Abstract

Hybrid integration of InAs/GaAs quantum dot (QD) single-photon sources (SPSs) into SiN photonic integrated circuits is challenged by refractive-index mismatch. This paper proposes and experimentally demonstrates a coupled crossover waveguide structure that transfers photons from a QD-loaded GaAs photonic crystal nanocavity into an underlying SiN waveguide. The design is numerically optimized with 3D FDTD to achieve high cavity-waveguide and waveguide-waveguide coupling, and fabrication is performed by MBE growth on GaAs followed by lithography, dry/wet etching, and transfer printing. The device exhibits Purcell-enhanced emission, on-chip propagation, and outcoupling through a SiN grating coupler.

Abstract

Hybrid integration of InAs/GaAs quantum dot (QD) single-photon sources (SPSs) into SiN photonic integrated circuits is challenged by refractive-index mismatch. This paper proposes and experimentally demonstrates a coupled crossover waveguide structure that transfers photons from a QD-loaded GaAs photonic crystal nanocavity into an underlying SiN waveguide. The design is numerically optimized with 3D FDTD to achieve high cavity-waveguide and waveguide-waveguide coupling, and fabrication is performed by MBE growth on GaAs followed by lithography, dry/wet etching, and transfer printing. The device exhibits Purcell-enhanced emission, on-chip propagation, and outcoupling through a SiN grating coupler.

Abstract

Hybrid integration of InAs/GaAs quantum dot (QD) single-photon sources (SPSs) into SiN photonic integrated circuits is challenged by refractive-index mismatch. This paper proposes and experimentally demonstrates a coupled crossover waveguide structure that transfers photons from a QD-loaded GaAs photonic crystal nanocavity into an underlying SiN waveguide. The design is numerically optimized with 3D FDTD to achieve high cavity-waveguide and waveguide-waveguide coupling, and fabrication is performed by MBE growth on GaAs followed by lithography, dry/wet etching, and transfer printing. The device exhibits Purcell-enhanced emission, on-chip propagation, and outcoupling through a SiN grating coupler.

Abstract

Hybrid integration of InAs/GaAs quantum dot (QD) single-photon sources (SPSs) into SiN photonic integrated circuits is challenged by refractive-index mismatch. This paper proposes and experimentally demonstrates a coupled crossover waveguide structure that transfers photons from a QD-loaded GaAs photonic crystal nanocavity into an underlying SiN waveguide. The design is numerically optimized with 3D FDTD to achieve high cavity-waveguide and waveguide-waveguide coupling, and fabrication is performed by MBE growth on GaAs followed by lithography, dry/wet etching, and transfer printing. The device exhibits Purcell-enhanced emission, on-chip propagation, and outcoupling through a SiN grating coupler.