Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism

Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures

Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect

Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions

A Flexible Kinetic Monte Carlo Framework for GaN Molecular Beam Epitaxy with Adaptive On-the-Fly Barrier Evaluation

Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy

Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism

Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures

Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect

Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions

A Flexible Kinetic Monte Carlo Framework for GaN Molecular Beam Epitaxy with Adaptive On-the-Fly Barrier Evaluation

Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy

Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism

Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures

Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect

Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions

A Flexible Kinetic Monte Carlo Framework for GaN Molecular Beam Epitaxy with Adaptive On-the-Fly Barrier Evaluation

Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy

Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism

Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures

Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect

Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions

A Flexible Kinetic Monte Carlo Framework for GaN Molecular Beam Epitaxy with Adaptive On-the-Fly Barrier Evaluation

Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy