Patent
US 7,521,339OF THE INVENTION
Kensaku Motoki
US
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Patent
Atlas literature
Patent
US 7,521,339Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-33 Claim 34. A method of making a hexagonal, n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate, a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of GaN n type, hexagonal single crystal GaN, said method further comprising a cutting step of cutting said ingot into a plurality of sheets.
A method of making a hexagonal. n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of G a N n type, hexagonal single crystal GaN, said method further comprising a cleaving step of cleaving said ingot into a plurality of sheets.
A method of making a crystal substrate as claimed in claim 35 wherein said crystal is grown according to an HVPE method.
SGRDC\314878.1 U. S. Patent Application No. 11/643,875 Attorney Docket No. 033035 M 034.3 Page 3 Claim 36. A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cutting step of cutting said ingot into a plurality of sheets.
A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of G aN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cleaving step of cleaving said ingot into a plurality of sheets.
Claims 38-58 Claim 59. A method of making a crystal substrate as claimed in claim 34 wherein said crystal is grown according to an HVPE method.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
GaN single crystal substrate fabrication: a GaAs substrate is used as the base, a mask layer with a plurality of opening windows is formed on its (111) plane, and an epitaxial GaN layer is grown by HVPE on the mask layer. GaN nucleates in the opening windows and laterally grows above the mask layer, reducing crystal defects such as dislocation. The process may include a buffer layer forming step and a lower epitaxial layer growing step before the mask layer formation. The epitaxial layer is grown thick to form an ingot, which is then cut or cleaved into multiple GaN single crystal substrate sheets.
Layer stacks claimed or described, ordered top of device to substrate.
GaN single crystal substrate
Materials described outside the worked examples.
AlN buffer layer
AlN
SiO₂ mask
SiO₂
Si₃N₄ mask
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–0.3 atm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,521,339Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-33 Claim 34. A method of making a hexagonal, n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate, a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of GaN n type, hexagonal single crystal GaN, said method further comprising a cutting step of cutting said ingot into a plurality of sheets.
A method of making a hexagonal. n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of G a N n type, hexagonal single crystal GaN, said method further comprising a cleaving step of cleaving said ingot into a plurality of sheets.
A method of making a crystal substrate as claimed in claim 35 wherein said crystal is grown according to an HVPE method.
SGRDC\314878.1 U. S. Patent Application No. 11/643,875 Attorney Docket No. 033035 M 034.3 Page 3 Claim 36. A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cutting step of cutting said ingot into a plurality of sheets.
A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of G aN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cleaving step of cleaving said ingot into a plurality of sheets.
Claims 38-58 Claim 59. A method of making a crystal substrate as claimed in claim 34 wherein said crystal is grown according to an HVPE method.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
GaN single crystal substrate fabrication: a GaAs substrate is used as the base, a mask layer with a plurality of opening windows is formed on its (111) plane, and an epitaxial GaN layer is grown by HVPE on the mask layer. GaN nucleates in the opening windows and laterally grows above the mask layer, reducing crystal defects such as dislocation. The process may include a buffer layer forming step and a lower epitaxial layer growing step before the mask layer formation. The epitaxial layer is grown thick to form an ingot, which is then cut or cleaved into multiple GaN single crystal substrate sheets.
Layer stacks claimed or described, ordered top of device to substrate.
GaN single crystal substrate
Materials described outside the worked examples.
AlN buffer layer
AlN
SiO₂ mask
SiO₂
Si₃N₄ mask
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–0.3 atm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,521,339Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-33 Claim 34. A method of making a hexagonal, n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate, a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of GaN n type, hexagonal single crystal GaN, said method further comprising a cutting step of cutting said ingot into a plurality of sheets.
A method of making a hexagonal. n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of G a N n type, hexagonal single crystal GaN, said method further comprising a cleaving step of cleaving said ingot into a plurality of sheets.
A method of making a crystal substrate as claimed in claim 35 wherein said crystal is grown according to an HVPE method.
SGRDC\314878.1 U. S. Patent Application No. 11/643,875 Attorney Docket No. 033035 M 034.3 Page 3 Claim 36. A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cutting step of cutting said ingot into a plurality of sheets.
A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of G aN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cleaving step of cleaving said ingot into a plurality of sheets.
