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A systematic study of spin-dependent recombination in GaAs1-xNx as a function of nitrogen content | Matter42 Literature

Paper details

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs₁-xNx

GaAs₁-xNx

Studied Material

Also known as

dilute nitride GaAsGaAsN alloy

Variables

nitrogen_fraction= x

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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Paper details

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs₁-xNx

GaAs₁-xNx

Studied Material

Also known as

dilute nitride GaAsGaAsN alloy

Variables

nitrogen_fraction= x

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs₁-xNx

GaAs₁-xNx

Studied Material

Also known as

dilute nitride GaAsGaAsN alloy

Variables

nitrogen_fraction= x

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs₁-xNx

GaAs₁-xNx

Studied Material

Also known as

dilute nitride GaAsGaAsN alloy

Variables

nitrogen_fraction= x

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Properties

Type	Label	Value	Material	Sample	Condition	Source
Alloy Nitrogen Fraction	x	0.036	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Alloy Nitrogen Fraction	x	0.031	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.031.		—
Alloy Nitrogen Fraction	x	0.034	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.034.		—
Alloy Nitrogen Fraction	x	0.035	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.035.		—
Alloy Nitrogen Fraction	x	0.022	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Spin Dependent Recombination Ratio	SDR ratio	1.5	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Spin Dependent Recombination Ratio	SDR ratio	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	minimum reported power for maximum SDR	0.6mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	maximum reported power for maximum SDR	15mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Pl Intensity Change	linearly-polarized to circularly-polarized pump intensity increase factor	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Pl Intensity Ratio	relative intensity of red spectrum vs blue spectrum	18.7	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Raman Peak	regex-detected Raman peak	470cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	580cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	550cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	500cm⁻¹	GaAs₁-xNx	—	—	—
Ir Band Position	IR band	470cm⁻¹	GaAs₁-xNx	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Alloy Nitrogen Fraction	x	0.036	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Alloy Nitrogen Fraction	x	0.031	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.031.		—
Alloy Nitrogen Fraction	x	0.034	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.034.		—
Alloy Nitrogen Fraction	x	0.035	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.035.		—
Alloy Nitrogen Fraction	x	0.022	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Spin Dependent Recombination Ratio	SDR ratio	1.5	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Spin Dependent Recombination Ratio	SDR ratio	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	minimum reported power for maximum SDR	0.6mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	maximum reported power for maximum SDR	15mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Pl Intensity Change	linearly-polarized to circularly-polarized pump intensity increase factor	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Pl Intensity Ratio	relative intensity of red spectrum vs blue spectrum	18.7	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Raman Peak	regex-detected Raman peak	470cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	580cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	550cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	500cm⁻¹	GaAs₁-xNx	—	—	—
Ir Band Position	IR band	470cm⁻¹	GaAs₁-xNx	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Alloy Nitrogen Fraction	x	0.036	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Alloy Nitrogen Fraction	x	0.031	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.031.		—
Alloy Nitrogen Fraction	x	0.034	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.034.		—
Alloy Nitrogen Fraction	x	0.035	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.035.		—
Alloy Nitrogen Fraction	x	0.022	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Spin Dependent Recombination Ratio	SDR ratio	1.5	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Spin Dependent Recombination Ratio	SDR ratio	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	minimum reported power for maximum SDR	0.6mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	maximum reported power for maximum SDR	15mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Pl Intensity Change	linearly-polarized to circularly-polarized pump intensity increase factor	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Pl Intensity Ratio	relative intensity of red spectrum vs blue spectrum	18.7	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Raman Peak	regex-detected Raman peak	470cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	580cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	550cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	500cm⁻¹	GaAs₁-xNx	—	—	—
Ir Band Position	IR band	470cm⁻¹	GaAs₁-xNx	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Alloy Nitrogen Fraction	x	0.036	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Alloy Nitrogen Fraction	x	0.031	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.031.		—
Alloy Nitrogen Fraction	x	0.034	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.034.		—
Alloy Nitrogen Fraction	x	0.035	GaAs₁-xNx	GaAs₁-xNx epilayer region with x = 0.035.		—
Alloy Nitrogen Fraction	x	0.022	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Spin Dependent Recombination Ratio	SDR ratio	1.5	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Spin Dependent Recombination Ratio	SDR ratio	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	minimum reported power for maximum SDR	0.6mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Excitation Power For Max Sdr	maximum reported power for maximum SDR	15mW	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Pl Intensity Change	linearly-polarized to circularly-polarized pump intensity increase factor	5	GaAs₁-xNx	GaAs₁-xNx epilayer region with lowest nitrogen content among		—
Pl Intensity Ratio	relative intensity of red spectrum vs blue spectrum	18.7	GaAs₁-xNx	GaAs₁-xNx epilayer region with highest nitrogen content amon		—
Raman Peak	regex-detected Raman peak	470cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	580cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	550cm⁻¹	GaAs₁-xNx	—	—	—
Raman Peak	regex-detected Raman peak	500cm⁻¹	GaAs₁-xNx	—	—	—
Ir Band Position	IR band	470cm⁻¹	GaAs₁-xNx	—	—	—