Patent
US 11,257,676GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE
Hideaki MATSUYAMA
US
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Patent
Atlas literature
Patent
US 11,257,676Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes two or more kinds of metal elements, wherein a first metal element includes a substantially uniform concentration; and a transition layer that is provided in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
The gallium nitride based semiconductor device according to Claim 1, wherein the insulating layer is a metal oxide layer, and the metal oxide layer includes at least any one of a silicon oxide layer and an aluminum oxide layer. Original
The gallium nitride based semiconductor device according to Claim 1, wherein a thickness of the transition layer is equal to or less than 0.5 nm. Original
The gallium nitride based semiconductor device according to Claim 1, wherein on an interface of the gallium nitride based semiconductor layer on which the insulating layer is laminated, a crystal surface in which atoms of elements included in the gallium nitride based semiconductor layer are regularly arranged has a roughness in a depth direction perpendicular to the interface of the gallium nitride based semiconductor layer, and a height of the roughness in a measurement region that has a length of 30 nm in a direction parallel to the interface of the gallium nitride based semiconductor layer is equal to or less than 6 atomic layers. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a gate electrode in contact with the insulating layer, wherein the insulating layer is provided on a surface of the gallium nitride layer, the transition layer is provided in the vicinity of a boundary between the surface of the gallium nitride based semiconductor layer and the insulating layer, and the gallium nitride based semiconductor layer includes a channel region extending along the surface of the gallium nitride based semiconductor layer, the channel region in contact with the transition layer. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a trench provided in the gallium nitride based semiconductor layer, the insulating layer further provided on an inner wall of the trench; and a gate electrode in contact with the insulating layer, wherein the transition layer is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer provided on the inner wall of the trench, and the gallium nitride based semiconductor layer includes a channel region extending along the inner wall of the trench, the channel region in contact with the transition layer. Previously presented
Canceled
(Withdrawn-Currently Amended) A manufacturing method of a gallium nitride based semiconductor device, comprising: forming a gallium nitride based semiconductor layer of a first conductivity type; forming a layer containing two or more kinds of metal elements on the gallium nitride based semiconductor layer as an insulating layer; and forming a silicon oxide layer on the metal element containing layer, thereby a transition layer is formed in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer, the transition layer being constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm: and wherein in the insulating layer, a first metal element has a substantially uniform concentration; in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the forming the metal element containing layer includes: forming a metal layer; and oxidizing the metal layer in an atmosphere containing oxygen. Withdrawn
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the metal element is selected from the group consisting of typical metal elements, Si, Ge, Sn, Pb, Al, Ga, In, Tl, and transition metal elements. Withdrawn
Claims 11-18 Canceled
Canceled
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, wherein the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the first metal element in the insulating layer is half of the substantially uniform concentration of the first metal element. Previously presented
The gallium nitride based semiconductor device according to Claim 23, wherein concentrations for purposes of determining depth positions are based on atomic composition distributions fit by an arctan function. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, and a second metal element provided between the gallium nitride based semiconductor layer and the insulating layer; wherein a thickness of the transition layer is less than 0.75 nm, and the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the second metal element is half of a highest concentration of the second metal element on a side of the depth position of the highest concentration of the second metal element that is towards the gallium nitride based semiconductor layer. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm + the insulating layer is a metal oxide layer including an aluminum oxide layer and a silicon oxide layer that is at least partially positioned on the aluminum oxide layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with transition layer
GaN MOSFET with MOS structure
Materials described outside the worked examples.
gallium nitride based semiconductor layer
GaN
insulating layer with two or more kinds of metal elements
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum field effect mobility (lower bound, claim 20) | ≥ 48 cm2/V-s | — |
maximum field effect mobility (lower bound, claim 21) | ≥ 96 cm2/V-s |
Table 1
sh ow n in Table 1.
p. 9
Table 2
Table 2 summarizes a relation between the thi ck ness of the transi
p. 16
Table 3
Also, items (A) to (E) for the first to third samples are shown together in Table 3.
p. 25
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,257,676Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes two or more kinds of metal elements, wherein a first metal element includes a substantially uniform concentration; and a transition layer that is provided in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
The gallium nitride based semiconductor device according to Claim 1, wherein the insulating layer is a metal oxide layer, and the metal oxide layer includes at least any one of a silicon oxide layer and an aluminum oxide layer. Original
The gallium nitride based semiconductor device according to Claim 1, wherein a thickness of the transition layer is equal to or less than 0.5 nm. Original
The gallium nitride based semiconductor device according to Claim 1, wherein on an interface of the gallium nitride based semiconductor layer on which the insulating layer is laminated, a crystal surface in which atoms of elements included in the gallium nitride based semiconductor layer are regularly arranged has a roughness in a depth direction perpendicular to the interface of the gallium nitride based semiconductor layer, and a height of the roughness in a measurement region that has a length of 30 nm in a direction parallel to the interface of the gallium nitride based semiconductor layer is equal to or less than 6 atomic layers. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a gate electrode in contact with the insulating layer, wherein the insulating layer is provided on a surface of the gallium nitride layer, the transition layer is provided in the vicinity of a boundary between the surface of the gallium nitride based semiconductor layer and the insulating layer, and the gallium nitride based semiconductor layer includes a channel region extending along the surface of the gallium nitride based semiconductor layer, the channel region in contact with the transition layer. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a trench provided in the gallium nitride based semiconductor layer, the insulating layer further provided on an inner wall of the trench; and a gate electrode in contact with the insulating layer, wherein the transition layer is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer provided on the inner wall of the trench, and the gallium nitride based semiconductor layer includes a channel region extending along the inner wall of the trench, the channel region in contact with the transition layer. Previously presented
Canceled
(Withdrawn-Currently Amended) A manufacturing method of a gallium nitride based semiconductor device, comprising: forming a gallium nitride based semiconductor layer of a first conductivity type; forming a layer containing two or more kinds of metal elements on the gallium nitride based semiconductor layer as an insulating layer; and forming a silicon oxide layer on the metal element containing layer, thereby a transition layer is formed in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer, the transition layer being constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm: and wherein in the insulating layer, a first metal element has a substantially uniform concentration; in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the forming the metal element containing layer includes: forming a metal layer; and oxidizing the metal layer in an atmosphere containing oxygen. Withdrawn
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the metal element is selected from the group consisting of typical metal elements, Si, Ge, Sn, Pb, Al, Ga, In, Tl, and transition metal elements. Withdrawn
Claims 11-18 Canceled
Canceled
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, wherein the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the first metal element in the insulating layer is half of the substantially uniform concentration of the first metal element. Previously presented
The gallium nitride based semiconductor device according to Claim 23, wherein concentrations for purposes of determining depth positions are based on atomic composition distributions fit by an arctan function. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, and a second metal element provided between the gallium nitride based semiconductor layer and the insulating layer; wherein a thickness of the transition layer is less than 0.75 nm, and the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the second metal element is half of a highest concentration of the second metal element on a side of the depth position of the highest concentration of the second metal element that is towards the gallium nitride based semiconductor layer. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm + the insulating layer is a metal oxide layer including an aluminum oxide layer and a silicon oxide layer that is at least partially positioned on the aluminum oxide layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with transition layer
GaN MOSFET with MOS structure
Materials described outside the worked examples.
gallium nitride based semiconductor layer
GaN
insulating layer with two or more kinds of metal elements
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum field effect mobility (lower bound, claim 20) | ≥ 48 cm2/V-s | — |
maximum field effect mobility (lower bound, claim 21) | ≥ 96 cm2/V-s |
Table 1
sh ow n in Table 1.
p. 9
Table 2
Table 2 summarizes a relation between the thi ck ness of the transi
p. 16
Table 3
Also, items (A) to (E) for the first to third samples are shown together in Table 3.
