Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations3 properties2 figures
4 preparations3 characterizations4 properties5 figures
3 preparations1 characterization4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Nanowire Core Diameter | GaAs core diameter | 150nm | — | |||
| Layer Thickness | InAs shell thickness | 25nm | — | |||
| Layer Thickness | Al half-shell thickness | 20nm | — | |||
| Layer Thickness | GaAs core thickness | 150nm | — |
Related documents with shared materials, methods, properties, or citations.
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Magnetic anisotropy related to hybridization between Fe 3d and As 4p orbitals in a bcc Fe-As thin film
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Moiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxy
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations3 properties2 figures
4 preparations3 characterizations4 properties5 figures
3 preparations1 characterization4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Nanowire Core Diameter | GaAs core diameter | 150nm | — | |||
| Layer Thickness | InAs shell thickness | 25nm | — | |||
| Layer Thickness | Al half-shell thickness | 20nm | — | |||
| Layer Thickness | GaAs core thickness | 150nm | — |
Related documents with shared materials, methods, properties, or citations.
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Magnetic anisotropy related to hybridization between Fe 3d and As 4p orbitals in a bcc Fe-As thin film
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Moiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxy
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations3 properties2 figures
4 preparations3 characterizations4 properties5 figures
3 preparations1 characterization4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Nanowire Core Diameter | GaAs core diameter | 150nm | — | |||
| Layer Thickness | InAs shell thickness | 25nm | — | |||
| Layer Thickness | Al half-shell thickness | 20nm | — | |||
| Layer Thickness | GaAs core thickness | 150nm | — |
Related documents with shared materials, methods, properties, or citations.
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Magnetic anisotropy related to hybridization between Fe 3d and As 4p orbitals in a bcc Fe-As thin film
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Moiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxy
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations3 properties2 figures
4 preparations3 characterizations4 properties5 figures
3 preparations1 characterization4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Nanowire Core Diameter | GaAs core diameter | 150nm | — | |||
| Layer Thickness | InAs shell thickness | 25nm | — | |||
| Layer Thickness | Al half-shell thickness | 20nm | — | |||
| Layer Thickness | GaAs core thickness | 150nm | — |
Related documents with shared materials, methods, properties, or citations.
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Magnetic anisotropy related to hybridization between Fe 3d and As 4p orbitals in a bcc Fe-As thin film
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Moiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxy
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
