature | 700–900 °C | — |
— | 4.52–4.92 eV | — |
Thickness | 210–380 nm | — |
Thickness | 320–400 nm | — |
Thickness | 200–280 nm | — |
Temperature | 700–800 °C | — |
Thickness | 190–700 nm | — |
— | 4.41–4.64 eV | — |
Thickness | 320–380 nm | — |
Thickness | 270–380 nm | — |
Thickness | 220–380 nm | — |
