Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions

Jie Zhou; Ashok Dheenan; Jiarui Gong; Carolina Adamo; Patrick Marshall; Moheb Sheikhi; Tsung-Han Tsai; Nathan Wriedt; Clincy Cheung; Shuoyang Qiu; Tien Khee Ng; Qiaoqiang Gan; Gambin Vincent; Boon S. Ooi; Siddharth Rajan; Zhenqiang Ma

doi:10.48550/arxiv.2308.06575

Paper

Atlas literature

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Experimental GrowthExperimental Characterization

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Jie Zhou, Ashok Dheenan, Jiarui Gong, Carolina Adamo et al.

APEX·2022·10.48550/arxiv.2308.06575·arXiv:2308.06575

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

16 preparations1 characterization4 properties2 figures

ExperimentalAl0.3Ga0.7AsStudied MaterialGaAsPStudied Materialβ-Ga₂O₃Studied MaterialGaAsStudied MaterialAl₂O₃Substrate / DielectricAlAsSubstrate / Dielectric

Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions | Matter42 Literature

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

Initial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions

Samples

Monocrystalline AlGaAs/GaAsP/β-Ga₂O₃ n-p-n double heterojunction device stack fabricated by semiconductor grafting, including an epitaxial n-AlGaAs/p-GaAsP nanomembrane bonded onto an n-β-Ga₂O₃ substrate with an ultrathin Al₂O₃ interlayer.

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