Patent
US 8,247,843GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Liberty L. Gunter, Kanin Chu, Charles R. Eddy, Jr., Theodore D. Moustakas et al.
US
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Patent
Atlas literature
Patent
US 8,247,843Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 8 is a top plan view SEM picture of a completed GaN PBT device fabricated in accordance with an embodiment of the present invention.
Figure 9 (a and b) are SEM pictures showing a GaN PBT device fabricated in accordance with an embodiment of the present invention, with Figure 9a showing a 1:1 finger pitch, and Figure 9b a 1:3 finger pitch.
Figure 10 is a graph showing a I-V characteristic curve of a GaN PBT device fabricated in accordance with an embodiment of the present invention. [0019] Note that the various features shown in the Figures are not drawn to any particular scale. Rather, the Figures are drawn to emphasize features and …
Layer stacks claimed or described, ordered top of device to substrate.
etched grooved GaN-based permeable-base transistor (PBT)
Materials described outside the worked examples.
n-type GaN (emitter layer/quasi-substrate)
GaN
silicon nitride
SiN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown_voltage | 50 V | GaNGaNGaN |
cutoff_frequency_fT |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,843Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 8 is a top plan view SEM picture of a completed GaN PBT device fabricated in accordance with an embodiment of the present invention.
Figure 9 (a and b) are SEM pictures showing a GaN PBT device fabricated in accordance with an embodiment of the present invention, with Figure 9a showing a 1:1 finger pitch, and Figure 9b a 1:3 finger pitch.
Figure 10 is a graph showing a I-V characteristic curve of a GaN PBT device fabricated in accordance with an embodiment of the present invention. [0019] Note that the various features shown in the Figures are not drawn to any particular scale. Rather, the Figures are drawn to emphasize features and …
Layer stacks claimed or described, ordered top of device to substrate.
etched grooved GaN-based permeable-base transistor (PBT)
Materials described outside the worked examples.
n-type GaN (emitter layer/quasi-substrate)
GaN
silicon nitride
SiN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown_voltage | 50 V | GaNGaNGaN |
cutoff_frequency_fT |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,843Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 8 is a top plan view SEM picture of a completed GaN PBT device fabricated in accordance with an embodiment of the present invention.
Figure 9 (a and b) are SEM pictures showing a GaN PBT device fabricated in accordance with an embodiment of the present invention, with Figure 9a showing a 1:1 finger pitch, and Figure 9b a 1:3 finger pitch.
Figure 10 is a graph showing a I-V characteristic curve of a GaN PBT device fabricated in accordance with an embodiment of the present invention. [0019] Note that the various features shown in the Figures are not drawn to any particular scale. Rather, the Figures are drawn to emphasize features and …
Layer stacks claimed or described, ordered top of device to substrate.
etched grooved GaN-based permeable-base transistor (PBT)
Materials described outside the worked examples.
n-type GaN (emitter layer/quasi-substrate)
GaN
silicon nitride
SiN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown_voltage | 50 V | GaNGaNGaN |
cutoff_frequency_fT |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,247,843Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 8 is a top plan view SEM picture of a completed GaN PBT device fabricated in accordance with an embodiment of the present invention.
Figure 9 (a and b) are SEM pictures showing a GaN PBT device fabricated in accordance with an embodiment of the present invention, with Figure 9a showing a 1:1 finger pitch, and Figure 9b a 1:3 finger pitch.
Figure 10 is a graph showing a I-V characteristic curve of a GaN PBT device fabricated in accordance with an embodiment of the present invention. [0019] Note that the various features shown in the Figures are not drawn to any particular scale. Rather, the Figures are drawn to emphasize features and …
Layer stacks claimed or described, ordered top of device to substrate.
etched grooved GaN-based permeable-base transistor (PBT)
Materials described outside the worked examples.
n-type GaN (emitter layer/quasi-substrate)
GaN
silicon nitride
SiN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown_voltage | 50 V | GaNGaNGaN |
cutoff_frequency_fT |
Related documents with shared materials, methods, properties, or citations.
Ti/Al/Ni/Au
sapphire substrate
| 134 GHz |
GaNGaNGaN |
maximum_frequency_fmax | 500 GHz | GaNGaNGaN |
transconductance_g12 | 70 mS/mm | GaNGaNGaN |
specific_ohmic_contact_resistivity | 0.000003 ohm.cm² | Ti/Al/Ni/Au |
current_density_Js | 518 mA/mm² | GaNGaNGaN |
collector_current_IC | 140 mA/mm | GaNGaNGaN |
transconductance_gm | 111 mS/mm | GaNGaNGaN |
afm_rms_roughness | 0.45 nm | GaN |
Voltage | 0–5.5 V | — |
Temperature | 0–500 °C | — |
— | ≥ 1 eV | — |
Ti/Al/Ni/Au
sapphire substrate
| 134 GHz |
GaNGaNGaN |
maximum_frequency_fmax | 500 GHz | GaNGaNGaN |
transconductance_g12 | 70 mS/mm | GaNGaNGaN |
specific_ohmic_contact_resistivity | 0.000003 ohm.cm² | Ti/Al/Ni/Au |
current_density_Js | 518 mA/mm² | GaNGaNGaN |
collector_current_IC | 140 mA/mm | GaNGaNGaN |
transconductance_gm | 111 mS/mm | GaNGaNGaN |
afm_rms_roughness | 0.45 nm | GaN |
Voltage | 0–5.5 V | — |
Temperature | 0–500 °C | — |
— | ≥ 1 eV | — |
Ti/Al/Ni/Au
sapphire substrate
| 134 GHz |
GaNGaNGaN |
maximum_frequency_fmax | 500 GHz | GaNGaNGaN |
transconductance_g12 | 70 mS/mm | GaNGaNGaN |
specific_ohmic_contact_resistivity | 0.000003 ohm.cm² | Ti/Al/Ni/Au |
current_density_Js | 518 mA/mm² | GaNGaNGaN |
collector_current_IC | 140 mA/mm | GaNGaNGaN |
transconductance_gm | 111 mS/mm | GaNGaNGaN |
afm_rms_roughness | 0.45 nm | GaN |
Voltage | 0–5.5 V | — |
Temperature | 0–500 °C | — |
— | ≥ 1 eV | — |
Ti/Al/Ni/Au
sapphire substrate
| 134 GHz |
GaNGaNGaN |
maximum_frequency_fmax | 500 GHz | GaNGaNGaN |
transconductance_g12 | 70 mS/mm | GaNGaNGaN |
specific_ohmic_contact_resistivity | 0.000003 ohm.cm² | Ti/Al/Ni/Au |
current_density_Js | 518 mA/mm² | GaNGaNGaN |
collector_current_IC | 140 mA/mm | GaNGaNGaN |
transconductance_gm | 111 mS/mm | GaNGaNGaN |
afm_rms_roughness | 0.45 nm | GaN |
Voltage | 0–5.5 V | — |
Temperature | 0–500 °C | — |
— | ≥ 1 eV | — |