Patent
Gallium Nitride-Based Compound Semiconductor Light Emitting Device
US
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Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting device comprising a sapphire substrate having a C- pl ane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light- emitting device is a rectangular shape with vertical and longitudinal rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side e nd surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and-a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A-plane is inclined with respect to a principal surface of the substrate such that a cross sectional area of the gallium nitride-based compound semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle surface of the substrate is less than 90 °.
: The light emitting device according to claim 1, wherein- a t he ratio of a rectangular short side to-a the rectangular long side of the gallium nitride-based compound semiconductor layer is from 1:10 to 4:5.
: The light emitting device according to claim 1, wherein a positive electrode bonding pad is located in a center of-a th e rectangular long side of the gallium nitride-based compound semiconductor layer.
: A lamp comprising the light emitting device according to claim 1.
: The light emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor layer has a planar upper surface.
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(withdrawn-currently amended): A method for producing a light emitting device comprising a sapphire substrate having a C-plane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light-emitting device is a rectangular shape with-ve rt-i eal -and lon gi tu di n a l rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side end surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and -a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A- pl ane is inclined with respect to a principle surface of the substrate such that a cross sectional area of the gallium nitride-based semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle 3 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Attorney Docket No.: Q₁₁₀₇₂₇ Appln. No.: 12/300,302 surface of the substrate is less than 90 0, the method comprising the steps of covering a surface of the gallium nitride-based compound semiconductor layer with a mask having a predetermined pattern; removing the gallium nitride-based compound semiconductor layer at a site to be split into devices so as to reach the substrate; subjecting to a wet etching treatment after removal; and splitting into each device.
: The method for producing a light emitting device according to claim 8, wherein the mask is a photoresist.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a laser.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a dicing machine.
: The method for producing a light emitting device according to claim 8, wherein the wet etching treatment is performed using orthophosphoric acid.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A c-plane sapphire substrate was used. An AlN buffer layer was formed, followed by a 6 µm undoped GaN underlying layer, a 4 µm periodically Ge-doped n-type GaN contact layer (average carrier concentration 1×10¹⁸ cm⁻³), a 12.5 nm n-type In0.1Ga0.9N clad layer, a multiple quantum well light-emitting layer (5× GaN barrier 16 nm/In0.2Ga0.8N well 2.5 nm, ending with barrier), and a 0.15 µm Mg-doped (8×10¹⁹ cm⁻³) Al0.03Ga0.97N p-type contact layer, all by MOCVD. A 0.25 µm ITO transparent electrode was deposited by sputtering and patterned into a rectangular shape with the long side parallel to the A-plane (11-20) of GaN. Negative and positive electrodes (Cr/Ti/Au structure) were formed. The device external form is 250 µm (short side) × 500 µm (long side). The positive electrode bonding pad (diameter 95 µm) is at the center of the long side, 235 µm from the negative electrode. A photoresist mask was applied, and split grooves were formed by laser (wavelength 266 nm, 50 kHz, 1.6 W, 70 mm/s) to a depth of 20 µm in both X and Y axis directions, followed by wet etching and device splitting.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light emitting device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rectangular chip dimensions (short side × long side) | 250 µm × 500 µm | — |
positive electrode bonding pad diameter | 95 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting device comprising a sapphire substrate having a C- pl ane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light- emitting device is a rectangular shape with vertical and longitudinal rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side e nd surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and-a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A-plane is inclined with respect to a principal surface of the substrate such that a cross sectional area of the gallium nitride-based compound semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle surface of the substrate is less than 90 °.
: The light emitting device according to claim 1, wherein- a t he ratio of a rectangular short side to-a the rectangular long side of the gallium nitride-based compound semiconductor layer is from 1:10 to 4:5.
: The light emitting device according to claim 1, wherein a positive electrode bonding pad is located in a center of-a th e rectangular long side of the gallium nitride-based compound semiconductor layer.
: A lamp comprising the light emitting device according to claim 1.
: The light emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor layer has a planar upper surface.
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.
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(withdrawn-currently amended): A method for producing a light emitting device comprising a sapphire substrate having a C-plane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light-emitting device is a rectangular shape with-ve rt-i eal -and lon gi tu di n a l rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side end surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and -a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A- pl ane is inclined with respect to a principle surface of the substrate such that a cross sectional area of the gallium nitride-based semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle 3 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Attorney Docket No.: Q₁₁₀₇₂₇ Appln. No.: 12/300,302 surface of the substrate is less than 90 0, the method comprising the steps of covering a surface of the gallium nitride-based compound semiconductor layer with a mask having a predetermined pattern; removing the gallium nitride-based compound semiconductor layer at a site to be split into devices so as to reach the substrate; subjecting to a wet etching treatment after removal; and splitting into each device.