Claims 38-58 Claim 59. A method of making a crystal substrate as claimed in claim 34 wherein said crystal is grown according to an HVPE method.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
GaN single crystal substrate fabrication: a GaAs substrate is used as the base, a mask layer with a plurality of opening windows is formed on its (111) plane, and an epitaxial GaN layer is grown by HVPE on the mask layer. GaN nucleates in the opening windows and laterally grows above the mask layer, reducing crystal defects such as dislocation. The process may include a buffer layer forming step and a lower epitaxial layer growing step before the mask layer formation. The epitaxial layer is grown thick to form an ingot, which is then cut or cleaved into multiple GaN single crystal substrate sheets.
Layer stacks claimed or described, ordered top of device to substrate.
GaN single crystal substrate
Materials described outside the worked examples.
AlN buffer layer
AlN
SiO₂ mask
SiO₂
Si₃N₄ mask
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–0.3 atm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,521,339Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-33 Claim 34. A method of making a hexagonal, n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate, a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of GaN n type, hexagonal single crystal GaN, said method further comprising a cutting step of cutting said ingot into a plurality of sheets.
A method of making a hexagonal. n type GaN single crystal substrate comprising: a mask layer forming step of forming on a 111 plane of a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other; and an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN, wherein said epitaxial layer is grown in said epitaxial layer growing step so as to form an ingot of G a N n type, hexagonal single crystal GaN, said method further comprising a cleaving step of cleaving said ingot into a plurality of sheets.
A method of making a crystal substrate as claimed in claim 35 wherein said crystal is grown according to an HVPE method.
SGRDC\314878.1 U. S. Patent Application No. 11/643,875 Attorney Docket No. 033035 M 034.3 Page 3 Claim 36. A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cutting step of cutting said ingot into a plurality of sheets.
A method of making a GaN single crystal substrate comprising: an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of G aN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cleaving step of cleaving said ingot into a plurality of sheets.
Claims 38-58 Claim 59. A method of making a crystal substrate as claimed in claim 34 wherein said crystal is grown according to an HVPE method.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
GaN single crystal substrate fabrication: a GaAs substrate is used as the base, a mask layer with a plurality of opening windows is formed on its (111) plane, and an epitaxial GaN layer is grown by HVPE on the mask layer. GaN nucleates in the opening windows and laterally grows above the mask layer, reducing crystal defects such as dislocation. The process may include a buffer layer forming step and a lower epitaxial layer growing step before the mask layer formation. The epitaxial layer is grown thick to form an ingot, which is then cut or cleaved into multiple GaN single crystal substrate sheets.
Layer stacks claimed or described, ordered top of device to substrate.
GaN single crystal substrate
Materials described outside the worked examples.
AlN buffer layer
AlN
SiO₂ mask
SiO₂
Si₃N₄ mask
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–0.3 atm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
| 20–40 minutes |
| — |
Thickness | 500–1200 Å | — |
Thickness | 100–1000 Å | — |
Thickness | 100–500 nm | — |
Thickness | 50–120 nm | — |
Thickness | 500–1200 nm | — |
Flow Rate | 10–100 sccm | — |
Thickness | 20–30 mm | — |
Thickness | 2–50 Um | — |
Pressure | 0.0001 atm | — |
Duration | ≥ 1 hours | — |
| 20–40 minutes |
| — |
Thickness | 500–1200 Å | — |
Thickness | 100–1000 Å | — |
Thickness | 100–500 nm | — |
Thickness | 50–120 nm | — |
Thickness | 500–1200 nm | — |
Flow Rate | 10–100 sccm | — |
Thickness | 20–30 mm | — |
Thickness | 2–50 Um | — |
Pressure | 0.0001 atm | — |
Duration | ≥ 1 hours | — |
| 20–40 minutes |
| — |
Thickness | 500–1200 Å | — |
Thickness | 100–1000 Å | — |
Thickness | 100–500 nm | — |
Thickness | 50–120 nm | — |
Thickness | 500–1200 nm | — |
Flow Rate | 10–100 sccm | — |
Thickness | 20–30 mm | — |
Thickness | 2–50 Um | — |
Pressure | 0.0001 atm | — |
Duration | ≥ 1 hours | — |
| 20–40 minutes |
| — |
Thickness | 500–1200 Å | — |
Thickness | 100–1000 Å | — |
Thickness | 100–500 nm | — |
Thickness | 50–120 nm | — |
Thickness | 500–1200 nm | — |
Flow Rate | 10–100 sccm | — |
Thickness | 20–30 mm | — |
Thickness | 2–50 Um | — |
Pressure | 0.0001 atm | — |
Duration | ≥ 1 hours | — |