Research paperExperimental GrowthExperimental CharacterizationComputational MultiscaleFabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the ContinuumF. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722AbstractExciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. In this work a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance is used to achieve a low-density polariton condensation threshold in a GaAs/AlGaAs waveguide. The paper studies how fabrication control and surface passivation via atomic layer deposition reduce exciton quenching at the grating sidewalls.Read more
GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.9 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational MultiscaleFabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the ContinuumF. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722AbstractExciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. In this work a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance is used to achieve a low-density polariton condensation threshold in a GaAs/AlGaAs waveguide. The paper studies how fabrication control and surface passivation via atomic layer deposition reduce exciton quenching at the grating sidewalls.Read more
GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.9 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational MultiscaleFabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the ContinuumF. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722AbstractExciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. In this work a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance is used to achieve a low-density polariton condensation threshold in a GaAs/AlGaAs waveguide. The paper studies how fabrication control and surface passivation via atomic layer deposition reduce exciton quenching at the grating sidewalls.Read more
GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.9 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational MultiscaleFabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the ContinuumF. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon et al.arXiv·2022·10.1038/s41377-018-0084-z·arXiv:2205.05722AbstractExciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. In this work a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance is used to achieve a low-density polariton condensation threshold in a GaAs/AlGaAs waveguide. The paper studies how fabrication control and surface passivation via atomic layer deposition reduce exciton quenching at the grating sidewalls.Read more
GaAs/AlGaAs heterostructure waveguide with a 1D etched grating of 240 nm pitch and 90 nm groove depth, with ALD alumina passivation.9 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 40 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 240 nm pitch and 130 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 242 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand
GaAs/AlGaAs waveguide with 244 nm pitch and 90 nm groove depth.8 preparations2 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl₂O₃Substrate / DielectricGaAsSubstrate / DielectricExpand