Patent
GALLIUM NITRIDE TYPE EPITAXIAL CRYSTAL, METHOD FOR PRODUCTION THEREOF, AND FIELD EFFECT TRANSISTOR
US
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A gallium nitride type epitaxial crystal for field effect transistor, comprising: a base substrate, (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having an opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer and connected to a hole-withdrawing electrode that is provided at an exposed part of the p-conductive type semiconductor crystal la y er, wherein a connection layer is arranged in the opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p- conductive type semiconductor crystal layer, and wherein said connection layer is a p-conductive type crystal comprising a ga llium-itr-ide group III- V type crystal.
The crystal of claim 1, wherein the connection layer has an end extending toward the first buffer layer, and the end does not extend beyond the first buffer layer.
The crystal of claim 1, wherein the connection layer is a crystal layer grown by selective growth on the p-conductive type semiconductor crystal layer exposed at the opening of the nongallium nitride type insulating layer.
The crystal of claim 1, wherein the first buffer layer has an average dislocation density of 1 x 1 05/cm or less, except for the upper part of the opening of the non-gallium nitride type insulating layer.
The crystal of claim 1, wherein at least a part of the second buffer layer is a crystal layer formed by a selective lateral growth method using the gallium nitride type crystal provided in the opening as a base point.
The crystal of claim 1, wherein the insulating layer comprises silicone oxide or silicon nitride.
A field effect transistor formed using the crystal of claim 1, comprising: a gate electrode arranged on an upper part of a gate layer, and a source electrode and a drain electrode, arranged on both sides of the gate electrode and connected to the gate layer by ohmic connection, wherein the opening or the connection layer formed in the opening is arranged so as to face the lower part of the source electrode, or the region between the source side edge of the gate electrode and the source electrodeand w ithdra w ing elec trode Page 7 of 14 App l e. No.: 12/527,116 Attorney Docket No. 9545-9643 1 Reply to Office Action of Claim 9: The field effect transistor of claim 8, wherein the second buffer layer is a crystal layer grown by a lateral growth method.
The gallium nitride type epitaxial crystal and said p-conductive type semiconductor crystal according to claim 1, wherein said connection according to claim 1, wherein said connection layer nitride. according to claim 1, wherein said p-conductive type -V type crystal. according to claim 1, wherein said connection layer layer have the same crystal system.
canceled
A method for producing a gallium nitride type epitaxial crystal, comprising: (i) a step of epitaxial growth of a p-conductive type semiconductor crystal layer onto a base substrate; (ii) a step of formation of an insulating layer on the p-conductive type semiconductor crystal layer; (iii) a step of formation of an opening in the insulating layer; and (iv) a step of growth of a connection layer for electrically connecting the p- conductive type semiconductor crystal layer and a first buffer layer, in the opening using the insulating layer as a mask. withdrawn
The method of claim 11, further comprising: (v) a step of growth of a crystal layer by a selective lateral growth method using the gallium nitride type crystal grown in the opening as a base point on the insulating layer after growth of the connection layer. withdrawn
[[A]] The gallium nitride type epitaxial crystal layer is thicker than said first buffer layer.
The gallium nitride type epitaxial crystal is a p-conductive type crystal comprising gallium
The gallium nitride type epitaxial crystal semiconductor crystal layer comprises a group I II
Layer stacks claimed or described, ordered top of device to substrate.
GaN-type epitaxial crystal structure for FET
Materials described outside the worked examples.
gallium nitride type epitaxial crystal
GaN
high purity first buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density of first buffer layer | ≤ 100000 /cm | high purity first buffer layer |
Related documents with shared materials, methods, properties, or citations.
Patent
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Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride type epitaxial crystal for field effect transistor, comprising: a base substrate, (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having an opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer and connected to a hole-withdrawing electrode that is provided at an exposed part of the p-conductive type semiconductor crystal la y er, wherein a connection layer is arranged in the opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p- conductive type semiconductor crystal layer, and wherein said connection layer is a p-conductive type crystal comprising a ga llium-itr-ide group III- V type crystal.
The crystal of claim 1, wherein the connection layer has an end extending toward the first buffer layer, and the end does not extend beyond the first buffer layer.
The crystal of claim 1, wherein the connection layer is a crystal layer grown by selective growth on the p-conductive type semiconductor crystal layer exposed at the opening of the nongallium nitride type insulating layer.
The crystal of claim 1, wherein the first buffer layer has an average dislocation density of 1 x 1 05/cm or less, except for the upper part of the opening of the non-gallium nitride type insulating layer.
