Patent
US 9,263,607PHOTODETECTOR USING GRAPHENE AND METHOD OF MANUFACTURING THE SAME
Won Jong YOO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,263,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of an embodiment of a photodetector using graphene according to the invention; [0039]
FIGS. 2A and 2B are cross-sectional views illustrating a layer structure of an embodiment of a first channel layer of
FIG. 3 is a cross-sectional view of an alternative embodiment of a photodetector using graphene according to the invention; [0041]
FIG. 4 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes three simply and sequentially stacked …
FIG. 5 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes only three simply stacked single …
FIGS. 6 and 7 are distribution charts illustrating light scattering characteristics according to a diameter of a nanoparticle included in a channel layer of an …
FIG. 7 is a light scattering distribution chart illustrating light scattering characteristics according to a diameter of a nanoparticle when the nanoparticle …
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIGS. 18 through 21 are cross-sectional views illustrating an embodiment of a method of manufacturing a photodetector according to the invention.
FIG. 19. [00109] Next, referring to
FIG. 20, a second channel layer 44 covering the nanoparticles 40 is provided on the first channel layer 34. The second channel layer 44 may be a second graphene …
FIG. 21, first and second electrodes 36 and 38 that contact a channel layer 60 are provided on the insulation layer 32. The first electrode 36 may be disposed to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have 7 -binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the graphene channel layer comprises: a first graphene layer; and a first nanoparticle disposed on the first graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a single graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a plurality of graphene layers, which is sequentially stacked and does not have the 7r -binding.
The photodetector of claim 1, wherein the graphene channel layer further comprises a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The photodetector of claim 1, wherein the first and second electrodes comprise a same material.
The photodetector of claim 1, wherein the gate electrode comprises a P-type or N-type silicon electrode.
The photodetector of claim 1, wherein the first nanoparticle comprises gold (Au) or silver (Ag).
The photodetector of claim 1, wherein the gate electrode is disposed above or under the graphene channel layer.
A method of manufacturing a photodetector, the method comprising: providing a graphene channel layer; providing a gate electrode opposite to the graphene channel layer; providing a first electrode which is spaced apart from the gate electrode and contacts a first side of the graphene channel layer; and providing a second electrode which is spaced apart from the gate electrode and contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the providing the graphene channel layer comprises: providing a first graphene layer which does not have R -binding; and providing a first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the gate electrode is provided above or under the graphene channel layer. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a single graphene layer; and transferring the formed single graphene layer to a location where the graphene channel layer is to be provided. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a first single graphene layer; transferring the formed first single graphene layer to a location where the graphene channel layer is to be provided; forming a second single graphene layer; and transferring the formed second single graphene layer onto the first single graphene layer. withdrawn
The method of claim 15, wherein the providing the graphene channel layer further comprises providing a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the providing the first nanoparticle on the first graphene layer comprises: forming a metal layer to form the first nanoparticle on the first graphene layer; and annealing the metal layer. withdrawn
The method of claim 15, wherein the first nanoparticle comprises gold (Au) or silver (Ag). withdrawn
The method of claim 15, wherein the first and second electrodes comprise a same material. Page 6 of 11 YPL 1 178US SI-40548-US RE₂ 011 105201US 0 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector
Materials described outside the worked examples.
graphene
first nanoparticle
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PHOTODETECTOR INCLUDING COMPLEX TRANSPARENT ELECTRODE, METHOD OF MANUFACTURING THE SAME, AND DEVICE INCLUDING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
Patent
Atlas literature
Patent
US 9,263,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of an embodiment of a photodetector using graphene according to the invention; [0039]
FIGS. 2A and 2B are cross-sectional views illustrating a layer structure of an embodiment of a first channel layer of
FIG. 3 is a cross-sectional view of an alternative embodiment of a photodetector using graphene according to the invention; [0041]
FIG. 4 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes three simply and sequentially stacked …
FIG. 5 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes only three simply stacked single …
FIGS. 6 and 7 are distribution charts illustrating light scattering characteristics according to a diameter of a nanoparticle included in a channel layer of an …
FIG. 7 is a light scattering distribution chart illustrating light scattering characteristics according to a diameter of a nanoparticle when the nanoparticle …
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIGS. 18 through 21 are cross-sectional views illustrating an embodiment of a method of manufacturing a photodetector according to the invention.
FIG. 19. [00109] Next, referring to
FIG. 20, a second channel layer 44 covering the nanoparticles 40 is provided on the first channel layer 34. The second channel layer 44 may be a second graphene …
FIG. 21, first and second electrodes 36 and 38 that contact a channel layer 60 are provided on the insulation layer 32. The first electrode 36 may be disposed to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have 7 -binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the graphene channel layer comprises: a first graphene layer; and a first nanoparticle disposed on the first graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a single graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a plurality of graphene layers, which is sequentially stacked and does not have the 7r -binding.
The photodetector of claim 1, wherein the graphene channel layer further comprises a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The photodetector of claim 1, wherein the first and second electrodes comprise a same material.
The photodetector of claim 1, wherein the gate electrode comprises a P-type or N-type silicon electrode.
