Research paper
Experimental GrowthExperimental CharacterizationComputational Kinetic ModelEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | GaAs epilayer thickness | 2um | — | |||
| Dopant Concentration | Si dopant density | 30000000000000000cm⁻³ | — | |||
| Optical Pulse Duration | pump pulse duration | 2ps | — | |||
| Laser Wavelength | negative detuning operating wavelength | 819.5nm | — | |||
| Pump Repetition Period | pulse repetition period | 6.58ns | — | |||
| Spectral Bandwidth | pump spectral FWHM | 0.6nm | — |
Related documents with shared materials, methods, properties, or citations.
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Optical realization of magneto-intersubband oscillations
Effect of electric current on optical response of viscous electron-hole plasma
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Current-induced Magnetoexcitons in Mesoscopic Electron-hole Plasma
Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis
Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Ultrafast Enhancement of Interfacial Exchange Coupling in Ferromagnetic Bilayer
Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | GaAs epilayer thickness | 2um | — | |||
| Dopant Concentration | Si dopant density | 30000000000000000cm⁻³ | — | |||
| Optical Pulse Duration | pump pulse duration | 2ps | — | |||
| Laser Wavelength | negative detuning operating wavelength | 819.5nm | — | |||
| Pump Repetition Period | pulse repetition period | 6.58ns | — | |||
| Spectral Bandwidth | pump spectral FWHM | 0.6nm | — |
Related documents with shared materials, methods, properties, or citations.
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Optical realization of magneto-intersubband oscillations
Effect of electric current on optical response of viscous electron-hole plasma
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Current-induced Magnetoexcitons in Mesoscopic Electron-hole Plasma
Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis
Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Ultrafast Enhancement of Interfacial Exchange Coupling in Ferromagnetic Bilayer
Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | GaAs epilayer thickness | 2um | — | |||
| Dopant Concentration | Si dopant density | 30000000000000000cm⁻³ | — | |||
| Optical Pulse Duration | pump pulse duration | 2ps | — | |||
| Laser Wavelength | negative detuning operating wavelength | 819.5nm | — | |||
| Pump Repetition Period | pulse repetition period | 6.58ns | — | |||
| Spectral Bandwidth | pump spectral FWHM | 0.6nm | — |
Related documents with shared materials, methods, properties, or citations.
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Optical realization of magneto-intersubband oscillations
Effect of electric current on optical response of viscous electron-hole plasma
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Current-induced Magnetoexcitons in Mesoscopic Electron-hole Plasma
Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis
Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Ultrafast Enhancement of Interfacial Exchange Coupling in Ferromagnetic Bilayer
Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | GaAs epilayer thickness | 2um | — | |||
| Dopant Concentration | Si dopant density | 30000000000000000cm⁻³ | — | |||
| Optical Pulse Duration | pump pulse duration | 2ps | — | |||
| Laser Wavelength | negative detuning operating wavelength | 819.5nm | — | |||
| Pump Repetition Period | pulse repetition period | 6.58ns | — | |||
| Spectral Bandwidth | pump spectral FWHM | 0.6nm | — |
Related documents with shared materials, methods, properties, or citations.
Coupled Topological Interface States and Phonon Molecules in GaAs/AlAs Superlattices
Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Optical realization of magneto-intersubband oscillations
Effect of electric current on optical response of viscous electron-hole plasma
Spin polarization of Quantum Hall states for filling factors 1 ≤ν ≤2 measured with microcavity polaritons
Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Current-induced Magnetoexcitons in Mesoscopic Electron-hole Plasma
Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis
Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Ultrafast Enhancement of Interfacial Exchange Coupling in Ferromagnetic Bilayer
Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys