Patent
Atlas literature
Patent
US 12,203,192 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 4 is a flow diagram illustrating an embodiment of the present disclosure; and
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of designing and manufacturing an EMI shielded infrared (IR) window suitable for a specified appli-cation having specified size, transparency, and EMI shield-ing requirements, the method comprising: preparing a slab of GaAs or GaP according to the size requirement of the specified application, the slab hav-ing sufficient thickness to meet a structural competence requirement of the specified application; selecting a plurality of candidate parameter combinations comprising combinations of candidate dopant concen-trations and candidate layer thicknesses for a doped conductive layer to be applied to the slab, the doped layer being a doped layer of GaAs if the slab is a GaAs slab, the doped layer being a doped layer of GaP if the slab is a GaP slab; applying a model to the candidate parameter combina-tions, thereby for each of the candidate parameter combinations estimating an IR absorption and a sheet conductivity of the doped conductive layer, wherein applying the model comprises: applying an empirical low field mobility model accord-ing to Sotoodeh, thereby estimating a carrier mobil-ity of the doped conductive layer; calculating an estimated sheet resistance of the doped conductive layer according to the candidate param-eters and the estimated carrier mobility; and applying a quantum mechanical defect scattering model of free carrier absorption based upon a rela-tionship taught by Nag, thereby estimating the IR absorption of the doped conductive layer according to the candidate layer thickness and the estimated sheet resistance of the doped conductive layer; repeating the steps of selecting candidate parameters and applying the model thereto until an optimal combina-tion of layer thickness and dopant concentration are determined; and if the model predicts that applying the doped semicon-ductor layer having the determined optimal combina-tion of layer thickness and dopant concentration will meet the transparency and EMI shielding requirements of the specified application, applying the doped con-ductive layer to the slab according to the determined optimal combination of layer thickness and dopant concentration.
The method of claim 1, wherein the doped conductive layer is applied to the slab by a vacuum deposition process.
The method of claim 1, wherein the doped conductive layer is applied to the slab by hydride vapor phase epitaxy (HVPE).
The method of claim 1, further comprising applying an anti-reflective (AR) coating onto the doped conductive layer.
The method of claim 1, wherein the slab is a GaAs slab, and preparing the slab includes growing the GaAs slab using HPVE.
The method of claim 1, wherein the method further comprises, if the model predicts that applying the doped semiconductor layer having the determined optimal combi-nation of layer thickness and dopant concentration will not meet the transparency and EMI shielding requirements of the specified application: applying the doped conductive layer to the slab with a combination of layer thickness and dopant concentra-tion that exceeds the transparency requirement of the application; and applying a metallic grid to the slab having a thickness and grid spacing sufficient to cause the combined metallic grid and doped semiconductor EMI shielding to meet both of the transparency and EMI shielding require-ments of the specified application. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
EMI shielded infrared (IR) window
EMI shielded IR window with metallic grid
Materials described outside the worked examples.
GaAs slab
GaAs
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,203,192 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 4 is a flow diagram illustrating an embodiment of the present disclosure; and
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of designing and manufacturing an EMI shielded infrared (IR) window suitable for a specified appli-cation having specified size, transparency, and EMI shield-ing requirements, the method comprising: preparing a slab of GaAs or GaP according to the size requirement of the specified application, the slab hav-ing sufficient thickness to meet a structural competence requirement of the specified application; selecting a plurality of candidate parameter combinations comprising combinations of candidate dopant concen-trations and candidate layer thicknesses for a doped conductive layer to be applied to the slab, the doped layer being a doped layer of GaAs if the slab is a GaAs slab, the doped layer being a doped layer of GaP if the slab is a GaP slab; applying a model to the candidate parameter combina-tions, thereby for each of the candidate parameter combinations estimating an IR absorption and a sheet conductivity of the doped conductive layer, wherein applying the model comprises: applying an empirical low field mobility model accord-ing to Sotoodeh, thereby estimating a carrier mobil-ity of the doped conductive layer; calculating an estimated sheet resistance of the doped conductive layer according to the candidate param-eters and the estimated carrier mobility; and applying a quantum mechanical defect scattering model of free carrier absorption based upon a rela-tionship taught by Nag, thereby estimating the IR absorption of the doped conductive layer according to the candidate layer thickness and the estimated sheet resistance of the doped conductive layer; repeating the steps of selecting candidate parameters and applying the model thereto until an optimal combina-tion of layer thickness and dopant concentration are determined; and if the model predicts that applying the doped semicon-ductor layer having the determined optimal combina-tion of layer thickness and dopant concentration will meet the transparency and EMI shielding requirements of the specified application, applying the doped con-ductive layer to the slab according to the determined optimal combination of layer thickness and dopant concentration.
