Research paperExperimental GrowthExperimental CharacterizationFlux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junctionPatrick Zellekens, Russell S. Deacon, Farah Basaric, Raghavendra Juluri et al.arXiv preprint·2024·10.1038/s42005-025-02242-7·arXiv:2402.13880AbstractWe investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for topological superconducting devices. Using selectively grown nanowires, we observe h/e-periodic Aharonov–Bohm oscillations in magnetoconductance of bare GaAs/InAs core/shell wires and approximately h/2e-periodic oscillations in the switching current of Josephson junctions with epitaxial Al half-shells. The results indicate transport around the wire circumference and suggest full proximitization of the InAs shell from the superconducting contacts.Read more
Bare GaAs/InAs core/shell nanowire device A with normal Ti/Au contacts, used for magnetoconductance measurements.1 preparation2 characterizations3 properties2 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialTiCapping Or ContactAuCapping Or ContactExpand
GaAs/InAs core/shell nanowire with epitaxial Al half-shell, used as a Josephson junction device (one of the second-growth-run devices B/C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Second Josephson junction device fabricated from the Al half-shell growth run (device B or C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Research paperExperimental GrowthExperimental CharacterizationFlux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junctionPatrick Zellekens, Russell S. Deacon, Farah Basaric, Raghavendra Juluri et al.arXiv preprint·2024·10.1038/s42005-025-02242-7·arXiv:2402.13880AbstractWe investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for topological superconducting devices. Using selectively grown nanowires, we observe h/e-periodic Aharonov–Bohm oscillations in magnetoconductance of bare GaAs/InAs core/shell wires and approximately h/2e-periodic oscillations in the switching current of Josephson junctions with epitaxial Al half-shells. The results indicate transport around the wire circumference and suggest full proximitization of the InAs shell from the superconducting contacts.Read more
Bare GaAs/InAs core/shell nanowire device A with normal Ti/Au contacts, used for magnetoconductance measurements.1 preparation2 characterizations3 properties2 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialTiCapping Or ContactAuCapping Or ContactExpand
GaAs/InAs core/shell nanowire with epitaxial Al half-shell, used as a Josephson junction device (one of the second-growth-run devices B/C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Second Josephson junction device fabricated from the Al half-shell growth run (device B or C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Research paperExperimental GrowthExperimental CharacterizationFlux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junctionPatrick Zellekens, Russell S. Deacon, Farah Basaric, Raghavendra Juluri et al.arXiv preprint·2024·10.1038/s42005-025-02242-7·arXiv:2402.13880AbstractWe investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for topological superconducting devices. Using selectively grown nanowires, we observe h/e-periodic Aharonov–Bohm oscillations in magnetoconductance of bare GaAs/InAs core/shell wires and approximately h/2e-periodic oscillations in the switching current of Josephson junctions with epitaxial Al half-shells. The results indicate transport around the wire circumference and suggest full proximitization of the InAs shell from the superconducting contacts.Read more
Bare GaAs/InAs core/shell nanowire device A with normal Ti/Au contacts, used for magnetoconductance measurements.1 preparation2 characterizations3 properties2 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialTiCapping Or ContactAuCapping Or ContactExpand
GaAs/InAs core/shell nanowire with epitaxial Al half-shell, used as a Josephson junction device (one of the second-growth-run devices B/C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Second Josephson junction device fabricated from the Al half-shell growth run (device B or C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Research paperExperimental GrowthExperimental CharacterizationFlux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junctionPatrick Zellekens, Russell S. Deacon, Farah Basaric, Raghavendra Juluri et al.arXiv preprint·2024·10.1038/s42005-025-02242-7·arXiv:2402.13880AbstractWe investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial aluminium as a potential platform for topological superconducting devices. Using selectively grown nanowires, we observe h/e-periodic Aharonov–Bohm oscillations in magnetoconductance of bare GaAs/InAs core/shell wires and approximately h/2e-periodic oscillations in the switching current of Josephson junctions with epitaxial Al half-shells. The results indicate transport around the wire circumference and suggest full proximitization of the InAs shell from the superconducting contacts.Read more
Bare GaAs/InAs core/shell nanowire device A with normal Ti/Au contacts, used for magnetoconductance measurements.1 preparation2 characterizations3 properties2 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialTiCapping Or ContactAuCapping Or ContactExpand
GaAs/InAs core/shell nanowire with epitaxial Al half-shell, used as a Josephson junction device (one of the second-growth-run devices B/C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand
Second Josephson junction device fabricated from the Al half-shell growth run (device B or C).1 preparation4 characterizations3 properties4 figuresExperimentalGaAsStudied MaterialInAsStudied MaterialAlCapping Or ContactExpand