Current-induced Magnetoexcitons in Mesoscopic Electron-hole Plasma

Paper details

Research paper

Experimental GrowthExperimental Characterization

Yu. A. Pusep, M. A. T. Patricio, G. M. Jacobsen, M. D. Teodoro et al.

arXiv preprint·2025·10.1016/j.jlumin.2025.121629·arXiv:2507.19678

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation2 characterizations10 properties4 figures

ExperimentalGaAsStudied MaterialGaAsSubstrate / DielectricGaAs/AlAsReference Material

GaAs quantum well

GaAs

Studied Material

Also known as

single GaAs quantum wellGaAs QW

Variables

thickness_nm= 14

studied material

Related documents with shared materials, methods, properties, or citations.

Current-induced Magnetoexcitons in Mesoscopic Electron-hole Plasma | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Width	channel width	5um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Length	channel length	100um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Sheet Carrier Density	electron density	910000000000cm⁻²	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	X	1.5153eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	DX center	1.5141eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	doublet splitting	2meV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	75uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	53uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Pl Peak Fwhm	PL peak	1meV	GaAs	—	—	—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Width	channel width	5um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Length	channel length	100um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Sheet Carrier Density	electron density	910000000000cm⁻²	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	X	1.5153eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	DX center	1.5141eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	doublet splitting	2meV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	75uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	53uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Pl Peak Fwhm	PL peak	1meV	GaAs	—	—	—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Width	channel width	5um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Length	channel length	100um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Sheet Carrier Density	electron density	910000000000cm⁻²	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	X	1.5153eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	DX center	1.5141eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	doublet splitting	2meV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	75uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	53uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Pl Peak Fwhm	PL peak	1meV	GaAs	—	—	—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well thickness	14nm	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Width	channel width	5um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Channel Length	channel length	100um	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Sheet Carrier Density	electron density	910000000000cm⁻²	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Fet Mobility	electron mobility	2000000cm²/Vs	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	X	1.5153eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	DX center	1.5141eV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	doublet splitting	2meV	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	75uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
PL Peak	critical current	53uA	GaAs	Mesoscopic 5 µm wide, 100 µm long GaAs quantum-well channel		—
Pl Peak Fwhm	PL peak	1meV	GaAs	—	—	—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—