Electroluminescence in n-type GaAs unipolar nanoLEDs

Bejoys Jacob; João Azevedo; Jana B. Nieder; Bruno Romeira

doi:10.1364/OL.546063

Paper details

Research paper

Experimental GrowthExperimental Characterization

Electroluminescence in n-type GaAs unipolar nanoLEDs

Bejoys Jacob, João Azevedo, Jana B. Nieder, Bruno Romeira

2025·10.1364/OL.546063·arXiv:2501.10142

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

9 preparations3 characterizations8 properties3 figures

ExperimentalGaAsStudied MaterialAlAsStudied MaterialAlGaAsStudied MaterialSi₃N₄Substrate / DielectricSiO₂Substrate / DielectricGaAsSubstrate / DielectricGeCapping Or ContactNiCapping Or ContactAuCapping Or ContactCrCapping Or Contact

Materials

GaAs

Studied Material

Also known as

n-type GaAsGaAs nanoLEDGaAs epilayer

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Electroluminescence in n-type GaAs unipolar nanoLEDs | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	EL peak	866nm	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Threshold Voltage	turn-on voltage	2.8V	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Sheet Resistance	series resistance	2850ohm/sq	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	carrier lifetime	300ps	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	2%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	6%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	20800cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	19900cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	EL peak	866nm	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Threshold Voltage	turn-on voltage	2.8V	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Sheet Resistance	series resistance	2850ohm/sq	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	carrier lifetime	300ps	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	2%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	6%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	20800cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	19900cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	EL peak	866nm	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Threshold Voltage	turn-on voltage	2.8V	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Sheet Resistance	series resistance	2850ohm/sq	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	carrier lifetime	300ps	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	2%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	6%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	20800cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	19900cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	EL peak	866nm	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Threshold Voltage	turn-on voltage	2.8V	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Fet Sheet Resistance	series resistance	2850ohm/sq	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	carrier lifetime	300ps	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	2%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Quantum Yield	IQE	6%	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	20800cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—
Pl Peak Intensity	surface recombination velocity	19900cm s⁻¹	GaAs	Fabricated unipolar n-i-n GaAs nanoLED array with nanopillar	—

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

Electroluminescence in n-type GaAs unipolar nanoLEDs

Samples

Fabricated unipolar n-i-n GaAs nanoLED array with nanopillars and passivation/dielectric layers; 10×10 array, 1.2 µm pitch, top diameter ~166 nm, etched height ~560 nm.

Materials

Why these are connected

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