The method of claim 1, wherein the doped conductive layer is applied to the slab by a vacuum deposition process.
The method of claim 1, wherein the doped conductive layer is applied to the slab by hydride vapor phase epitaxy (HVPE).
The method of claim 1, further comprising applying an anti-reflective (AR) coating onto the doped conductive layer.
The method of claim 1, wherein the slab is a GaAs slab, and preparing the slab includes growing the GaAs slab using HPVE.
The method of claim 1, wherein the method further comprises, if the model predicts that applying the doped semiconductor layer having the determined optimal combi-nation of layer thickness and dopant concentration will not meet the transparency and EMI shielding requirements of the specified application: applying the doped conductive layer to the slab with a combination of layer thickness and dopant concentra-tion that exceeds the transparency requirement of the application; and applying a metallic grid to the slab having a thickness and grid spacing sufficient to cause the combined metallic grid and doped semiconductor EMI shielding to meet both of the transparency and EMI shielding require-ments of the specified application. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
EMI shielded infrared (IR) window
EMI shielded IR window with metallic grid
Materials described outside the worked examples.
GaAs slab
GaAs
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,203,192 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 4 is a flow diagram illustrating an embodiment of the present disclosure; and
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of designing and manufacturing an EMI shielded infrared (IR) window suitable for a specified appli-cation having specified size, transparency, and EMI shield-ing requirements, the method comprising: preparing a slab of GaAs or GaP according to the size requirement of the specified application, the slab hav-ing sufficient thickness to meet a structural competence requirement of the specified application; selecting a plurality of candidate parameter combinations comprising combinations of candidate dopant concen-trations and candidate layer thicknesses for a doped conductive layer to be applied to the slab, the doped layer being a doped layer of GaAs if the slab is a GaAs slab, the doped layer being a doped layer of GaP if the slab is a GaP slab; applying a model to the candidate parameter combina-tions, thereby for each of the candidate parameter combinations estimating an IR absorption and a sheet conductivity of the doped conductive layer, wherein applying the model comprises: applying an empirical low field mobility model accord-ing to Sotoodeh, thereby estimating a carrier mobil-ity of the doped conductive layer; calculating an estimated sheet resistance of the doped conductive layer according to the candidate param-eters and the estimated carrier mobility; and applying a quantum mechanical defect scattering model of free carrier absorption based upon a rela-tionship taught by Nag, thereby estimating the IR absorption of the doped conductive layer according to the candidate layer thickness and the estimated sheet resistance of the doped conductive layer; repeating the steps of selecting candidate parameters and applying the model thereto until an optimal combina-tion of layer thickness and dopant concentration are determined; and if the model predicts that applying the doped semicon-ductor layer having the determined optimal combina-tion of layer thickness and dopant concentration will meet the transparency and EMI shielding requirements of the specified application, applying the doped con-ductive layer to the slab according to the determined optimal combination of layer thickness and dopant concentration.
The method of claim 1, wherein the doped conductive layer is applied to the slab by a vacuum deposition process.
The method of claim 1, wherein the doped conductive layer is applied to the slab by hydride vapor phase epitaxy (HVPE).
The method of claim 1, further comprising applying an anti-reflective (AR) coating onto the doped conductive layer.
The method of claim 1, wherein the slab is a GaAs slab, and preparing the slab includes growing the GaAs slab using HPVE.