The photodetector of claim 1, wherein the first nanoparticle comprises gold (Au) or silver (Ag).
The photodetector of claim 1, wherein the gate electrode is disposed above or under the graphene channel layer.
A method of manufacturing a photodetector, the method comprising: providing a graphene channel layer; providing a gate electrode opposite to the graphene channel layer; providing a first electrode which is spaced apart from the gate electrode and contacts a first side of the graphene channel layer; and providing a second electrode which is spaced apart from the gate electrode and contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the providing the graphene channel layer comprises: providing a first graphene layer which does not have R -binding; and providing a first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the gate electrode is provided above or under the graphene channel layer. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a single graphene layer; and transferring the formed single graphene layer to a location where the graphene channel layer is to be provided. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a first single graphene layer; transferring the formed first single graphene layer to a location where the graphene channel layer is to be provided; forming a second single graphene layer; and transferring the formed second single graphene layer onto the first single graphene layer. withdrawn
The method of claim 15, wherein the providing the graphene channel layer further comprises providing a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the providing the first nanoparticle on the first graphene layer comprises: forming a metal layer to form the first nanoparticle on the first graphene layer; and annealing the metal layer. withdrawn
The method of claim 15, wherein the first nanoparticle comprises gold (Au) or silver (Ag). withdrawn
The method of claim 15, wherein the first and second electrodes comprise a same material. Page 6 of 11 YPL 1 178US SI-40548-US RE₂ 011 105201US 0 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector
Materials described outside the worked examples.
graphene
first nanoparticle
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PHOTODETECTOR INCLUDING COMPLEX TRANSPARENT ELECTRODE, METHOD OF MANUFACTURING THE SAME, AND DEVICE INCLUDING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
Patent
Atlas literature
Patent
US 9,263,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of an embodiment of a photodetector using graphene according to the invention; [0039]
FIGS. 2A and 2B are cross-sectional views illustrating a layer structure of an embodiment of a first channel layer of
FIG. 3 is a cross-sectional view of an alternative embodiment of a photodetector using graphene according to the invention; [0041]
FIG. 4 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes three simply and sequentially stacked …
FIG. 5 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes only three simply stacked single …
FIGS. 6 and 7 are distribution charts illustrating light scattering characteristics according to a diameter of a nanoparticle included in a channel layer of an …
FIG. 7 is a light scattering distribution chart illustrating light scattering characteristics according to a diameter of a nanoparticle when the nanoparticle …
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIGS. 18 through 21 are cross-sectional views illustrating an embodiment of a method of manufacturing a photodetector according to the invention.
FIG. 19. [00109] Next, referring to
FIG. 20, a second channel layer 44 covering the nanoparticles 40 is provided on the first channel layer 34. The second channel layer 44 may be a second graphene …
FIG. 21, first and second electrodes 36 and 38 that contact a channel layer 60 are provided on the insulation layer 32. The first electrode 36 may be disposed to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have 7 -binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the graphene channel layer comprises: a first graphene layer; and a first nanoparticle disposed on the first graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a single graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a plurality of graphene layers, which is sequentially stacked and does not have the 7r -binding.
The photodetector of claim 1, wherein the graphene channel layer further comprises a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The photodetector of claim 1, wherein the first and second electrodes comprise a same material.
The photodetector of claim 1, wherein the gate electrode comprises a P-type or N-type silicon electrode.
The photodetector of claim 1, wherein the first nanoparticle comprises gold (Au) or silver (Ag).
The photodetector of claim 1, wherein the gate electrode is disposed above or under the graphene channel layer.
A method of manufacturing a photodetector, the method comprising: providing a graphene channel layer; providing a gate electrode opposite to the graphene channel layer; providing a first electrode which is spaced apart from the gate electrode and contacts a first side of the graphene channel layer; and providing a second electrode which is spaced apart from the gate electrode and contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the providing the graphene channel layer comprises: providing a first graphene layer which does not have R -binding; and providing a first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the gate electrode is provided above or under the graphene channel layer. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a single graphene layer; and transferring the formed single graphene layer to a location where the graphene channel layer is to be provided. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a first single graphene layer; transferring the formed first single graphene layer to a location where the graphene channel layer is to be provided; forming a second single graphene layer; and transferring the formed second single graphene layer onto the first single graphene layer. withdrawn
The method of claim 15, wherein the providing the graphene channel layer further comprises providing a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the providing the first nanoparticle on the first graphene layer comprises: forming a metal layer to form the first nanoparticle on the first graphene layer; and annealing the metal layer. withdrawn
The method of claim 15, wherein the first nanoparticle comprises gold (Au) or silver (Ag). withdrawn
The method of claim 15, wherein the first and second electrodes comprise a same material. Page 6 of 11 YPL 1 178US SI-40548-US RE₂ 011 105201US 0 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector
Materials described outside the worked examples.
graphene
first nanoparticle
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PHOTODETECTOR INCLUDING COMPLEX TRANSPARENT ELECTRODE, METHOD OF MANUFACTURING THE SAME, AND DEVICE INCLUDING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
Patent
Atlas literature
Patent
US 9,263,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of an embodiment of a photodetector using graphene according to the invention; [0039]
FIGS. 2A and 2B are cross-sectional views illustrating a layer structure of an embodiment of a first channel layer of
FIG. 3 is a cross-sectional view of an alternative embodiment of a photodetector using graphene according to the invention; [0041]
FIG. 4 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes three simply and sequentially stacked …
FIG. 5 is an exploded perspective view of an embodiment of a photodetector using graphene, where a channel layer includes only three simply stacked single …
FIGS. 6 and 7 are distribution charts illustrating light scattering characteristics according to a diameter of a nanoparticle included in a channel layer of an …
FIG. 7 is a light scattering distribution chart illustrating light scattering characteristics according to a diameter of a nanoparticle when the nanoparticle …
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIGS. 18 through 21 are cross-sectional views illustrating an embodiment of a method of manufacturing a photodetector according to the invention.
FIG. 19. [00109] Next, referring to
FIG. 20, a second channel layer 44 covering the nanoparticles 40 is provided on the first channel layer 34. The second channel layer 44 may be a second graphene …
FIG. 21, first and second electrodes 36 and 38 that contact a channel layer 60 are provided on the insulation layer 32. The first electrode 36 may be disposed to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have 7 -binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the graphene channel layer comprises: a first graphene layer; and a first nanoparticle disposed on the first graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a single graphene layer.
The photodetector of claim 1, wherein the first graphene layer comprises a plurality of graphene layers, which is sequentially stacked and does not have the 7r -binding.
The photodetector of claim 1, wherein the graphene channel layer further comprises a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The photodetector of claim 1, wherein the first and second electrodes comprise a same material.
The photodetector of claim 1, wherein the gate electrode comprises a P-type or N-type silicon electrode.
The photodetector of claim 1, wherein the first nanoparticle comprises gold (Au) or silver (Ag).
The photodetector of claim 1, wherein the gate electrode is disposed above or under the graphene channel layer.
A method of manufacturing a photodetector, the method comprising: providing a graphene channel layer; providing a gate electrode opposite to the graphene channel layer; providing a first electrode which is spaced apart from the gate electrode and contacts a first side of the graphene channel layer; and providing a second electrode which is spaced apart from the gate electrode and contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the providing the graphene channel layer comprises: providing a first graphene layer which does not have R -binding; and providing a first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the gate electrode is provided above or under the graphene channel layer. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a single graphene layer; and transferring the formed single graphene layer to a location where the graphene channel layer is to be provided. withdrawn
The method of claim 15, wherein the providing the first graphene layer comprises: forming a first single graphene layer; transferring the formed first single graphene layer to a location where the graphene channel layer is to be provided; forming a second single graphene layer; and transferring the formed second single graphene layer onto the first single graphene layer. withdrawn
The method of claim 15, wherein the providing the graphene channel layer further comprises providing a second graphene layer which covers the first nanoparticle on the first graphene layer. withdrawn
The method of claim 15, wherein the providing the first nanoparticle on the first graphene layer comprises: forming a metal layer to form the first nanoparticle on the first graphene layer; and annealing the metal layer. withdrawn
The method of claim 15, wherein the first nanoparticle comprises gold (Au) or silver (Ag). withdrawn
The method of claim 15, wherein the first and second electrodes comprise a same material. Page 6 of 11 YPL 1 178US SI-40548-US RE₂ 011 105201US 0 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector
Materials described outside the worked examples.
graphene
first nanoparticle
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PHOTODETECTOR INCLUDING COMPLEX TRANSPARENT ELECTRODE, METHOD OF MANUFACTURING THE SAME, AND DEVICE INCLUDING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
second nanoparticle
third nanoparticle
silicon (P-type or N-type)
Si
gold
Au
silver
Ag
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
second nanoparticle
third nanoparticle
silicon (P-type or N-type)
Si
gold
Au
silver
Ag
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
second nanoparticle
third nanoparticle
silicon (P-type or N-type)
Si
gold
Au
silver
Ag
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
second nanoparticle
third nanoparticle
silicon (P-type or N-type)
Si
gold
Au
silver
Ag
FIG. 8B is a graph showing a result of X-ray photoelectron spectrum analysis of a graphene channel layer of an embodiment of the photodetector according to the …
FIG. 9 is a graph illustrating current-voltage characteristics of an embodiment of the photodetector according to the invention; [0047]
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 10 is a graph illustrating carrier mobility versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 11 is a graph illustrating carrier sheet density versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 12 is a graph illustrating resistance R c h of a graphene channel layer versus the number of single graphene layers included in a graphene channel layer …
FIG. 13 is a graph illustrating a maximum resistance Rch.max of a graphene channel layer versus the number of single graphene layers included in a graphene …
FIG. 14 is a graph illustrating a Dirac point voltage Vdirac ver sus the number of single graphene layers included in a graphene channel layer of an embodiment …
FIG. 15 is a graph illustrating an On/Off ratio versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 16 is a graph illustrating photon absorbance versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …
FIG. 17 is a graph illustrating a photocurrent versus the number of single graphene layers included in a graphene channel layer of an embodiment of the …