Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Large-area GaAs-based heterostructure containing a selectively doped 16-nm GaAs quantum well with AlAs/GaAs superlattice barriers and ohmic Ge/Au/Ni/Au corner contacts, used for simultaneous transmittance and photoresistance measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Large-area GaAs-based heterostructure containing a selectively doped 16-nm GaAs quantum well with AlAs/GaAs superlattice barriers and ohmic Ge/Au/Ni/Au corner contacts, used for simultaneous transmittance and photoresistance measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Large-area GaAs-based heterostructure containing a selectively doped 16-nm GaAs quantum well with AlAs/GaAs superlattice barriers and ohmic Ge/Au/Ni/Au corner contacts, used for simultaneous transmittance and photoresistance measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Large-area GaAs-based heterostructure containing a selectively doped 16-nm GaAs quantum well with AlAs/GaAs superlattice barriers and ohmic Ge/Au/Ni/Au corner contacts, used for simultaneous transmittance and photoresistance measurements.