p. 25
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,257,676Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes two or more kinds of metal elements, wherein a first metal element includes a substantially uniform concentration; and a transition layer that is provided in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
The gallium nitride based semiconductor device according to Claim 1, wherein the insulating layer is a metal oxide layer, and the metal oxide layer includes at least any one of a silicon oxide layer and an aluminum oxide layer. Original
The gallium nitride based semiconductor device according to Claim 1, wherein a thickness of the transition layer is equal to or less than 0.5 nm. Original
The gallium nitride based semiconductor device according to Claim 1, wherein on an interface of the gallium nitride based semiconductor layer on which the insulating layer is laminated, a crystal surface in which atoms of elements included in the gallium nitride based semiconductor layer are regularly arranged has a roughness in a depth direction perpendicular to the interface of the gallium nitride based semiconductor layer, and a height of the roughness in a measurement region that has a length of 30 nm in a direction parallel to the interface of the gallium nitride based semiconductor layer is equal to or less than 6 atomic layers. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a gate electrode in contact with the insulating layer, wherein the insulating layer is provided on a surface of the gallium nitride layer, the transition layer is provided in the vicinity of a boundary between the surface of the gallium nitride based semiconductor layer and the insulating layer, and the gallium nitride based semiconductor layer includes a channel region extending along the surface of the gallium nitride based semiconductor layer, the channel region in contact with the transition layer. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a trench provided in the gallium nitride based semiconductor layer, the insulating layer further provided on an inner wall of the trench; and a gate electrode in contact with the insulating layer, wherein the transition layer is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer provided on the inner wall of the trench, and the gallium nitride based semiconductor layer includes a channel region extending along the inner wall of the trench, the channel region in contact with the transition layer. Previously presented
Canceled
(Withdrawn-Currently Amended) A manufacturing method of a gallium nitride based semiconductor device, comprising: forming a gallium nitride based semiconductor layer of a first conductivity type; forming a layer containing two or more kinds of metal elements on the gallium nitride based semiconductor layer as an insulating layer; and forming a silicon oxide layer on the metal element containing layer, thereby a transition layer is formed in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer, the transition layer being constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm: and wherein in the insulating layer, a first metal element has a substantially uniform concentration; in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the forming the metal element containing layer includes: forming a metal layer; and oxidizing the metal layer in an atmosphere containing oxygen. Withdrawn
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the metal element is selected from the group consisting of typical metal elements, Si, Ge, Sn, Pb, Al, Ga, In, Tl, and transition metal elements. Withdrawn
Claims 11-18 Canceled
Canceled
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, wherein the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the first metal element in the insulating layer is half of the substantially uniform concentration of the first metal element. Previously presented
The gallium nitride based semiconductor device according to Claim 23, wherein concentrations for purposes of determining depth positions are based on atomic composition distributions fit by an arctan function. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, and a second metal element provided between the gallium nitride based semiconductor layer and the insulating layer; wherein a thickness of the transition layer is less than 0.75 nm, and the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the second metal element is half of a highest concentration of the second metal element on a side of the depth position of the highest concentration of the second metal element that is towards the gallium nitride based semiconductor layer. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm + the insulating layer is a metal oxide layer including an aluminum oxide layer and a silicon oxide layer that is at least partially positioned on the aluminum oxide layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with transition layer
GaN MOSFET with MOS structure
Materials described outside the worked examples.
gallium nitride based semiconductor layer
GaN
insulating layer with two or more kinds of metal elements
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum field effect mobility (lower bound, claim 20) | ≥ 48 cm2/V-s | — |
maximum field effect mobility (lower bound, claim 21) | ≥ 96 cm2/V-s |
Table 1
sh ow n in Table 1.
p. 9
Table 2
Table 2 summarizes a relation between the thi ck ness of the transi
p. 16
Table 3
Also, items (A) to (E) for the first to third samples are shown together in Table 3.
