Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaAs quantum well with flanking stepped AlxGa1−xAs barriers and Si dopants in a doping-well structure; measured in a 4 x 4 mm² van der Pauw geometry with alloyed In:Sn contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaAs quantum well with flanking stepped AlxGa1−xAs barriers and Si dopants in a doping-well structure; measured in a 4 x 4 mm² van der Pauw geometry with alloyed In:Sn contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaAs quantum well with flanking stepped AlxGa1−xAs barriers and Si dopants in a doping-well structure; measured in a 4 x 4 mm² van der Pauw geometry with alloyed In:Sn contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaAs quantum well with flanking stepped AlxGa1−xAs barriers and Si dopants in a doping-well structure; measured in a 4 x 4 mm² van der Pauw geometry with alloyed In:Sn contacts.