Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
