| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Quantum Well Thickness | dSQW | 13nm | — | |||
| Spacer Thickness | dS | 29.4nm | — | |||
| Donor Concentration | nSi | 32000000000000000m⁻² | — | |||
| Electron Concentration | ne | 7480000000000000m⁻² | — | |||
| Electron Concentration | ne | 8420000000000000m⁻² | — | |||
| Mobility | muy | 124m²/Vs | — | |||
| Mobility | muy | 206m²/Vs | — | |||
| Mobility | mux | 80.5m²/Vs | — | |||
| Mobility | mux | 103m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.54 | — | |||
| Mobility Ratio | muy/mux | 2 | — | |||
| Quantum Well Thickness | dSQW | 10nm | — | |||
| Spacer Thickness | dS | 10.8nm | — | |||
| Donor Concentration | nSi | 50000000000000000m⁻² | — | |||
| Electron Concentration | ne | 11500000000000000m⁻² | — | |||
| Electron Concentration | ne | 14500000000000000m⁻² | — | |||
| Mobility | muy | 9.33m²/Vs | — | |||
| Mobility | muy | 18.6m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.58 | — | |||
| Mobility Ratio | muy/mux | 1.46 | — | |||
| Quantum Lifetime | tauqy | 1.38ps | — | |||
| Quantum Lifetime | tauqx | 1.44ps | — | |||
| Quantum Lifetime | tauqx | 2.72ps | — | |||
| Quantum Lifetime | tauqy | 3.01ps | — | |||
| Quantum Lifetime | tauq | 1ps | — |
Optical realization of magneto-intersubband oscillations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Quantum Well Thickness | dSQW | 13nm | — | |||
| Spacer Thickness | dS | 29.4nm | — | |||
| Donor Concentration | nSi | 32000000000000000m⁻² | — | |||
| Electron Concentration | ne | 7480000000000000m⁻² | — | |||
| Electron Concentration | ne | 8420000000000000m⁻² | — | |||
| Mobility | muy | 124m²/Vs | — | |||
| Mobility | muy | 206m²/Vs | — | |||
| Mobility | mux | 80.5m²/Vs | — | |||
| Mobility | mux | 103m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.54 | — | |||
| Mobility Ratio | muy/mux | 2 | — | |||
| Quantum Well Thickness | dSQW | 10nm | — | |||
| Spacer Thickness | dS | 10.8nm | — | |||
| Donor Concentration | nSi | 50000000000000000m⁻² | — | |||
| Electron Concentration | ne | 11500000000000000m⁻² | — | |||
| Electron Concentration | ne | 14500000000000000m⁻² | — | |||
| Mobility | muy | 9.33m²/Vs | — | |||
| Mobility | muy | 18.6m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.58 | — | |||
| Mobility Ratio | muy/mux | 1.46 | — | |||
| Quantum Lifetime | tauqy | 1.38ps | — | |||
| Quantum Lifetime | tauqx | 1.44ps | — | |||
| Quantum Lifetime | tauqx | 2.72ps | — | |||
| Quantum Lifetime | tauqy | 3.01ps | — | |||
| Quantum Lifetime | tauq | 1ps | — |
Optical realization of magneto-intersubband oscillations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Quantum Well Thickness | dSQW | 13nm | — | |||
| Spacer Thickness | dS | 29.4nm | — | |||
| Donor Concentration | nSi | 32000000000000000m⁻² | — | |||
| Electron Concentration | ne | 7480000000000000m⁻² | — | |||
| Electron Concentration | ne | 8420000000000000m⁻² | — | |||
| Mobility | muy | 124m²/Vs | — | |||
| Mobility | muy | 206m²/Vs | — | |||
| Mobility | mux | 80.5m²/Vs | — | |||
| Mobility | mux | 103m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.54 | — | |||
| Mobility Ratio | muy/mux | 2 | — | |||
| Quantum Well Thickness | dSQW | 10nm | — | |||
| Spacer Thickness | dS | 10.8nm | — | |||
| Donor Concentration | nSi | 50000000000000000m⁻² | — | |||
| Electron Concentration | ne | 11500000000000000m⁻² | — | |||
| Electron Concentration | ne | 14500000000000000m⁻² | — | |||
| Mobility | muy | 9.33m²/Vs | — | |||
| Mobility | muy | 18.6m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.58 | — | |||
| Mobility Ratio | muy/mux | 1.46 | — | |||
| Quantum Lifetime | tauqy | 1.38ps | — | |||
| Quantum Lifetime | tauqx | 1.44ps | — | |||
| Quantum Lifetime | tauqx | 2.72ps | — | |||
| Quantum Lifetime | tauqy | 3.01ps | — | |||
| Quantum Lifetime | tauq | 1ps | — |
Optical realization of magneto-intersubband oscillations
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Quantum Well Thickness | dSQW | 13nm | — | |||
| Spacer Thickness | dS | 29.4nm | — | |||
| Donor Concentration | nSi | 32000000000000000m⁻² | — | |||
| Electron Concentration | ne | 7480000000000000m⁻² | — | |||
| Electron Concentration | ne | 8420000000000000m⁻² | — | |||
| Mobility | muy | 124m²/Vs | — | |||
| Mobility | muy | 206m²/Vs | — | |||
| Mobility | mux | 80.5m²/Vs | — | |||
| Mobility | mux | 103m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.54 | — | |||
| Mobility Ratio | muy/mux | 2 | — | |||
| Quantum Well Thickness | dSQW | 10nm | — | |||
| Spacer Thickness | dS | 10.8nm | — | |||
| Donor Concentration | nSi | 50000000000000000m⁻² | — | |||
| Electron Concentration | ne | 11500000000000000m⁻² | — | |||
| Electron Concentration | ne | 14500000000000000m⁻² | — | |||
| Mobility | muy | 9.33m²/Vs | — | |||
| Mobility | muy | 18.6m²/Vs | — | |||
| Mobility Ratio | muy/mux | 1.58 | — | |||
| Mobility Ratio | muy/mux | 1.46 | — | |||
| Quantum Lifetime | tauqy | 1.38ps | — | |||
| Quantum Lifetime | tauqx | 1.44ps | — | |||
| Quantum Lifetime | tauqx | 2.72ps | — | |||
| Quantum Lifetime | tauqy | 3.01ps | — | |||
| Quantum Lifetime | tauq | 1ps | — |
Optical realization of magneto-intersubband oscillations