The crystal of claim 1, wherein at least a part of the second buffer layer is a crystal layer formed by a selective lateral growth method using the gallium nitride type crystal provided in the opening as a base point.
The crystal of claim 1, wherein the insulating layer comprises silicone oxide or silicon nitride.
A field effect transistor formed using the crystal of claim 1, comprising: a gate electrode arranged on an upper part of a gate layer, and a source electrode and a drain electrode, arranged on both sides of the gate electrode and connected to the gate layer by ohmic connection, wherein the opening or the connection layer formed in the opening is arranged so as to face the lower part of the source electrode, or the region between the source side edge of the gate electrode and the source electrodeand w ithdra w ing elec trode Page 7 of 14 App l e. No.: 12/527,116 Attorney Docket No. 9545-9643 1 Reply to Office Action of Claim 9: The field effect transistor of claim 8, wherein the second buffer layer is a crystal layer grown by a lateral growth method.
The gallium nitride type epitaxial crystal and said p-conductive type semiconductor crystal according to claim 1, wherein said connection according to claim 1, wherein said connection layer nitride. according to claim 1, wherein said p-conductive type -V type crystal. according to claim 1, wherein said connection layer layer have the same crystal system.
canceled
A method for producing a gallium nitride type epitaxial crystal, comprising: (i) a step of epitaxial growth of a p-conductive type semiconductor crystal layer onto a base substrate; (ii) a step of formation of an insulating layer on the p-conductive type semiconductor crystal layer; (iii) a step of formation of an opening in the insulating layer; and (iv) a step of growth of a connection layer for electrically connecting the p- conductive type semiconductor crystal layer and a first buffer layer, in the opening using the insulating layer as a mask. withdrawn
The method of claim 11, further comprising: (v) a step of growth of a crystal layer by a selective lateral growth method using the gallium nitride type crystal grown in the opening as a base point on the insulating layer after growth of the connection layer. withdrawn
[[A]] The gallium nitride type epitaxial crystal layer is thicker than said first buffer layer.
The gallium nitride type epitaxial crystal is a p-conductive type crystal comprising gallium
The gallium nitride type epitaxial crystal semiconductor crystal layer comprises a group I II
Layer stacks claimed or described, ordered top of device to substrate.
GaN-type epitaxial crystal structure for FET
Materials described outside the worked examples.
gallium nitride type epitaxial crystal
GaN
high purity first buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density of first buffer layer | ≤ 100000 /cm | high purity first buffer layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride type epitaxial crystal for field effect transistor, comprising: a base substrate, (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having an opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer and connected to a hole-withdrawing electrode that is provided at an exposed part of the p-conductive type semiconductor crystal la y er, wherein a connection layer is arranged in the opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p- conductive type semiconductor crystal layer, and wherein said connection layer is a p-conductive type crystal comprising a ga llium-itr-ide group III- V type crystal.
The crystal of claim 1, wherein the connection layer has an end extending toward the first buffer layer, and the end does not extend beyond the first buffer layer.
The crystal of claim 1, wherein the connection layer is a crystal layer grown by selective growth on the p-conductive type semiconductor crystal layer exposed at the opening of the nongallium nitride type insulating layer.
The crystal of claim 1, wherein the first buffer layer has an average dislocation density of 1 x 1 05/cm or less, except for the upper part of the opening of the non-gallium nitride type insulating layer.
The crystal of claim 1, wherein at least a part of the second buffer layer is a crystal layer formed by a selective lateral growth method using the gallium nitride type crystal provided in the opening as a base point.
The crystal of claim 1, wherein the insulating layer comprises silicone oxide or silicon nitride.
A field effect transistor formed using the crystal of claim 1, comprising: a gate electrode arranged on an upper part of a gate layer, and a source electrode and a drain electrode, arranged on both sides of the gate electrode and connected to the gate layer by ohmic connection, wherein the opening or the connection layer formed in the opening is arranged so as to face the lower part of the source electrode, or the region between the source side edge of the gate electrode and the source electrodeand w ithdra w ing elec trode Page 7 of 14 App l e. No.: 12/527,116 Attorney Docket No. 9545-9643 1 Reply to Office Action of Claim 9: The field effect transistor of claim 8, wherein the second buffer layer is a crystal layer grown by a lateral growth method.
