Research paperExperimental GrowthExperimental CharacterizationFormation of Mn-rich interfacial phases in Co₂FexMn₁-xSi thin filmsKa Ming Law, Arashdeep S. Thind, Mihir Pendharkar, Sahil J. Patel et al.2023·10.1016/j.jmmm.2024.171884·arXiv:2312.15562AbstractWe report the formation of Mn-rich regions at the interface of Co₂FexMn₁-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region is 1-2 nm wide, occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 film. Element-specific XMCD measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the compositional range. SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition.Read more
Co₂FexMn₁-xSi thin film with intended Fe content x = 0 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.3 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.7 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationFormation of Mn-rich interfacial phases in Co₂FexMn₁-xSi thin filmsKa Ming Law, Arashdeep S. Thind, Mihir Pendharkar, Sahil J. Patel et al.2023·10.1016/j.jmmm.2024.171884·arXiv:2312.15562AbstractWe report the formation of Mn-rich regions at the interface of Co₂FexMn₁-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region is 1-2 nm wide, occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 film. Element-specific XMCD measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the compositional range. SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition.Read more
Co₂FexMn₁-xSi thin film with intended Fe content x = 0 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.3 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.7 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationFormation of Mn-rich interfacial phases in Co₂FexMn₁-xSi thin filmsKa Ming Law, Arashdeep S. Thind, Mihir Pendharkar, Sahil J. Patel et al.2023·10.1016/j.jmmm.2024.171884·arXiv:2312.15562AbstractWe report the formation of Mn-rich regions at the interface of Co₂FexMn₁-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region is 1-2 nm wide, occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 film. Element-specific XMCD measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the compositional range. SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition.Read more
Co₂FexMn₁-xSi thin film with intended Fe content x = 0 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.3 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.7 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationFormation of Mn-rich interfacial phases in Co₂FexMn₁-xSi thin filmsKa Ming Law, Arashdeep S. Thind, Mihir Pendharkar, Sahil J. Patel et al.2023·10.1016/j.jmmm.2024.171884·arXiv:2312.15562AbstractWe report the formation of Mn-rich regions at the interface of Co₂FexMn₁-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region is 1-2 nm wide, occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 film. Element-specific XMCD measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the compositional range. SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition.Read more
Co₂FexMn₁-xSi thin film with intended Fe content x = 0 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.3 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand
Co₂FexMn₁-xSi thin film with intended Fe content x = 0.7 grown on GaAs (001).2 preparations3 characterizations3 properties3 figuresExperimentalCo₂FexMn₁-xSiStudied MaterialExpand