Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Odysseas Williams; Stefan Faelt; Filip Krizek; Werner Wegscheider

doi:10.1088/1367-2630/adccf0

Paper details

Research paper

Experimental CharacterizationExperimental GrowthTheoretical

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Odysseas Williams, Stefan Faelt, Filip Krizek, Werner Wegscheider

arXiv preprint·2024·10.1088/1367-2630/adccf0·arXiv:2410.02459

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

1 preparation2 characterizations4 properties4 figures

ExperimentalGaAsStudied MaterialAlAsSubstrate / DielectricAl0.1Ga0.9AsSubstrate / DielectricSiPrecursor

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

1 preparation2 characterizations3 properties4 figures

ExperimentalGaAsStudied MaterialAlAsSubstrate / DielectricAl0.1Ga0.9AsSubstrate / DielectricSiPrecursor

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

1 preparation1 characterization3 properties4 figures

ExperimentalGaAsStudied MaterialAlAsSubstrate / DielectricAl0.1Ga0.9AsSubstrate / DielectricSiPrecursor

Materials

GaAs

Studied Material

Also known as

2DEG in GaAsGaAs quantum well

studied material

AlAs

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Carrier Concentration	2DEG density	9.1cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	7.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	6.5cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	0cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Spin Polarization Range	full polarization plateau at ν = 1	0.98<ν<1.03	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	7.5	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	4.9	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Temperature Range	measurement temperature range	0.25-2.4K	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Concentration	2DEG density	9.1cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	7.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	6.5cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	0cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Spin Polarization Range	full polarization plateau at ν = 1	0.98<ν<1.03	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	7.5	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	4.9	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Temperature Range	measurement temperature range	0.25-2.4K	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Concentration	2DEG density	9.1cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	7.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	6.5cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	0cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Spin Polarization Range	full polarization plateau at ν = 1	0.98<ν<1.03	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	7.5	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	4.9	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Temperature Range	measurement temperature range	0.25-2.4K	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Concentration	2DEG density	9.1cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	7.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Carrier Concentration	2DEG density	6.5cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	0cm⁻²	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Density Change Per Power Decade	dne/d log10(W)	-0.2cm⁻²	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Spin Polarization Range	full polarization plateau at ν = 1	0.98<ν<1.03	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	7.5	GaAs	Wafer B microcavity heterostructure containing a GaAs 2DEG/q	—
Skyrmion Size Parameter	S=A	4.9	GaAs	Wafer C microcavity heterostructure containing a GaAs 2DEG/q	—
Temperature Range	measurement temperature range	0.25-2.4K	GaAs	Wafer A microcavity heterostructure containing a GaAs 2DEG/q	—

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons

Samples

Wafer A microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 2λ.

Wafer B microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length 1λ.

Wafer C microcavity heterostructure containing a GaAs 2DEG/quantum well at the center of a planar microcavity with AlAs/Al0.1Ga0.9As DBR mirrors and Si delta-doping; central cavity length λ/2.

Materials

Why these are connected

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