Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

A. A. Bykov; D. V. Nomokonov; A. V. Goran; I. S. Strygin; I. V. Marchishin; A. K. Bakarov

doi:10.48550/arxiv.2301.03772

Paper

Atlas literature

Research paper

Experimental Characterization

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

A. A. Bykov, D. V. Nomokonov, A. V. Goran, I. S. Strygin et al.

2023·10.48550/arxiv.2301.03772·arXiv:2301.03772

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Selectively doped single GaAs quantum well heterostructure with short-period AlAs/GaAs superlattice barriers; structure no. 1 in Table 1.

2 preparations1 characterization15 properties4 figures

ExperimentalGaAs/AlAs/GaAsStudied MaterialGaAsStudied MaterialAlAsSubstrate / DielectricSiPrecursorGaAsSubstrate / Dielectric

Selectively doped single GaAs quantum well heterostructure with short-period AlAs/GaAs superlattice barriers; structure no. 2 in Table 1.

2 preparations1 characterization10 properties4 figures

ExperimentalGaAs/AlAs/GaAsStudied MaterialGaAsStudied MaterialAlAsSubstrate / DielectricSiPrecursorGaAsSubstrate / Dielectric

Why these are connected

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Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers | Matter42 Literature