Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.
Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.
Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.
Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.
Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.
Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.
Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.
Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.
Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.