Research paperExperimental GrowthExperimental CharacterizationMoiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxyMaciej Wojcik, Sania Dad, Piotr Dziawa, Slawomir Kret et al.2025·arXiv:2605.06603AbstractWe investigate core/shell GaAs/(Pb,Sn)Te nanowire nano-heterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE systems dedicated to III-V, and IV-VI semiconductors. The interface structure of wz-GaAs/(Pb,Sn)Te nanowires is investigated using high resolution transmission electron microscopy, scanning transmission electron microscopy and geometric phase analysis. Misfit dislocations and moiré fringes are observed as a direct result of the lattice mismatch between the core and the shell materials, and used to estimate strain in crystalline topological insulator shells. Our results point to a possibility of using moiré patterns analysis as an alternative, for estimating strain in the core-shell nanowire structures.Read more
GaAs/(Pb0.47Sn0.53Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.47Sn0.53Te shell.4 preparations3 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialPb0.47Sn0.53TeStudied MaterialExpand
GaAs/(Pb0.37Sn0.63Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.37Sn0.63Te shell.4 preparations3 characterizations3 properties5 figuresExperimentalGaAsStudied MaterialPb0.37Sn0.63TeStudied MaterialExpand
GaAs/PbTe core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt PbTe shell.4 preparations1 characterization3 properties2 figuresExperimentalGaAsStudied MaterialPbTeStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationMoiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxyMaciej Wojcik, Sania Dad, Piotr Dziawa, Slawomir Kret et al.2025·arXiv:2605.06603AbstractWe investigate core/shell GaAs/(Pb,Sn)Te nanowire nano-heterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE systems dedicated to III-V, and IV-VI semiconductors. The interface structure of wz-GaAs/(Pb,Sn)Te nanowires is investigated using high resolution transmission electron microscopy, scanning transmission electron microscopy and geometric phase analysis. Misfit dislocations and moiré fringes are observed as a direct result of the lattice mismatch between the core and the shell materials, and used to estimate strain in crystalline topological insulator shells. Our results point to a possibility of using moiré patterns analysis as an alternative, for estimating strain in the core-shell nanowire structures.Read more
GaAs/(Pb0.47Sn0.53Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.47Sn0.53Te shell.4 preparations3 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialPb0.47Sn0.53TeStudied MaterialExpand
GaAs/(Pb0.37Sn0.63Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.37Sn0.63Te shell.4 preparations3 characterizations3 properties5 figuresExperimentalGaAsStudied MaterialPb0.37Sn0.63TeStudied MaterialExpand
GaAs/PbTe core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt PbTe shell.4 preparations1 characterization3 properties2 figuresExperimentalGaAsStudied MaterialPbTeStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationMoiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxyMaciej Wojcik, Sania Dad, Piotr Dziawa, Slawomir Kret et al.2025·arXiv:2605.06603AbstractWe investigate core/shell GaAs/(Pb,Sn)Te nanowire nano-heterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE systems dedicated to III-V, and IV-VI semiconductors. The interface structure of wz-GaAs/(Pb,Sn)Te nanowires is investigated using high resolution transmission electron microscopy, scanning transmission electron microscopy and geometric phase analysis. Misfit dislocations and moiré fringes are observed as a direct result of the lattice mismatch between the core and the shell materials, and used to estimate strain in crystalline topological insulator shells. Our results point to a possibility of using moiré patterns analysis as an alternative, for estimating strain in the core-shell nanowire structures.Read more
GaAs/(Pb0.47Sn0.53Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.47Sn0.53Te shell.4 preparations3 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialPb0.47Sn0.53TeStudied MaterialExpand
GaAs/(Pb0.37Sn0.63Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.37Sn0.63Te shell.4 preparations3 characterizations3 properties5 figuresExperimentalGaAsStudied MaterialPb0.37Sn0.63TeStudied MaterialExpand
GaAs/PbTe core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt PbTe shell.4 preparations1 characterization3 properties2 figuresExperimentalGaAsStudied MaterialPbTeStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationMoiré based strain analysis in wurtzite GaAs – rock-salt (Pb,Sn)Te core/shell nanowires grown by molecular beam epitaxyMaciej Wojcik, Sania Dad, Piotr Dziawa, Slawomir Kret et al.2025·arXiv:2605.06603AbstractWe investigate core/shell GaAs/(Pb,Sn)Te nanowire nano-heterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE systems dedicated to III-V, and IV-VI semiconductors. The interface structure of wz-GaAs/(Pb,Sn)Te nanowires is investigated using high resolution transmission electron microscopy, scanning transmission electron microscopy and geometric phase analysis. Misfit dislocations and moiré fringes are observed as a direct result of the lattice mismatch between the core and the shell materials, and used to estimate strain in crystalline topological insulator shells. Our results point to a possibility of using moiré patterns analysis as an alternative, for estimating strain in the core-shell nanowire structures.Read more
GaAs/(Pb0.47Sn0.53Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.47Sn0.53Te shell.4 preparations3 characterizations7 properties5 figuresExperimentalGaAsStudied MaterialPb0.47Sn0.53TeStudied MaterialExpand
GaAs/(Pb0.37Sn0.63Te) core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt Pb0.37Sn0.63Te shell.4 preparations3 characterizations3 properties5 figuresExperimentalGaAsStudied MaterialPb0.37Sn0.63TeStudied MaterialExpand
GaAs/PbTe core/shell nanowire heterostructure with wurtzite GaAs core and rock-salt PbTe shell.4 preparations1 characterization3 properties2 figuresExperimentalGaAsStudied MaterialPbTeStudied MaterialExpand