The gallium nitride type epitaxial crystal and said p-conductive type semiconductor crystal according to claim 1, wherein said connection according to claim 1, wherein said connection layer nitride. according to claim 1, wherein said p-conductive type -V type crystal. according to claim 1, wherein said connection layer layer have the same crystal system.
canceled
A method for producing a gallium nitride type epitaxial crystal, comprising: (i) a step of epitaxial growth of a p-conductive type semiconductor crystal layer onto a base substrate; (ii) a step of formation of an insulating layer on the p-conductive type semiconductor crystal layer; (iii) a step of formation of an opening in the insulating layer; and (iv) a step of growth of a connection layer for electrically connecting the p- conductive type semiconductor crystal layer and a first buffer layer, in the opening using the insulating layer as a mask. withdrawn
The method of claim 11, further comprising: (v) a step of growth of a crystal layer by a selective lateral growth method using the gallium nitride type crystal grown in the opening as a base point on the insulating layer after growth of the connection layer. withdrawn
[[A]] The gallium nitride type epitaxial crystal layer is thicker than said first buffer layer.
The gallium nitride type epitaxial crystal is a p-conductive type crystal comprising gallium
The gallium nitride type epitaxial crystal semiconductor crystal layer comprises a group I II
Layer stacks claimed or described, ordered top of device to substrate.
GaN-type epitaxial crystal structure for FET
Materials described outside the worked examples.
gallium nitride type epitaxial crystal
GaN
high purity first buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density of first buffer layer | ≤ 100000 /cm | high purity first buffer layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride type epitaxial crystal for field effect transistor, comprising: a base substrate, (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having an opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer and connected to a hole-withdrawing electrode that is provided at an exposed part of the p-conductive type semiconductor crystal la y er, wherein a connection layer is arranged in the opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p- conductive type semiconductor crystal layer, and wherein said connection layer is a p-conductive type crystal comprising a ga llium-itr-ide group III- V type crystal.
The crystal of claim 1, wherein the connection layer has an end extending toward the first buffer layer, and the end does not extend beyond the first buffer layer.
The crystal of claim 1, wherein the connection layer is a crystal layer grown by selective growth on the p-conductive type semiconductor crystal layer exposed at the opening of the nongallium nitride type insulating layer.
The crystal of claim 1, wherein the first buffer layer has an average dislocation density of 1 x 1 05/cm or less, except for the upper part of the opening of the non-gallium nitride type insulating layer.
The crystal of claim 1, wherein at least a part of the second buffer layer is a crystal layer formed by a selective lateral growth method using the gallium nitride type crystal provided in the opening as a base point.
The crystal of claim 1, wherein the insulating layer comprises silicone oxide or silicon nitride.
A field effect transistor formed using the crystal of claim 1, comprising: a gate electrode arranged on an upper part of a gate layer, and a source electrode and a drain electrode, arranged on both sides of the gate electrode and connected to the gate layer by ohmic connection, wherein the opening or the connection layer formed in the opening is arranged so as to face the lower part of the source electrode, or the region between the source side edge of the gate electrode and the source electrodeand w ithdra w ing elec trode Page 7 of 14 App l e. No.: 12/527,116 Attorney Docket No. 9545-9643 1 Reply to Office Action of Claim 9: The field effect transistor of claim 8, wherein the second buffer layer is a crystal layer grown by a lateral growth method.
The gallium nitride type epitaxial crystal and said p-conductive type semiconductor crystal according to claim 1, wherein said connection according to claim 1, wherein said connection layer nitride. according to claim 1, wherein said p-conductive type -V type crystal. according to claim 1, wherein said connection layer layer have the same crystal system.
canceled
A method for producing a gallium nitride type epitaxial crystal, comprising: (i) a step of epitaxial growth of a p-conductive type semiconductor crystal layer onto a base substrate; (ii) a step of formation of an insulating layer on the p-conductive type semiconductor crystal layer; (iii) a step of formation of an opening in the insulating layer; and (iv) a step of growth of a connection layer for electrically connecting the p- conductive type semiconductor crystal layer and a first buffer layer, in the opening using the insulating layer as a mask. withdrawn
The method of claim 11, further comprising: (v) a step of growth of a crystal layer by a selective lateral growth method using the gallium nitride type crystal grown in the opening as a base point on the insulating layer after growth of the connection layer. withdrawn
[[A]] The gallium nitride type epitaxial crystal layer is thicker than said first buffer layer.
The gallium nitride type epitaxial crystal is a p-conductive type crystal comprising gallium
The gallium nitride type epitaxial crystal semiconductor crystal layer comprises a group I II
Layer stacks claimed or described, ordered top of device to substrate.
GaN-type epitaxial crystal structure for FET
Materials described outside the worked examples.
gallium nitride type epitaxial crystal
GaN
high purity first buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density of first buffer layer | ≤ 100000 /cm | high purity first buffer layer |
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