p. 25
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,257,676Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes two or more kinds of metal elements, wherein a first metal element includes a substantially uniform concentration; and a transition layer that is provided in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
The gallium nitride based semiconductor device according to Claim 1, wherein the insulating layer is a metal oxide layer, and the metal oxide layer includes at least any one of a silicon oxide layer and an aluminum oxide layer. Original
The gallium nitride based semiconductor device according to Claim 1, wherein a thickness of the transition layer is equal to or less than 0.5 nm. Original
The gallium nitride based semiconductor device according to Claim 1, wherein on an interface of the gallium nitride based semiconductor layer on which the insulating layer is laminated, a crystal surface in which atoms of elements included in the gallium nitride based semiconductor layer are regularly arranged has a roughness in a depth direction perpendicular to the interface of the gallium nitride based semiconductor layer, and a height of the roughness in a measurement region that has a length of 30 nm in a direction parallel to the interface of the gallium nitride based semiconductor layer is equal to or less than 6 atomic layers. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a gate electrode in contact with the insulating layer, wherein the insulating layer is provided on a surface of the gallium nitride layer, the transition layer is provided in the vicinity of a boundary between the surface of the gallium nitride based semiconductor layer and the insulating layer, and the gallium nitride based semiconductor layer includes a channel region extending along the surface of the gallium nitride based semiconductor layer, the channel region in contact with the transition layer. Previously presented
The gallium nitride based semiconductor device according to Claim 1, further comprising: a trench provided in the gallium nitride based semiconductor layer, the insulating layer further provided on an inner wall of the trench; and a gate electrode in contact with the insulating layer, wherein the transition layer is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer provided on the inner wall of the trench, and the gallium nitride based semiconductor layer includes a channel region extending along the inner wall of the trench, the channel region in contact with the transition layer. Previously presented
Canceled
(Withdrawn-Currently Amended) A manufacturing method of a gallium nitride based semiconductor device, comprising: forming a gallium nitride based semiconductor layer of a first conductivity type; forming a layer containing two or more kinds of metal elements on the gallium nitride based semiconductor layer as an insulating layer; and forming a silicon oxide layer on the metal element containing layer, thereby a transition layer is formed in [[the]] a vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer, the transition layer being constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm: and wherein in the insulating layer, a first metal element has a substantially uniform concentration; in the insulating layer, a second metal element has a concentration that is lower than the substantially uniform concentration of the first metal element, in the transition layer, a first ratio of a number of nitrogen atoms to a number of gallium atoms is smaller than a second ratio of a number of nitrogen atoms to a number of gallium atoms in the gallium nitride based semiconductor layer, and (a) when the concentration of the second metal element included in the insulating layer forms a peak with respect to a depth distribution of the second metal element in the insulating layer, and [[a]] the concentration of the second metal element on either side of the peak [[which]] decreases as a distance from the peak increases, then a first ratio of a number of oxygen atoms to a number of atoms of the second metal element in the transition layer is larger than a second ratio of a number of oxygen atoms to a number of atoms of the second metal element [[atoms]] at a position of the peak; or (b) when the concentration of the second metal element included in the insulating layer does not form [[a]] the peak with respect to the depth distribution of the second metal element in the insulating layer, then a third ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the transition layer is larger than a fourth ratio of a number of oxygen atoms to a number of atoms of the first metal element [[atoms]] in the insulating layer. Currently amended
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the forming the metal element containing layer includes: forming a metal layer; and oxidizing the metal layer in an atmosphere containing oxygen. Withdrawn
(Withdrawn-Previously Presented) The manufacturing method of the gallium nitride based semiconductor device according to Claim 9, wherein the metal element is selected from the group consisting of typical metal elements, Si, Ge, Sn, Pb, Al, Ga, In, Tl, and transition metal elements. Withdrawn
Claims 11-18 Canceled
Canceled
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm, wherein the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the first metal element in the insulating layer is half of the substantially uniform concentration of the first metal element. Previously presented
The gallium nitride based semiconductor device according to Claim 23, wherein concentrations for purposes of determining depth positions are based on atomic composition distributions fit by an arctan function. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, and a second metal element provided between the gallium nitride based semiconductor layer and the insulating layer; wherein a thickness of the transition layer is less than 0.75 nm, and the thickness of the transition layer is defined as a distance between (i) a depth position where a concentration of nitrogen in the gallium nitride based semiconductor layer is half of the substantially uniform concentration of nitrogen and (ii) a depth position where a concentration of the second metal element is half of a highest concentration of the second metal element on a side of the depth position of the highest concentration of the second metal element that is towards the gallium nitride based semiconductor layer. Previously presented
A gallium nitride based semiconductor device, comprising: a gallium nitride based semiconductor layer of a first conductivity type that includes a substantially uniform concentration of nitrogen; an insulating layer that is provided on the gallium nitride based semiconductor layer and includes a substantially uniform concentration of a first metal element; and a transition layer that is provided in the vicinity of a boundary between the gallium nitride based semiconductor layer and the insulating layer and is constituted of elements of the gallium nitride based semiconductor layer and of the insulating layer, wherein a thickness of the transition layer is less than 0.75 nm + the insulating layer is a metal oxide layer including an aluminum oxide layer and a silicon oxide layer that is at least partially positioned on the aluminum oxide layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with transition layer
GaN MOSFET with MOS structure
Materials described outside the worked examples.
