Research paperExperimental GrowthExperimental CharacterizationAdsorption-Controlled Epitaxy and Twin Control of γ-GaSe on GaAs (111)BJoshua Eickhoff, Wendy L. Sarney, Sina Najmaei, Daniel A. Rhodes et al.arXiv·2026·arXiv:2603.06845AbstractWe experimentally map the adsorption-controlled growth window of GaSe films on vicinal GaAs (111)B substrates by molecular beam epitaxy. The phase boundaries qualitatively agree with Ellingham-diagram predictions. All films crystallize in the γ (R3m) polytype. Increasing growth and annealing temperature decreases mosaicity and surface roughness, but at the expense of a transition from singly oriented γ to twinned γ with 60° rotated domains.Read more
MBE-grown GaSe film on vicinal GaAs (111)B substrate, representative as-grown film within the adsorption-controlled window.2 preparations4 characterizations4 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
GaSe film grown at 400 °C and subsequently annealed to 520 °C under combined Ga and Se flux.5 preparations4 characterizations5 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationAdsorption-Controlled Epitaxy and Twin Control of γ-GaSe on GaAs (111)BJoshua Eickhoff, Wendy L. Sarney, Sina Najmaei, Daniel A. Rhodes et al.arXiv·2026·arXiv:2603.06845AbstractWe experimentally map the adsorption-controlled growth window of GaSe films on vicinal GaAs (111)B substrates by molecular beam epitaxy. The phase boundaries qualitatively agree with Ellingham-diagram predictions. All films crystallize in the γ (R3m) polytype. Increasing growth and annealing temperature decreases mosaicity and surface roughness, but at the expense of a transition from singly oriented γ to twinned γ with 60° rotated domains.Read more
MBE-grown GaSe film on vicinal GaAs (111)B substrate, representative as-grown film within the adsorption-controlled window.2 preparations4 characterizations4 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
GaSe film grown at 400 °C and subsequently annealed to 520 °C under combined Ga and Se flux.5 preparations4 characterizations5 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationAdsorption-Controlled Epitaxy and Twin Control of γ-GaSe on GaAs (111)BJoshua Eickhoff, Wendy L. Sarney, Sina Najmaei, Daniel A. Rhodes et al.arXiv·2026·arXiv:2603.06845AbstractWe experimentally map the adsorption-controlled growth window of GaSe films on vicinal GaAs (111)B substrates by molecular beam epitaxy. The phase boundaries qualitatively agree with Ellingham-diagram predictions. All films crystallize in the γ (R3m) polytype. Increasing growth and annealing temperature decreases mosaicity and surface roughness, but at the expense of a transition from singly oriented γ to twinned γ with 60° rotated domains.Read more
MBE-grown GaSe film on vicinal GaAs (111)B substrate, representative as-grown film within the adsorption-controlled window.2 preparations4 characterizations4 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
GaSe film grown at 400 °C and subsequently annealed to 520 °C under combined Ga and Se flux.5 preparations4 characterizations5 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationAdsorption-Controlled Epitaxy and Twin Control of γ-GaSe on GaAs (111)BJoshua Eickhoff, Wendy L. Sarney, Sina Najmaei, Daniel A. Rhodes et al.arXiv·2026·arXiv:2603.06845AbstractWe experimentally map the adsorption-controlled growth window of GaSe films on vicinal GaAs (111)B substrates by molecular beam epitaxy. The phase boundaries qualitatively agree with Ellingham-diagram predictions. All films crystallize in the γ (R3m) polytype. Increasing growth and annealing temperature decreases mosaicity and surface roughness, but at the expense of a transition from singly oriented γ to twinned γ with 60° rotated domains.Read more
MBE-grown GaSe film on vicinal GaAs (111)B substrate, representative as-grown film within the adsorption-controlled window.2 preparations4 characterizations4 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand
GaSe film grown at 400 °C and subsequently annealed to 520 °C under combined Ga and Se flux.5 preparations4 characterizations5 properties4 figuresExperimentalGaSeStudied MaterialGaAsSubstrate / DielectricExpand