: The method for producing a light emitting device according to claim 8, wherein the mask is a photoresist.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a laser.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a dicing machine.
: The method for producing a light emitting device according to claim 8, wherein the wet etching treatment is performed using orthophosphoric acid.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A c-plane sapphire substrate was used. An AlN buffer layer was formed, followed by a 6 µm undoped GaN underlying layer, a 4 µm periodically Ge-doped n-type GaN contact layer (average carrier concentration 1×10¹⁸ cm⁻³), a 12.5 nm n-type In0.1Ga0.9N clad layer, a multiple quantum well light-emitting layer (5× GaN barrier 16 nm/In0.2Ga0.8N well 2.5 nm, ending with barrier), and a 0.15 µm Mg-doped (8×10¹⁹ cm⁻³) Al0.03Ga0.97N p-type contact layer, all by MOCVD. A 0.25 µm ITO transparent electrode was deposited by sputtering and patterned into a rectangular shape with the long side parallel to the A-plane (11-20) of GaN. Negative and positive electrodes (Cr/Ti/Au structure) were formed. The device external form is 250 µm (short side) × 500 µm (long side). The positive electrode bonding pad (diameter 95 µm) is at the center of the long side, 235 µm from the negative electrode. A photoresist mask was applied, and split grooves were formed by laser (wavelength 266 nm, 50 kHz, 1.6 W, 70 mm/s) to a depth of 20 µm in both X and Y axis directions, followed by wet etching and device splitting.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light emitting device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rectangular chip dimensions (short side × long side) | 250 µm × 500 µm | — |
positive electrode bonding pad diameter | 95 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting device comprising a sapphire substrate having a C- pl ane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light- emitting device is a rectangular shape with vertical and longitudinal rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side e nd surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and-a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A-plane is inclined with respect to a principal surface of the substrate such that a cross sectional area of the gallium nitride-based compound semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle surface of the substrate is less than 90 °.
: The light emitting device according to claim 1, wherein- a t he ratio of a rectangular short side to-a the rectangular long side of the gallium nitride-based compound semiconductor layer is from 1:10 to 4:5.
: The light emitting device according to claim 1, wherein a positive electrode bonding pad is located in a center of-a th e rectangular long side of the gallium nitride-based compound semiconductor layer.
: A lamp comprising the light emitting device according to claim 1.
: The light emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor layer has a planar upper surface.
.
.
.
(withdrawn-currently amended): A method for producing a light emitting device comprising a sapphire substrate having a C-plane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light-emitting device is a rectangular shape with-ve rt-i eal -and lon gi tu di n a l rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side end surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and -a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A- pl ane is inclined with respect to a principle surface of the substrate such that a cross sectional area of the gallium nitride-based semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle 3 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Attorney Docket No.: Q₁₁₀₇₂₇ Appln. No.: 12/300,302 surface of the substrate is less than 90 0, the method comprising the steps of covering a surface of the gallium nitride-based compound semiconductor layer with a mask having a predetermined pattern; removing the gallium nitride-based compound semiconductor layer at a site to be split into devices so as to reach the substrate; subjecting to a wet etching treatment after removal; and splitting into each device.
: The method for producing a light emitting device according to claim 8, wherein the mask is a photoresist.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a laser.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a dicing machine.
: The method for producing a light emitting device according to claim 8, wherein the wet etching treatment is performed using orthophosphoric acid.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A c-plane sapphire substrate was used. An AlN buffer layer was formed, followed by a 6 µm undoped GaN underlying layer, a 4 µm periodically Ge-doped n-type GaN contact layer (average carrier concentration 1×10¹⁸ cm⁻³), a 12.5 nm n-type In0.1Ga0.9N clad layer, a multiple quantum well light-emitting layer (5× GaN barrier 16 nm/In0.2Ga0.8N well 2.5 nm, ending with barrier), and a 0.15 µm Mg-doped (8×10¹⁹ cm⁻³) Al0.03Ga0.97N p-type contact layer, all by MOCVD. A 0.25 µm ITO transparent electrode was deposited by sputtering and patterned into a rectangular shape with the long side parallel to the A-plane (11-20) of GaN. Negative and positive electrodes (Cr/Ti/Au structure) were formed. The device external form is 250 µm (short side) × 500 µm (long side). The positive electrode bonding pad (diameter 95 µm) is at the center of the long side, 235 µm from the negative electrode. A photoresist mask was applied, and split grooves were formed by laser (wavelength 266 nm, 50 kHz, 1.6 W, 70 mm/s) to a depth of 20 µm in both X and Y axis directions, followed by wet etching and device splitting.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light emitting device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rectangular chip dimensions (short side × long side) | 250 µm × 500 µm | — |
positive electrode bonding pad diameter | 95 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A light emitting device comprising a sapphire substrate having a C- pl ane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light- emitting device is a rectangular shape with vertical and longitudinal rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side e nd surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and-a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A-plane is inclined with respect to a principal surface of the substrate such that a cross sectional area of the gallium nitride-based compound semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle surface of the substrate is less than 90 °.
