Effect of electric current on optical response of viscous electron-hole plasma

Paper details

Research paper

Experimental GrowthExperimental Characterization

Yu. A. Pusep, M. A. T. Patricio, G. M. Jacobsen, M. D. Teodoro et al.

arXiv·2026·10.1088/1361-6463/ae6e4c·arXiv:2605.18682

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation2 characterizations10 properties3 figures

ExperimentalGaAsStudied MaterialAlAsStudied MaterialSiPrecursorGaAsSubstrate / Dielectric

GaAs

Studied Material

Also known as

GaAs quantum well

studied material

AlAs

Studied Material

Also known as

Related documents with shared materials, methods, properties, or citations.

Effect of electric current on optical response of viscous electron-hole plasma | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Carrier Concentration	sheet electron density	910000000000cm⁻²	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₀	1.55eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₁	1.54eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	LH₀	1.53eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	XLH and X+LH	double PL line: exciton/trion	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	Hall voltage drop	0.6V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	residual Hall voltage	0.003V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	hole diffusion length	5-10um	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Carrier Concentration	sheet electron density	910000000000cm⁻²	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₀	1.55eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₁	1.54eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	LH₀	1.53eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	XLH and X+LH	double PL line: exciton/trion	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	Hall voltage drop	0.6V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	residual Hall voltage	0.003V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	hole diffusion length	5-10um	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Carrier Concentration	sheet electron density	910000000000cm⁻²	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₀	1.55eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₁	1.54eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	LH₀	1.53eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	XLH and X+LH	double PL line: exciton/trion	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	Hall voltage drop	0.6V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	residual Hall voltage	0.003V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	hole diffusion length	5-10um	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Carrier Concentration	sheet electron density	910000000000cm⁻²	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₀	1.55eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	HH₁	1.54eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	LH₀	1.53eV	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	XLH and X+LH	double PL line: exciton/trion	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	Hall voltage drop	0.6V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	residual Hall voltage	0.003V	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—
PL Peak	hole diffusion length	5-10um	GaAs	Mesoscopic n-doped GaAs quantum well channel used for magnet	—