Abstract

Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. Here, we show that GaAs quantum dots obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k·p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission.

Abstract

Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. Here, we show that GaAs quantum dots obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k·p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission.

Abstract

Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. Here, we show that GaAs quantum dots obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k·p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission.

Abstract

Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. Here, we show that GaAs quantum dots obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k·p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission.