Patent
Atlas literature
Patent
US 12,269,737 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the method of manufacturing gallium 15 nitride quantum dots doped with metal ions according to one embodiment of the present invention includes: …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 6 is an electron microscope image of gallium nitride quantum dots doped with zinc. The size of the gallium nitride quantum dots are shown in the graph.
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots doped with metal ions, comprising: preparing a first solution comprising a first precursor including a group III element, a second precursor including a metal, and a compound for a ligand; performing a reaction between the first precursor and the second precursor in the first solution; controlling a temperature of the first solution within a first temperature range; and allowing the first solution to react with a second solution in which a nitrogen-based compound is dissolved in a solvent to form gallium nitride quantum dots doped with metal ions.
The method of claim 1, wherein the first precursor comprises a gallium halide.
The method of claim 1, wherein the second precursor comprises one selected from the group consisting of zinc (Zn), magnesium (Mg), and indium (In).
The method of claim 1, wherein the compound for a ligand comprises oleylamine.
The method of claim 1, wherein the first temperature range is in a range of 200° C. to 280° C.
The method of claim 1, wherein the first solution is allowed to react with the second solution for 1 hour to 3 hours.
The method of claim 1, wherein the second solution comprises lithium hexamethyldisilazide dissolved in anhy-drous hexane.
The method of claim 1, wherein the second solution comprises oleylamine and a mixture of n-butyllithium and tetramethylethylenediamine.
The method of claim 1, further comprising, after the formation of the gallium nitride quantum dots doped with metal ions: removing impurities from a solution comprising the gal-lium nitride quantum dots doped with metal ions using a centrifugation method; mixing ethanol with the solution from which the impuri-ties are removed; and separating the gallium nitride quantum dots doped with metal ions from the solution with which ethanol is mixed, using a centrifugation method.
A gallium nitride quantum dot doped with zinc ions, the gallium nitride quantum having an oleylamine ligand bound to a surface thereof, wherein the gallium nitride quantum dot is doped with zinc ions to lower the bandgap transition energy of the gallium nitride, and wherein bandgap transition of ultraviolet rays and blue emission occur in the gallium nitride quantum dot doped with the zinc ions.
An electronic device comprising the quantum dot defined in claim 11. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride quantum dot doped with zinc ions (with oleylamine surface ligand)
electronic device comprising GaN:Zn quantum dot
Materials described outside the worked examples.
gallium nitride quantum dots doped with metal ions
gallium halide (first precursor, group III element precursor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap transition energy reduction by zinc doping in GaN QDs | — | gallium nitride quantum dot doped with zinc ions |
Temperature | 100–120 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
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Patent
Atlas literature
Patent
US 12,269,737 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the method of manufacturing gallium 15 nitride quantum dots doped with metal ions according to one embodiment of the present invention includes: …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 6 is an electron microscope image of gallium nitride quantum dots doped with zinc. The size of the gallium nitride quantum dots are shown in the graph.
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots doped with metal ions, comprising: preparing a first solution comprising a first precursor including a group III element, a second precursor including a metal, and a compound for a ligand; performing a reaction between the first precursor and the second precursor in the first solution; controlling a temperature of the first solution within a first temperature range; and allowing the first solution to react with a second solution in which a nitrogen-based compound is dissolved in a solvent to form gallium nitride quantum dots doped with metal ions.
The method of claim 1, wherein the first precursor comprises a gallium halide.
The method of claim 1, wherein the second precursor comprises one selected from the group consisting of zinc (Zn), magnesium (Mg), and indium (In).
The method of claim 1, wherein the compound for a ligand comprises oleylamine.
The method of claim 1, wherein the first temperature range is in a range of 200° C. to 280° C.
The method of claim 1, wherein the first solution is allowed to react with the second solution for 1 hour to 3 hours.
The method of claim 1, wherein the second solution comprises lithium hexamethyldisilazide dissolved in anhy-drous hexane.
The method of claim 1, wherein the second solution comprises oleylamine and a mixture of n-butyllithium and tetramethylethylenediamine.
The method of claim 1, further comprising, after the formation of the gallium nitride quantum dots doped with metal ions: removing impurities from a solution comprising the gal-lium nitride quantum dots doped with metal ions using a centrifugation method; mixing ethanol with the solution from which the impuri-ties are removed; and separating the gallium nitride quantum dots doped with metal ions from the solution with which ethanol is mixed, using a centrifugation method.
A gallium nitride quantum dot doped with zinc ions, the gallium nitride quantum having an oleylamine ligand bound to a surface thereof, wherein the gallium nitride quantum dot is doped with zinc ions to lower the bandgap transition energy of the gallium nitride, and wherein bandgap transition of ultraviolet rays and blue emission occur in the gallium nitride quantum dot doped with the zinc ions.
An electronic device comprising the quantum dot defined in claim 11. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride quantum dot doped with zinc ions (with oleylamine surface ligand)
electronic device comprising GaN:Zn quantum dot
Materials described outside the worked examples.
gallium nitride quantum dots doped with metal ions
gallium halide (first precursor, group III element precursor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap transition energy reduction by zinc doping in GaN QDs | — | gallium nitride quantum dot doped with zinc ions |
Temperature | 100–120 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,269,737 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the method of manufacturing gallium 15 nitride quantum dots doped with metal ions according to one embodiment of the present invention includes: …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 6 is an electron microscope image of gallium nitride quantum dots doped with zinc. The size of the gallium nitride quantum dots are shown in the graph.
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots doped with metal ions, comprising: preparing a first solution comprising a first precursor including a group III element, a second precursor including a metal, and a compound for a ligand; performing a reaction between the first precursor and the second precursor in the first solution; controlling a temperature of the first solution within a first temperature range; and allowing the first solution to react with a second solution in which a nitrogen-based compound is dissolved in a solvent to form gallium nitride quantum dots doped with metal ions.
The method of claim 1, wherein the first precursor comprises a gallium halide.
The method of claim 1, wherein the second precursor comprises one selected from the group consisting of zinc (Zn), magnesium (Mg), and indium (In).
The method of claim 1, wherein the compound for a ligand comprises oleylamine.
The method of claim 1, wherein the first temperature range is in a range of 200° C. to 280° C.
The method of claim 1, wherein the first solution is allowed to react with the second solution for 1 hour to 3 hours.
The method of claim 1, wherein the second solution comprises lithium hexamethyldisilazide dissolved in anhy-drous hexane.
The method of claim 1, wherein the second solution comprises oleylamine and a mixture of n-butyllithium and tetramethylethylenediamine.
The method of claim 1, further comprising, after the formation of the gallium nitride quantum dots doped with metal ions: removing impurities from a solution comprising the gal-lium nitride quantum dots doped with metal ions using a centrifugation method; mixing ethanol with the solution from which the impuri-ties are removed; and separating the gallium nitride quantum dots doped with metal ions from the solution with which ethanol is mixed, using a centrifugation method.
A gallium nitride quantum dot doped with zinc ions, the gallium nitride quantum having an oleylamine ligand bound to a surface thereof, wherein the gallium nitride quantum dot is doped with zinc ions to lower the bandgap transition energy of the gallium nitride, and wherein bandgap transition of ultraviolet rays and blue emission occur in the gallium nitride quantum dot doped with the zinc ions.
An electronic device comprising the quantum dot defined in claim 11. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride quantum dot doped with zinc ions (with oleylamine surface ligand)
electronic device comprising GaN:Zn quantum dot
Materials described outside the worked examples.
gallium nitride quantum dots doped with metal ions
gallium halide (first precursor, group III element precursor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap transition energy reduction by zinc doping in GaN QDs | — | gallium nitride quantum dot doped with zinc ions |
Temperature | 100–120 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,269,737 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the method of manufacturing gallium 15 nitride quantum dots doped with metal ions according to one embodiment of the present invention includes: …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 6 is an electron microscope image of gallium nitride quantum dots doped with zinc. The size of the gallium nitride quantum dots are shown in the graph.
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots doped with metal ions, comprising: preparing a first solution comprising a first precursor including a group III element, a second precursor including a metal, and a compound for a ligand; performing a reaction between the first precursor and the second precursor in the first solution; controlling a temperature of the first solution within a first temperature range; and allowing the first solution to react with a second solution in which a nitrogen-based compound is dissolved in a solvent to form gallium nitride quantum dots doped with metal ions.
The method of claim 1, wherein the first precursor comprises a gallium halide.
The method of claim 1, wherein the second precursor comprises one selected from the group consisting of zinc (Zn), magnesium (Mg), and indium (In).
The method of claim 1, wherein the compound for a ligand comprises oleylamine.
The method of claim 1, wherein the first temperature range is in a range of 200° C. to 280° C.
The method of claim 1, wherein the first solution is allowed to react with the second solution for 1 hour to 3 hours.
The method of claim 1, wherein the second solution comprises lithium hexamethyldisilazide dissolved in anhy-drous hexane.
The method of claim 1, wherein the second solution comprises oleylamine and a mixture of n-butyllithium and tetramethylethylenediamine.
The method of claim 1, further comprising, after the formation of the gallium nitride quantum dots doped with metal ions: removing impurities from a solution comprising the gal-lium nitride quantum dots doped with metal ions using a centrifugation method; mixing ethanol with the solution from which the impuri-ties are removed; and separating the gallium nitride quantum dots doped with metal ions from the solution with which ethanol is mixed, using a centrifugation method.
A gallium nitride quantum dot doped with zinc ions, the gallium nitride quantum having an oleylamine ligand bound to a surface thereof, wherein the gallium nitride quantum dot is doped with zinc ions to lower the bandgap transition energy of the gallium nitride, and wherein bandgap transition of ultraviolet rays and blue emission occur in the gallium nitride quantum dot doped with the zinc ions.