gallium nitride based semiconductor layer
GaN
insulating layer with two or more kinds of metal elements
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum field effect mobility (lower bound, claim 20) | ≥ 48 cm2/V-s | — |
maximum field effect mobility (lower bound, claim 21) | ≥ 96 cm2/V-s |
Table 1
sh ow n in Table 1.
p. 9
Table 2
Table 2 summarizes a relation between the thi ck ness of the transi
p. 16
Table 3
Also, items (A) to (E) for the first to third samples are shown together in Table 3.
p. 25
Related documents with shared materials, methods, properties, or citations.
trench-gate GaN MOSFET
lateral MOSFET
transition layer
aluminum oxide layer
Al₂O₃
silicon oxide layer
SiO₂
aluminum containing layer
| — |
Thickness | ≤ 1.5 nm | — |
— | ≤ 720.7 eV | — |
— | ≤ 0.6 eV | — |
— | ≤ 721 eV | — |
— | ≤ 0.7 eV | — |
— | ≤ 721.1 eV | — |
— | ≤ 0.3 eV | — |
Thickness | ≤ 0.75 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.25 nm | — |
Thickness | ≥ 96 cm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 48 cm | — |
trench-gate GaN MOSFET
lateral MOSFET
transition layer
aluminum oxide layer
Al₂O₃
silicon oxide layer
SiO₂
aluminum containing layer
| — |
Thickness | ≤ 1.5 nm | — |
— | ≤ 720.7 eV | — |
— | ≤ 0.6 eV | — |
— | ≤ 721 eV | — |
— | ≤ 0.7 eV | — |
— | ≤ 721.1 eV | — |
— | ≤ 0.3 eV | — |
Thickness | ≤ 0.75 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.25 nm | — |
Thickness | ≥ 96 cm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 48 cm | — |
trench-gate GaN MOSFET
lateral MOSFET
transition layer
aluminum oxide layer
Al₂O₃
silicon oxide layer
SiO₂
aluminum containing layer
| — |
Thickness | ≤ 1.5 nm | — |
— | ≤ 720.7 eV | — |
— | ≤ 0.6 eV | — |
— | ≤ 721 eV | — |
— | ≤ 0.7 eV | — |
— | ≤ 721.1 eV | — |
— | ≤ 0.3 eV | — |
Thickness | ≤ 0.75 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.25 nm | — |
Thickness | ≥ 96 cm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 48 cm | — |
trench-gate GaN MOSFET
lateral MOSFET
transition layer
aluminum oxide layer
Al₂O₃
silicon oxide layer
SiO₂
aluminum containing layer
| — |
Thickness | ≤ 1.5 nm | — |
— | ≤ 720.7 eV | — |
— | ≤ 0.6 eV | — |
— | ≤ 721 eV | — |
— | ≤ 0.7 eV | — |
— | ≤ 721.1 eV | — |
— | ≤ 0.3 eV | — |
Thickness | ≤ 0.75 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.25 nm | — |
Thickness | ≥ 96 cm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 48 cm | — |