Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quantum capacitance parametric amplifier device based on a GaAs/AlGaAs heterostructure with a 2DEG 91 nm below the surface, NbTiN gate/finger-gate structure, NiGeAu ohmic contacts, and an off-chip copper spring inductor in the resonator tank circuit.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quantum capacitance parametric amplifier device based on a GaAs/AlGaAs heterostructure with a 2DEG 91 nm below the surface, NbTiN gate/finger-gate structure, NiGeAu ohmic contacts, and an off-chip copper spring inductor in the resonator tank circuit.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quantum capacitance parametric amplifier device based on a GaAs/AlGaAs heterostructure with a 2DEG 91 nm below the surface, NbTiN gate/finger-gate structure, NiGeAu ohmic contacts, and an off-chip copper spring inductor in the resonator tank circuit.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quantum capacitance parametric amplifier device based on a GaAs/AlGaAs heterostructure with a 2DEG 91 nm below the surface, NbTiN gate/finger-gate structure, NiGeAu ohmic contacts, and an off-chip copper spring inductor in the resonator tank circuit.