An electronic device comprising the quantum dot defined in claim 11. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride quantum dot doped with zinc ions (with oleylamine surface ligand)
electronic device comprising GaN:Zn quantum dot
Materials described outside the worked examples.
gallium nitride quantum dots doped with metal ions
gallium halide (first precursor, group III element precursor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap transition energy reduction by zinc doping in GaN QDs | — | gallium nitride quantum dot doped with zinc ions |
Temperature | 100–120 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
oleylamine
nitrogen-based compound (second solution nitrogen source)
gallium trichloride
GaCl₃
gallium tribromide
GaBr₃
gallium triiodide
GaI₃
zinc
Zn
magnesium
Mg
indium
In
lithium hexamethyldisilazide
anhydrous hexane
n-butyllithium
tetramethylethylenediamine
ethanol
gallium nitride quantum dot doped with zinc ions
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 7. As shown in
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
| — |
Temperature | 200–280 °C | — |
Duration | 1–3 hours | — |
Temperature | ≤ 200 °C | — |
Temperature | ≥ 280 °C | — |
Cited non-patent literature · 2
oleylamine
nitrogen-based compound (second solution nitrogen source)
gallium trichloride
GaCl₃
gallium tribromide
GaBr₃
gallium triiodide
GaI₃
zinc
Zn
magnesium
Mg
indium
In
lithium hexamethyldisilazide
anhydrous hexane
n-butyllithium
tetramethylethylenediamine
ethanol
gallium nitride quantum dot doped with zinc ions
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 7. As shown in
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
| — |
Temperature | 200–280 °C | — |
Duration | 1–3 hours | — |
Temperature | ≤ 200 °C | — |
Temperature | ≥ 280 °C | — |
Cited non-patent literature · 2
oleylamine
nitrogen-based compound (second solution nitrogen source)
gallium trichloride
GaCl₃
gallium tribromide
GaBr₃
gallium triiodide
GaI₃
zinc
Zn
magnesium
Mg
indium
In
lithium hexamethyldisilazide
anhydrous hexane
n-butyllithium
tetramethylethylenediamine
ethanol
gallium nitride quantum dot doped with zinc ions
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 7. As shown in
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
| — |
Temperature | 200–280 °C | — |
Duration | 1–3 hours | — |
Temperature | ≤ 200 °C | — |
Temperature | ≥ 280 °C | — |
Cited non-patent literature · 2
oleylamine
nitrogen-based compound (second solution nitrogen source)
gallium trichloride
GaCl₃
gallium tribromide
GaBr₃
gallium triiodide
GaI₃
zinc
Zn
magnesium
Mg
indium
In
lithium hexamethyldisilazide
anhydrous hexane
n-butyllithium
tetramethylethylenediamine
ethanol
gallium nitride quantum dot doped with zinc ions
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 2. In addition, it is characteristic that the bandgap transition of ultraviolet rays and blue emission occurred in the zinc-doped gallium nitride quantum …
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 3. As shown in
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 4, it can be seen that the fluorescence excitation spectrum of the zinc-doped gallium nitride quantum dots of Example 5 was coincident with the absorption …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 5. The dif- fraction pattern of the zinc-doped gallium nitride quantum dots of Example 1 of the present invention was not signifi- cantly different from …
FIG. 7. As shown in
FIG. 7. As shown in
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIGS. 8 and 9, the binding energy of gallium and nitrogen regions on the X-ray photoelectron spectrum was analyzed. As a result, it can be seen that gallium …
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 9 is a graph showing the X-ray photoelectron spec- trum of a nitrogen region of the gallium nitride quantum dots doped with zinc.
FIG. 10. As shown in
FIG. 10. As shown in
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIGS. 11 and 12, it could be determined whether the ligand was replaced by determining whether B₂ there was a peak corresponding to the vibration energy of C—H …
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 12 is a graph showing the IR absorbance of the gallium nitride quantum dots in which the ligand is substi- tuted with bromine ions.
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 13. Also, the emission spectrum of the zinc-doped gallium nitride quantum dots bound to the oleylamine ligand was measured. The results are shown in
FIG. 14. The emission spectrum of the zinc-doped gallium nitride quan- tum dots bound to the oleic acid ligand was measured. The results are shown in
FIG. 15. However, there was a significant difference in fluores- cence when an amine-based ligand and an acid-based ligand were used. Specifically, when the amine …
FIG. 16 is a graph of normalizing and comparing the emission spectra of the gallium nitride quantum dots doped with zinc in a solution state and the gallium …
| — |
Temperature | 200–280 °C | — |
Duration | 1–3 hours | — |
Temperature | ≤ 200 °C | — |
Temperature | ≥ 280 °C | — |
Cited non-patent literature · 2
