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Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum | Matter42 Literature

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational Multiscale

Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

F. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.

arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.

9 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs

GaAs

Studied Material

studied material

Al0.8Ga0.2As

Al0.8Ga0.2As

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational Multiscale

Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

F. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.

arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.

9 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs

GaAs

Studied Material

studied material

Al0.8Ga0.2As

Al0.8Ga0.2As

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational Multiscale

Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

F. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.

arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.

9 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs

GaAs

Studied Material

studied material

Al0.8Ga0.2As

Al0.8Ga0.2As

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational Multiscale

Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

F. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.

arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.

9 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.

8 preparations2 characterizations7 properties5 figures

ExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs

GaAs

Studied Material

studied material

Al0.8Ga0.2As

Al0.8Ga0.2As

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Mode Coupling Energy	Rabi splitting	13.9meV	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Dielectric Constant	GaAs dielectric constant	3.54	GaAs	—		—
Dielectric Constant	Al0.4Ga0.6As dielectric constant	3.3	Al0.4Ga0.6As	—		—
Exciton Energy	exciton resonance	1527.5meV	GaAs	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	51.2%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	22.6%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	12.1%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	40nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep		—
Grating Depth	etched groove depth	90nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	130nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de		—
Grating Pitch	grating periodicity	240nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de	—	—
Grating Pitch	grating periodicity	242nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep	—	—
Grating Pitch	grating periodicity	244nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Mode Coupling Energy	Rabi splitting	13.9meV	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Dielectric Constant	GaAs dielectric constant	3.54	GaAs	—		—
Dielectric Constant	Al0.4Ga0.6As dielectric constant	3.3	Al0.4Ga0.6As	—		—
Exciton Energy	exciton resonance	1527.5meV	GaAs	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	51.2%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	22.6%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	12.1%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	40nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep		—
Grating Depth	etched groove depth	90nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	130nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de		—
Grating Pitch	grating periodicity	240nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de	—	—
Grating Pitch	grating periodicity	242nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep	—	—
Grating Pitch	grating periodicity	244nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Mode Coupling Energy	Rabi splitting	13.9meV	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Dielectric Constant	GaAs dielectric constant	3.54	GaAs	—		—
Dielectric Constant	Al0.4Ga0.6As dielectric constant	3.3	Al0.4Ga0.6As	—		—
Exciton Energy	exciton resonance	1527.5meV	GaAs	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	51.2%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	22.6%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	12.1%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	40nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep		—
Grating Depth	etched groove depth	90nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	130nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de		—
Grating Pitch	grating periodicity	240nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de	—	—
Grating Pitch	grating periodicity	242nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep	—	—
Grating Pitch	grating periodicity	244nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Mode Coupling Energy	Rabi splitting	13.9meV	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Dielectric Constant	GaAs dielectric constant	3.54	GaAs	—		—
Dielectric Constant	Al0.4Ga0.6As dielectric constant	3.3	Al0.4Ga0.6As	—		—
Exciton Energy	exciton resonance	1527.5meV	GaAs	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	51.2%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	22.6%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Exciton Fraction	excitonic fraction	12.1%	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	40nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep		—
Grating Depth	etched groove depth	90nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep		—
Grating Depth	etched groove depth	130nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de		—
Grating Pitch	grating periodicity	240nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs heterostructure waveguide with a 1D etched grati GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove dep GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove de	—	—
Grating Pitch	grating periodicity	242nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove dep	—	—
Grating Pitch	grating periodicity	244nm	GaAs Al0.8Ga0.2As Al0.4Ga0.6As	GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove dep	—	—