The method of claim 1, wherein the method further comprises, if the model predicts that applying the doped semiconductor layer having the determined optimal combi-nation of layer thickness and dopant concentration will not meet the transparency and EMI shielding requirements of the specified application: applying the doped conductive layer to the slab with a combination of layer thickness and dopant concentra-tion that exceeds the transparency requirement of the application; and applying a metallic grid to the slab having a thickness and grid spacing sufficient to cause the combined metallic grid and doped semiconductor EMI shielding to meet both of the transparency and EMI shielding require-ments of the specified application. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
EMI shielded infrared (IR) window
EMI shielded IR window with metallic grid
Materials described outside the worked examples.
GaAs slab
GaAs
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,203,192 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 4 is a flow diagram illustrating an embodiment of the present disclosure; and
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of designing and manufacturing an EMI shielded infrared (IR) window suitable for a specified appli-cation having specified size, transparency, and EMI shield-ing requirements, the method comprising: preparing a slab of GaAs or GaP according to the size requirement of the specified application, the slab hav-ing sufficient thickness to meet a structural competence requirement of the specified application; selecting a plurality of candidate parameter combinations comprising combinations of candidate dopant concen-trations and candidate layer thicknesses for a doped conductive layer to be applied to the slab, the doped layer being a doped layer of GaAs if the slab is a GaAs slab, the doped layer being a doped layer of GaP if the slab is a GaP slab; applying a model to the candidate parameter combina-tions, thereby for each of the candidate parameter combinations estimating an IR absorption and a sheet conductivity of the doped conductive layer, wherein applying the model comprises: applying an empirical low field mobility model accord-ing to Sotoodeh, thereby estimating a carrier mobil-ity of the doped conductive layer; calculating an estimated sheet resistance of the doped conductive layer according to the candidate param-eters and the estimated carrier mobility; and applying a quantum mechanical defect scattering model of free carrier absorption based upon a rela-tionship taught by Nag, thereby estimating the IR absorption of the doped conductive layer according to the candidate layer thickness and the estimated sheet resistance of the doped conductive layer; repeating the steps of selecting candidate parameters and applying the model thereto until an optimal combina-tion of layer thickness and dopant concentration are determined; and if the model predicts that applying the doped semicon-ductor layer having the determined optimal combina-tion of layer thickness and dopant concentration will meet the transparency and EMI shielding requirements of the specified application, applying the doped con-ductive layer to the slab according to the determined optimal combination of layer thickness and dopant concentration.
The method of claim 1, wherein the doped conductive layer is applied to the slab by a vacuum deposition process.
The method of claim 1, wherein the doped conductive layer is applied to the slab by hydride vapor phase epitaxy (HVPE).
The method of claim 1, further comprising applying an anti-reflective (AR) coating onto the doped conductive layer.
The method of claim 1, wherein the slab is a GaAs slab, and preparing the slab includes growing the GaAs slab using HPVE.
The method of claim 1, wherein the method further comprises, if the model predicts that applying the doped semiconductor layer having the determined optimal combi-nation of layer thickness and dopant concentration will not meet the transparency and EMI shielding requirements of the specified application: applying the doped conductive layer to the slab with a combination of layer thickness and dopant concentra-tion that exceeds the transparency requirement of the application; and applying a metallic grid to the slab having a thickness and grid spacing sufficient to cause the combined metallic grid and doped semiconductor EMI shielding to meet both of the transparency and EMI shielding require-ments of the specified application. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
EMI shielded infrared (IR) window
EMI shielded IR window with metallic grid
Materials described outside the worked examples.
GaAs slab
GaAs
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph presenting a comparison of measured values of carrier mobility for doped GaAs as a function of dopant concentration with predictions of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
GaP
anti-reflective (AR) coating
metallic grid
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Cited non-patent literature · 2
GaP
anti-reflective (AR) coating
metallic grid
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Cited non-patent literature · 2
GaP
anti-reflective (AR) coating
metallic grid
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Cited non-patent literature · 2
GaP
anti-reflective (AR) coating
metallic grid
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 2 is a graph presenting a comparison of measured values of absorption for doped GaAs as a function of layer thickness with predictions of the Drude and …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 3 is a graph comparing measured values of doped GaAs layers with predictions of the model included in the present disclosure, where sheet resistance is …
FIG. 5 is a graph comparing the very high spectral transmission of GaAs grown by HVPE compared to the much lower transmission of typical commercial melt-grown …
Cited non-patent literature · 2
