Research paper
Experimental CharacterizationExperimental GrowthComputational OtherEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization11 properties1 figure
1 preparation1 characterization2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Mean Free Path | mean free path | 64.5um | — | |||
| Carrier Wavelength | Fermi wavelength | 43nm | — | |||
| Temperature | measurement temperature | 4.1K | — | |||
| Device Length | L | 15um | — | |||
| Device Spacing | Lsd | 13.8um | — | |||
| Device Width | w | 0.6um | — | |||
| Point Contact Separation | Lc | 2um | — | |||
| Point Contact Separation | Lc | 4um | — | |||
| Point Contact Separation | Lc | 6um | — | |||
| Point Contact Separation | Lc | 8um | — | |||
| Nonlocal Resistance Peak | fractional source-drain resonance peak amplitude | 50ohm | — | |||
| Magnetic Field | integer focusing peak (nc = 1) | 0.095T | — | |||
| Magnetic Field | integer focusing peak (nc = 3) | 0.077T | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
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Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Diffusion of photo-excited holes in viscous electron fluid
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization11 properties1 figure
1 preparation1 characterization2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Mean Free Path | mean free path | 64.5um | — | |||
| Carrier Wavelength | Fermi wavelength | 43nm | — | |||
| Temperature | measurement temperature | 4.1K | — | |||
| Device Length | L | 15um | — | |||
| Device Spacing | Lsd | 13.8um | — | |||
| Device Width | w | 0.6um | — | |||
| Point Contact Separation | Lc | 2um | — | |||
| Point Contact Separation | Lc | 4um | — | |||
| Point Contact Separation | Lc | 6um | — | |||
| Point Contact Separation | Lc | 8um | — | |||
| Nonlocal Resistance Peak | fractional source-drain resonance peak amplitude | 50ohm | — | |||
| Magnetic Field | integer focusing peak (nc = 1) | 0.095T | — | |||
| Magnetic Field | integer focusing peak (nc = 3) | 0.077T | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Diffusion of photo-excited holes in viscous electron fluid
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization11 properties1 figure
1 preparation1 characterization2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Mean Free Path | mean free path | 64.5um | — | |||
| Carrier Wavelength | Fermi wavelength | 43nm | — | |||
| Temperature | measurement temperature | 4.1K | — | |||
| Device Length | L | 15um | — | |||
| Device Spacing | Lsd | 13.8um | — | |||
| Device Width | w | 0.6um | — | |||
| Point Contact Separation | Lc | 2um | — | |||
| Point Contact Separation | Lc | 4um | — | |||
| Point Contact Separation | Lc | 6um | — | |||
| Point Contact Separation | Lc | 8um | — | |||
| Nonlocal Resistance Peak | fractional source-drain resonance peak amplitude | 50ohm | — | |||
| Magnetic Field | integer focusing peak (nc = 1) | 0.095T | — | |||
| Magnetic Field | integer focusing peak (nc = 3) | 0.077T | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Diffusion of photo-excited holes in viscous electron fluid
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization11 properties1 figure
1 preparation1 characterization2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Mean Free Path | mean free path | 64.5um | — | |||
| Carrier Wavelength | Fermi wavelength | 43nm | — | |||
| Temperature | measurement temperature | 4.1K | — | |||
| Device Length | L | 15um | — | |||
| Device Spacing | Lsd | 13.8um | — | |||
| Device Width | w | 0.6um | — | |||
| Point Contact Separation | Lc | 2um | — | |||
| Point Contact Separation | Lc | 4um | — | |||
| Point Contact Separation | Lc | 6um | — | |||
| Point Contact Separation | Lc | 8um | — | |||
| Nonlocal Resistance Peak | fractional source-drain resonance peak amplitude | 50ohm | — | |||
| Magnetic Field | integer focusing peak (nc = 1) | 0.095T | — | |||
| Magnetic Field | integer focusing peak (nc = 3) | 0.077T | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Diffusion of photo-excited holes in viscous electron fluid