Patent
Atlas literature
Patent
US 12,650,538 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view showing a substrate wafer placed within an LP-HVPE reactor;
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
FIG. 3 is a cross-sectional side view illustrating a method of growing GaAs slabs by HVPE on a silicon substrate, whereby layers of GaAsP are applied to the …
FIG. 4A is a cross-sectional side view illustrating an embodiment where a sacrificial layer is included between the GaAs or GaP slab and the silicon substrate; …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An infrared window comprising a GaAs slab having a slab largest dimension that is greater than eight inches, said slab being formed from a substrate wafer of single crystal silicon to which at least one layer of GaAs has been applied by Hydride Vapor Phase Epitaxy (“HVPE”), the substrate wafer being removable from the slab.
The infrared window of claim 1, wherein the slab largest dimension is greater than 12 inches.
The infrared window of claim 1, wherein the slab is substantially round, having a slab diameter of greater than eight inches.
The infrared window of claim 1, wherein the slab is at least 2 mm thick.
The infrared window of claim 1, further comprising an electrically conductive layer of doped GaAs or GaP applied to the slab.
The infrared windows of claim 1, wherein the substrate wafer is a wafer of single crystal silicon.
The infrared window of claim 1, further comprising an anti-reflective coating applied to the slab. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
large GaAs infrared window
Materials described outside the worked examples.
GaAs
single crystal silicon
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL2 absorption band near 1 micron (reduced in HVPE-grown GaAs vs melt-grown) | — | GaAs |
GaAs transparency range | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,650,538 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view showing a substrate wafer placed within an LP-HVPE reactor;
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
FIG. 3 is a cross-sectional side view illustrating a method of growing GaAs slabs by HVPE on a silicon substrate, whereby layers of GaAsP are applied to the …
FIG. 4A is a cross-sectional side view illustrating an embodiment where a sacrificial layer is included between the GaAs or GaP slab and the silicon substrate; …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An infrared window comprising a GaAs slab having a slab largest dimension that is greater than eight inches, said slab being formed from a substrate wafer of single crystal silicon to which at least one layer of GaAs has been applied by Hydride Vapor Phase Epitaxy (“HVPE”), the substrate wafer being removable from the slab.
The infrared window of claim 1, wherein the slab largest dimension is greater than 12 inches.
The infrared window of claim 1, wherein the slab is substantially round, having a slab diameter of greater than eight inches.
The infrared window of claim 1, wherein the slab is at least 2 mm thick.
The infrared window of claim 1, further comprising an electrically conductive layer of doped GaAs or GaP applied to the slab.
The infrared windows of claim 1, wherein the substrate wafer is a wafer of single crystal silicon.
The infrared window of claim 1, further comprising an anti-reflective coating applied to the slab. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
large GaAs infrared window
Materials described outside the worked examples.
GaAs
single crystal silicon
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL2 absorption band near 1 micron (reduced in HVPE-grown GaAs vs melt-grown) | — | GaAs |
GaAs transparency range | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,650,538 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view showing a substrate wafer placed within an LP-HVPE reactor;
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
FIG. 3 is a cross-sectional side view illustrating a method of growing GaAs slabs by HVPE on a silicon substrate, whereby layers of GaAsP are applied to the …
FIG. 4A is a cross-sectional side view illustrating an embodiment where a sacrificial layer is included between the GaAs or GaP slab and the silicon substrate; …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An infrared window comprising a GaAs slab having a slab largest dimension that is greater than eight inches, said slab being formed from a substrate wafer of single crystal silicon to which at least one layer of GaAs has been applied by Hydride Vapor Phase Epitaxy (“HVPE”), the substrate wafer being removable from the slab.
The infrared window of claim 1, wherein the slab largest dimension is greater than 12 inches.
The infrared window of claim 1, wherein the slab is substantially round, having a slab diameter of greater than eight inches.
The infrared window of claim 1, wherein the slab is at least 2 mm thick.
The infrared window of claim 1, further comprising an electrically conductive layer of doped GaAs or GaP applied to the slab.
The infrared windows of claim 1, wherein the substrate wafer is a wafer of single crystal silicon.
The infrared window of claim 1, further comprising an anti-reflective coating applied to the slab. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
large GaAs infrared window
Materials described outside the worked examples.
GaAs
single crystal silicon
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL2 absorption band near 1 micron (reduced in HVPE-grown GaAs vs melt-grown) | — | GaAs |
GaAs transparency range | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,650,538 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view showing a substrate wafer placed within an LP-HVPE reactor;
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
FIG. 3 is a cross-sectional side view illustrating a method of growing GaAs slabs by HVPE on a silicon substrate, whereby layers of GaAsP are applied to the …
FIG. 4A is a cross-sectional side view illustrating an embodiment where a sacrificial layer is included between the GaAs or GaP slab and the silicon substrate; …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An infrared window comprising a GaAs slab having a slab largest dimension that is greater than eight inches, said slab being formed from a substrate wafer of single crystal silicon to which at least one layer of GaAs has been applied by Hydride Vapor Phase Epitaxy (“HVPE”), the substrate wafer being removable from the slab.
The infrared window of claim 1, wherein the slab largest dimension is greater than 12 inches.
The infrared window of claim 1, wherein the slab is substantially round, having a slab diameter of greater than eight inches.
The infrared window of claim 1, wherein the slab is at least 2 mm thick.
The infrared window of claim 1, further comprising an electrically conductive layer of doped GaAs or GaP applied to the slab.
The infrared windows of claim 1, wherein the substrate wafer is a wafer of single crystal silicon.
The infrared window of claim 1, further comprising an anti-reflective coating applied to the slab. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
large GaAs infrared window
Materials described outside the worked examples.
GaAs
single crystal silicon
Si
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph that illustrates the decreased absorption near 1 micron of GaAs grown via LP-HVPE as compared to GaAs from a boule grown from melt;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL2 absorption band near 1 micron (reduced in HVPE-grown GaAs vs melt-grown) | — | GaAs |
GaAs transparency range | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
doped GaP
GaP
GaAsP buffer layer
GaAsP
zinc sulfide
ZnS
GaP transparency range | — | GaP |
Thickness | ≥ 2 mm | — |
Cited non-patent literature · 2
doped GaP
GaP
GaAsP buffer layer
GaAsP
zinc sulfide
ZnS
GaP transparency range | — | GaP |
Thickness | ≥ 2 mm | — |
Cited non-patent literature · 2
doped GaP
GaP
GaAsP buffer layer
GaAsP
zinc sulfide
ZnS
GaP transparency range | — | GaP |
Thickness | ≥ 2 mm | — |
Cited non-patent literature · 2
doped GaP
GaP
GaAsP buffer layer
GaAsP
zinc sulfide
ZnS
GaP transparency range | — | GaP |
Thickness | ≥ 2 mm | — |
Cited non-patent literature · 2