: The light emitting device according to claim 1, wherein- a t he ratio of a rectangular short side to-a the rectangular long side of the gallium nitride-based compound semiconductor layer is from 1:10 to 4:5.
: The light emitting device according to claim 1, wherein a positive electrode bonding pad is located in a center of-a th e rectangular long side of the gallium nitride-based compound semiconductor layer.
: A lamp comprising the light emitting device according to claim 1.
: The light emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor layer has a planar upper surface.
.
.
.
(withdrawn-currently amended): A method for producing a light emitting device comprising a sapphire substrate having a C-plane upper surface and a gallium nitride-based compound semiconductor layer formed on the upper surface of the substrate, wherein a planar projection shape of said light-emitting device is a rectangular shape with-ve rt-i eal -and lon gi tu di n a l rectangular long and short sides each having a different length, said light emitting device having a side end surface at each of the rectangular long sides and a side end surface at each of the rectangular short sides, a side end surface at a rectangular long side of the gallium nitride-based compound semiconductor layer corresponds to a plane direction of A-plane in a gallium nitride single crystal lattice, and -a the side end surface of the rectangular long side of the gallium nitride-based compound semiconductor layer corresponding to a plane direction of A- pl ane is inclined with respect to a principle surface of the substrate such that a cross sectional area of the gallium nitride-based semiconductor layer parallel to the principle substrate surface becomes smaller towards the principle substrate surface, and wherein an angle 0 between the inclined side surface of the gallium nitride-based compound semiconductor layer and a principle 3 AMENDMENT UNDER 37 C.F.R. § 1.114(c) Attorney Docket No.: Q₁₁₀₇₂₇ Appln. No.: 12/300,302 surface of the substrate is less than 90 0, the method comprising the steps of covering a surface of the gallium nitride-based compound semiconductor layer with a mask having a predetermined pattern; removing the gallium nitride-based compound semiconductor layer at a site to be split into devices so as to reach the substrate; subjecting to a wet etching treatment after removal; and splitting into each device.
: The method for producing a light emitting device according to claim 8, wherein the mask is a photoresist.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a laser.
: The method for producing a light emitting device according to claim 8, wherein the step of removing the gallium nitride-based compound semiconductor layer is performed by a dicing machine.
: The method for producing a light emitting device according to claim 8, wherein the wet etching treatment is performed using orthophosphoric acid.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A c-plane sapphire substrate was used. An AlN buffer layer was formed, followed by a 6 µm undoped GaN underlying layer, a 4 µm periodically Ge-doped n-type GaN contact layer (average carrier concentration 1×10¹⁸ cm⁻³), a 12.5 nm n-type In0.1Ga0.9N clad layer, a multiple quantum well light-emitting layer (5× GaN barrier 16 nm/In0.2Ga0.8N well 2.5 nm, ending with barrier), and a 0.15 µm Mg-doped (8×10¹⁹ cm⁻³) Al0.03Ga0.97N p-type contact layer, all by MOCVD. A 0.25 µm ITO transparent electrode was deposited by sputtering and patterned into a rectangular shape with the long side parallel to the A-plane (11-20) of GaN. Negative and positive electrodes (Cr/Ti/Au structure) were formed. The device external form is 250 µm (short side) × 500 µm (long side). The positive electrode bonding pad (diameter 95 µm) is at the center of the long side, 235 µm from the negative electrode. A photoresist mask was applied, and split grooves were formed by laser (wavelength 266 nm, 50 kHz, 1.6 W, 70 mm/s) to a depth of 20 µm in both X and Y axis directions, followed by wet etching and device splitting.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light emitting device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rectangular chip dimensions (short side × long side) | 250 µm × 500 µm | — |
positive electrode bonding pad diameter | 95 µm | — |
Related documents with shared materials, methods, properties, or citations.
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